Power Module 1200V 100A IGBT Module MG12100S-BN2MM RoHS ® Features • H igh short circuit capability, self limiting short circuit current • F ast switching and short tail current • IGBT3 CHIP(Trench+Field Stop technology) • V CE(sat) with positive temperature coefficient • Low switching losses Applications Agency Approvals AGENCY • F ree wheeling diodes with fast and soft reverse recovery • H igh frequency switching application AGENCY FILE NUMBER E71639 • Motion/servo control • UPS systems • Medical applications Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature TJ op Test Conditions Operating Temperature Tstg Storage Temperature Visol Insulation Test Voltage CTI Comparative Tracking Index Min Typ -40 -40 AC, t=1min Max Unit 150 °C 125 °C 125 °C 3000 V 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m Weight 160 g Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V 140 A TC=80°C 100 A tp=1ms 200 A 450 W TC=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t TJ=25°C 1200 V TC=25°C 140 A TC=80°C 100 A tp=1ms 200 A TJ =125°C, t=10ms, VR=0V 1850 A2s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12100S-BN2MM 1 76 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA 5.0 5.8 6.5 V Collector - Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25°C 1.7 IC=100A, VGE=15V, TJ=125°C 1.9 IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C VCE=1200V, VGE=0V, TJ=125°C VCE=0V,VGE=±15V, TJ=125°C VCC=600V, IC=100A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=100A RG =3.9Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current VGE=±15V Inductive Load -400 V 1 mA 5 mA 400 nA 7.5 Ω 0.9 μC 7.1 nF 0.3 nF TJ =25°C 260 ns TJ =125°C 290 ns TJ =25°C 30 ns TJ =125°C 50 ns TJ =25°C 420 ns TJ =125°C 520 ns TJ =25°C 70 ns TJ =125°C 90 ns TJ =25°C 7.8 mJ TJ =125°C 10 mJ TJ =25°C 8 mJ TJ =125°C 10 mJ 400 A tpsc≤10μS , VGE=15V TJ=125°C,VCC=900V Junction-to-Case Thermal Resistance (Per IGBT) RthJC V 0.28 K/W Diode VF Forward Voltage IF=100A , VGE=0V, TJ =25°C 1.65 V IF=100A , VGE=0V, TJ =125°C 1.65 V IF=100A , VR=600V diF/dt=-2500A/μs TJ =125°C 140 A IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy RthJCD Junction-to-Case Thermal Resistance (Per Diode) MG12100S-BN2MM 20.0 μC 9 mJ 0.5 2 77 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output characteristics 200 200 VGE =15V 160 TJ =25°C 120 IC (A) IC (A) 160 80 120 40 0 0 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: Typical Transfer characteristics 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor 30 200 VCE =20V 80 Eon Eoff (mJ) TJ =25°C 120 VCE=600V IC=100A VGE=±15V TJ =125°C 25 160 IC (A) TJ =125°C 80 TJ =125°C 40 TJ =125°C 40 Eon 20 15 10 Eoff 5 0 5 6 7 9 8 VGE˄V˅ 10 11 0 12 Figure 5: Switching Energy vs. Collector Current 30 25 8 12 16 20 24 28 32 36 RG˄Ω˅ 200 Eon 150 15 Eoff 10 100 RG=3.9Ω VGE=±15V TJ =125°C 50 5 MG12100S-BN2MM 4 250 VCE=600V RG=3.9Ω VGE=±15V TJ =125°C 20 0 0 0 Figure 6: Reverse Biased Safe Operating Area IC (A) Eon Eoff (mJ) VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V 50 100 IC˄A˅ 150 0 200 3 78 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 7: Diode Forward Characteristics Figure 8: Switching Energy vs. Gate Resistor 200 12.0 IF=100A VCE=600V TJ =125°C 10.0 Erec (mJ) 160 120 80 8.0 6.0 4.0 TJ =125°C 40 2.0 TJ =25°C 0 0 0.6 1.2 VF˄V˅ 1.8 0 2.4 Figure 9: Switching Energy vs. Forward Current 4 8 12 16 20 24 RG˄Ω˅ 28 32 36 Figure 10: Transient Thermal Impedance 14.0 12.0 0 1 RG=3.9Ω VCE=600V TJ =125°C Diode ZthJC (K/W) Erec (mJ) 10.0 8.0 6.0 IGBT 0.1 4.0 2.0 0 0 MG12100S-BN2MM 50 100 IF (A) 150 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 200 4 79 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Dimensions-Package S Circuit Diagram Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12100S-BN2MM MG12100S-BN2MM 160g Bulk Pack 100 Part Marking System Part Numbering System MG12100S-BN2MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V WAFER TYPE CURRENT RATING PACKAGE TYPE 100: 100A MG12100S-BN2MM MG12100S-BN2MM CIRCUIT TYPE B: 2x(IGBT+FWD) LOT NUMBER Space reserved for QR code S: Package S 5 80 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15