TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SP1015 Series SP1015 Series 5pF, 20kV Bidirectional TVS Array RoHS Pb GREEN Description The miniature 4 channel bidirectional TVS array provides protection for data lines that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes well above the maximum level specified in the IEC61000-4-2 international standard without performance degradation. The bidirectional configuration provides symmetrical ESD protection for data lines when AC signals are present. Features Functional Block Diagram 1 2 • ESD, IEC61000-4-2, ±20kV contact, ±30kV air • High density TVS Array available today • EFT, IEC61000-4-4,40A (5/50ns) • 4 channels of protection in a 0.93x0.53mm footprint • L ightning protection, IEC61000-4-5, 2.0A (tp=8/20µs) 3 GND • Touch screen and I²C interfaces 4 Pinout Applications • Mobile Phones • eReaders/eBooks • Wearable Technology • Tablets • Smart Phones 1 2 GND 3 4 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/17/15 TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SP1015 Series Absolute Maximum Ratings Symbol Parameter Value Units 2.0 A Operating Temperature -40 to 125 °C Storage Temperature -55 to 150 °C IPP Peak Current (tp=8/20μs) TOP TSTOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Storage Temperature Range Rating Units -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage Reverse Breakdown Voltage Min IR=1mA VBD Leakage Current IR Clamp Voltage1 VC Dynamic Resistance Test Conditions Typ VRWM RDYN 2 ESD Withstand Voltage1 VESD Diode Capacitance CD 1 Max Units 5.0 V 5.5 V VR=3V 0.05 μA VR=5V 0.1 μA IPP=1A, tp=8/20µs, Fwd 11 V IPP=2A, tp=8/20µs, Fwd 12 V TLP, tp=100ns, I/O to GND 0.65 Ω IEC61000-4-2 (Contact Discharge) ±20 kV IEC61000-4-2 (Air Discharge) ±30 kV Reverse Bias=0V (I/O to GND) 5 pF Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. Pulse Waveform Transmission Line Pulse (TLP) 110% 20 100% 18 90% 16 TLP Current (A) Percent of IPP 80% 70% 60% 50% 14 12 10 8 40% 6 30% 4 20% 2 10% 0% 0 0.0 5.0 10.0 15.0 Time (μs) 20.0 25.0 30.0 0 5 10 15 20 25 TLP Voltage (V) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/17/15 TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SP1015 Series Capacitance vs. Reverse Bias Clamping Voltage vs. IPP 10.0 14.0 9.0 12.0 Clamping Voltage(V) 8.0 Capacitance (pF) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 10.0 8.0 6.0 4.0 2.0 0.0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1 5 1.5 2 Peak Pulse Current, I PP (A) Bias Voltage (V) Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 Peak Temperature (TP) tP TP Temperature Reflow Condition tS time to peak temperature Time Part Marking System Top 2 Part Numbering System Pin 1 SP 1015 – 04 W T G Flip vertically (downward) 180º TVS Diode Arrays (SPA® Diodes) G= Green T= Tape & Reel Pin 1 Series Package W: Flipchip Number of Channels Ordering Information Part Number Package Marking Min. Order Qty. Packaging Option P0/P1 SP1015-04WTG 0.93x0.53mm Flip Chip 2 5000 Tape & Reel – 8mm tape/7” reel 2mm/2mm © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/17/15 Packaging Specification EIA RS-481 TVS Diode Arrays (SPA® Diodes) Diodes) General Purpose ESD Protection - SP1015 Series Package Dimensions 0.93x0.53mm Flip Chip Symbol Millimeters Inches Min Typ Max Min Typ Max A 0.294 0.311 0.328 0.0116 0.0122 0.0129 A1 0.009 0.011 0.013 0.0004 0.0004 0.0005 b 0.147 0.150 0.153 0.0058 0.0059 0.0060 D 0.525 0.545 0.565 0.0207 0.0215 0.0222 E 0.925 0.945 0.965 0.0364 0.0372 0.0380 D2 0.447 0.450 0.453 0.0176 0.0177 0.0178 0.300 e 0.0118 0.105 0.585 0.195 0.195 0.105 0.195 0.300 0.795 Unit: mm Recommended Solder Pad Embossed Carrier Tape & Reel Specification P1 P2 D P0 E F W D1 T A0 Symbol Millimeters A0 0.66+/-0.03 B0 1.06+/-0.03 D ø 1.50 + 0.10 D1 ø 0.20 +/- 0.05 E 1.75+/-0.10 F 3.50+/-0.05 K0 0.39+/-0.03 P0 2.00+/-0.05 P1 2.00+/-0.05 P2 4.00+/-0.10 W 8.00 + 0.30 -0.10 T 0.20+/-0.02 K0 B0 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/17/15