CPC3960 600V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 600V RDS(on) (max) 44 IDSS (min) Package 100mA SOT-223 Features • • • • • High Breakdown Voltage: 600V On-Resistance: 44 max. at 25ºC Low VGS(off) Voltage: -1.4 to -3.1V High Input Impedance Small Package Size: SOT-223 Applications • • • • • • Description The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown, which makes the CPC3960 ideal for use in high-power applications. The CPC3960 is a highly reliable FET device that has been used extensively in IXYS Integrated Circuits Division’s Solid State Relays for industrial and telecommunications applications. Current Regulator Normally-On Switches Solid State Relays Converters Telecommunications Power Supply The CPC3960 is available in the SOT-223 package. Ordering Information Part # CPC3960ZTR Description SOT-223: Tape and Reel (1000/Reel) Circuit Symbol Package Pinout D DS-CPC3960-R02 D 1 4 2 3 G D S G S www.ixysic.com 1 INTEGRATED CIRCUITS DIVISION CPC3960 Absolute Maximum Ratings @ 25ºC Parameter Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Total Package Dissipation 1 Operational Temperature Junction Temperature, Maximum Storage Temperature 1 Ratings 600 ±15 150 1.8 -55 to +125 +125 -55 to +125 Units V V mA W ºC ºC ºC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Mounted on 1"x1" 2 oz. Copper FR4 board. Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Source-Drain Diode Voltage Drop Thermal Resistance Junction to Ambient Junction to Case 2 Symbol BVDSX VGS(off) dVGS(off) /dT IGSS ID(off) IDSS RDS(on) dRDS(on) /dT Gfs CISS COSS CRSS Conditions VGS= -5.5V, ID=100µA VDS= 15V, ID=1A VDS= 15V, ID=1A VGS=±15V, VDS=0V VGS= -5.5V, VDS=600V VGS= 0V, VDS=15V VGS= 0V, ID=100mA, VDS=10V ID= 50mA, VDS = 10V VGS= -3.5V Min 600 -1.4 100 100 Typ 100 6.8 4.2 Max -3.1 4.5 100 1 44 2.5 - Units V V mV/ºC nA µA mA %/ºC m - pF Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS(off) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current Saturated Drain-to-Source Current Static Drain-to-Source On-State Resistance Change in RDS(on) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance VDS= 25V - VSD f= 1MHz VGS= -5V, ISD=150mA - 0.72 1 V JA JC - - 55 23 - ºC/W www.ixysic.com R02 INTEGRATED CIRCUITS DIVISION CPC3960 PERFORMANCE DATA @ 25ºC (Unless Otherwise Noted)* Input Admittance (VDS=3V) 0.25 0.0 400 TA=-40ºC TA=25ºC TA=110ºC 300 0.10 Gm (m ) VGS (V) -1.0 : 0.15 Transconductance vs. Drain Current (VDS=3V) TA=-40ºC -0.5 0.20 ID (A) Threshold Voltage (IDS=1PA) -1.5 -2.0 TA=25ºC 200 TA=110ºC 100 -2.5 0.05 0.00 -3.5 -4 -3 -2 VGS (V) -1 0 -50 Forward Safe Operating Bias (VGS=0V, DC Load) 1 -25 0 25 50 75 Temperature (ºC) 125 -100 0.00 ID (mA) 250 50 200 40 150 VGS=0V VGS=-0.5V VGS=-1V VGS=-1.5V VGS=-2V 100 0.01 50 Voltage (V) 3 VDS (V) On-Resistance vs. Drain Current Power Dissipation vs. Ambient Temperature 10 100 0 1000 1 2 4 5 TA=25ºC TA=-40ºC 0.1 0.2 0.3 ID (A) 0.4 0.6 10 -25 0 25 50 75 Temperature (ºC) 100 125 Blocking Voltage vs. Temperature 1.5 1.0 0.5 0 20 40 60 80 100 Temperature (ºC) Leakage Current (VGS=-5V, VDS=600V) 120 200 120 140 780 760 740 720 700 680 -50 -25 0 25 50 75 Temperature (ºC) 100 125 Capacitance vs. Drain-Source Voltage (VDS=-5V) 100 Capacitance (pF) Leakage Current (nA) 0.5 20 800 0.0 0.0 0.20 On-Resistance vs. Temperature (VGS=0V, IDS=50mA) -50 Blocking Voltage (VP) Power Dissipation (W) TA=110ºC 0.15 30 6 2.0 50 45 40 35 30 25 20 15 10 5 0 0.10 ID (A) 0 0 0.001 1 0.05 Output Characteristics 0.1 On Resistance (:) 100 On-Resistance (:) -5 Current (A) 0 -3.0 80 60 40 150 100 CISS CRSS COSS 50 20 0 -50 0 -25 0 25 50 75 Temperature (ºC) 100 125 0 5 10 15 20 25 VDS (V) 30 35 40 *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R02 www.ixysic.com 3 INTEGRATED CIRCUITS DIVISION CPC3960 Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Rating CPC3960Z MSL 1 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Reflow Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Device Maximum Temperature x Time CPC3960Z 260ºC for 30 seconds Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used. 4 www.ixysic.com R02 INTEGRATED CIRCUITS DIVISION CPC3960 Mechanical Dimensions CPC3960Z 2.90 / 3.10 (0.114 / 0.122) PCB Land Pattern 0.229 / 0.330 (0.009 / 0.013) 1.90 (0.075) 6.705 / 7.290 (0.264 / 0.287) 3.30 / 3.71 (0.130 / 0.146) 1.499 / 1.981 (0.059 / 0.078) 3.20 (0.126) 6.10 (0.24) Pin 1 0.610 / 0.787 (0.024 / 0.031) 1.90 (0.075) 0.914 MIN (0.036 MIN) 2.286 (0.090) 6.30 / 6.71 (0.248 / 0.264) 0.020 / 0.102 (0.0008 / 0.004) 0.864 / 1.067 (0.034 / 0.042) 0.90 (0.035) 1.549 / 1.803 (0.061 / 0.071) 2.286 (0.090) Dimensions mm MIN / mm MAX (inches MIN / inches MAX) 4.597 (0.181) CPC3960ZTR Tape & Reel 177.8 Dia (7.00 Dia) 5.50 ± 0.05 (0.217 ± 0.002) Top Cover Tape Thickness 0.102 Max (0.004 Max) 2.00 ± 0.05 (0.079 ± 0.002) 4.00 ± 0.1 (0.157 ± 0.004) W=12.08 ± 0.2 (0.476 ± 0.008) B0=7.42 ± 0.1 (0.292 ± 0.004) K0=1.88 ± 0.1 (0.074 ± 0.004) Embossed Carrier 1.75 ± 0.1 (0.069 ± 0.004) A0=6.83 ± 0.1 (0.269 ± 0.004) P=8.03 ± 0.1 (0.316 ± 0.004) Embossment Dimensions mm (inches) For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 5 Specification: DS-CPC3960-R02 ©Copyright 2015, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 4/10/2015