TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1009 Series SP1009 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN The SP1009 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present. Pinout Features 1 2 Functional Block Diagram 1 • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • Low capacitance of 30pF (@ VR=0V) • EFT, IEC61000-4-4, 40A (5/50ns) • Low leakage current of 0.1μA at 5V • Lightning, IEC610004-5 2nd edition, 10A (tP=8/20μs) • Space efficient 0201 footprint Applications 2 • Mobile phones • MP3/PMP • Smart phones • Camcorders • Portable navigation devices • PDA • Portable medical • Digital cameras • Point of sale terminals Application Example Keypads Outside World I/O Controller P1 P2 P3 P4 IC SP1009 (x4) GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/28/16 SP1009 Description TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1009 Series Absolute Maximum Ratings Parameter Value Units IPP Symbol Peak Current (tp=8/20μs) 10.0 A TOP Operating Temperature -40 to 85 °C TSTOR Storage Temperature -65 to 150 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Storage Temperature Range Rating Units -65 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage VRWM Test Conditions Min Typ Max Units 6.0 V 8.5 9.5 V 0.5 μA Breakdown Voltage VBR IR=1mA Leakage Current ILEAK VR=5V with 1 pin at GND 0.1 IPP=1A, tp=8/20µs, Fwd 9.3 V IPP=2A, tp=8/20µs, Fwd 10.0 V IPP=10A, tP=8/20μs, Fwd 15.6 V (VC2 - VC1) / (IPP2 - IPP1) 0.7 Ω Clamp Voltage 1 VC Dynamic Resistance RDYN ESD Withstand Voltage1 VESD Diode Capacitance1 7.0 IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV CD Reverse Bias=0V 30 pF Reverse Bias=2.5V 23 pF Note: 1 Parameter is guaranteed by design and/or device characterization. Product Characteristics Lead Plating Sn Lead Material Copper Lead Coplanarity 6 um (max) Substrate material Silicon Body Material Silicon Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/28/16 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1009 Series Capacitance vs. Reverse Bias 8/20μS Pulse Waveform 110% 40.0 100% 35.0 90% 80% 20.0 15.0 10.0 70% SP1009 25.0 Percent of IPP Capacitance (pF) 30.0 60% 50% 40% 30% 20% 5.0 10% 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0% 5.0 0.0 5.0 10.0 Bias Voltage (V) Clamping Voltage vs. IPP 20.0 25.0 30.0 Insertion Loss (S21) I/O to GND 18.0 5 16.0 0 14.0 -5 Attenuation (dB) Clamp Voltage (VC) 15.0 Time (μs) 12.0 10.0 8.0 6.0 -10 -15 -20 -25 4.0 -30 2.0 -35 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1 10.0 10 100 Peak Pulse Current-IPP (A) 1000 10000 Frequency (MHz) Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260 Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/28/16 °C Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 Peak Temperature (TP) +0/-5 tP TP Temperature Reflow Condition tS time to peak temperature Time TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1009 Series Package Dimensions — 0201 Flipchip 0201 Flipchip Symbol E Millimeters Inches Min Max Min Max 0.605 0.655 0.02382 0.02579 0.01398 D 0.305 0.355 0.01201 A2 0.265 0.315 0.01043 0.0124 A1 0.145 0.155 0.00571 0.0061 A 0.273 0.329 0.01075 0.01295 0.4 BSC D2 0.0157 BSC E1 0.245 0.255 0.00965 0.01004 D1 0.006 0.014 0.00024 0.00055 Part Numbering System SP 1009 – 01 W T G Silicon Protection Array (SPATM) Family of TVS Diode Arrays G= Green T= Tape & Reel Series Number of Channels Part Marking System Package W: 0201 Flipchip Ordering Information Part Number Package Marking Min. Order Qty. SP1009-01WTG 0201 Flipchip • 10000 Embossed Carrier Tape & Reel Specification — 0201 Flipchip P1 P2 D P0 E F W D1 T A0 Symbol Millimeters A0 0.41+/-0.03 B0 0.70+/-0.03 D ø 1.50 + 0.10 D1 ø 0.20 +/- 0.05 E 1.75+/-0.10 F 3.50+/-0.05 K0 0.38+/-0.03 P0 2.00+/-0.05 P1 2.00+/-0.05 P2 4.00+/-0.10 W 8.00+0.30/-0.10 T 0.23+/-0.02 K0 B0 © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/28/16