Power Module 1200V 15A IGBT Module MG1215H-XBN2MM RoHS Features • High level of integration—only one power semiconductor module required for the whole drive • Low saturation voltage and positive temperature coefficient • Fast switching and short tail current • F ree wheeling diodes with fast and soft reverse recovery • Industry standard package with insulated copper base plateand soldering pins for PCB mounting • Temperature sense included Applications • AC motor control • M otion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature TJ op Operating Temperature Tstg Storage Temperature Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque Test Conditions Min Typ -40 -40 AC, t=1min Max Unit 150 °C 125 °C 125 °C 3000 V 250 Recommended (M5) Weight 2.5 5 N·m 180 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V 25 A TC=80°C 15 A tp=1ms 30 A 105 W TC=25°C Diode VRRM Repetitive Reverse Voltage TJ=25°C 1200 V IF(AV) Average Forward Current TC=25°C 15 A IFRM Repetitive Peak Forward Current tp=1ms 30 A TJ =125°C, t=10ms, VR=0V 60 A 2s It 2 MG1215H-XBN2MM 1 199 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15 Power Module 1200V 15A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=0.6mA 5.0 Collector - Emitter IC=15A, VGE=15V, TJ=25°C 5.8 6.5 V 1.7 2.15 Saturation Voltage IC=15A, VGE=15V, TJ=125°C 1.9 V VCE=1200V, VGE=0V, TJ=25°C 0.1 mA VCE=1200V, VGE=0V, TJ=125°C 1 mA 400 nA IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=15A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=15A RG =75Ω tf Fall Time Eon Turn - on Energy VGE=±15V Inductive Load Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 V 0 Ω 0.15 μC 1.1 nF 0.04 nF TJ=25°C 90 ns TJ=125°C 90 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 1.5 mJ TJ=125°C 2.1 mJ TJ=25°C 1.1 mJ TJ=125°C 1.3 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 60 Junction-to-Case Thermal Resistance (Per IGBT) A 1.2 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD MG1215H-XBN2MM IF=15A, VGE=0V, TJ =25°C 1.65 IF=15A, VGE=0V, TJ =125°C 1.65 V IF=15A, VR=600V diF/dt=-400A/µs TJ=125°C 150 ns Junction-to-Case Thermal Resistance (Per Diode) 2 200 2.15 V 16 A 1.1 mJ 1.5 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15 Power Module 1200V 15A IGBT Module Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VRRM Repetitive Reverse Voltage TJ=25°C 1600 V IF(RMS) R.M.S. Forward Current Per Diode TC=80°C 50 A Non-Repetitive Surge Forward Current TJ =45°C, t=10ms, 50Hz 320 A TJ =45°C, t=8.3ms, 60Hz 360 A TJ =45°C, t=10ms, 50Hz 512 A 2s TJ =45°C, t=8.3ms, 60Hz 537 A 2s IFSM I2t Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters VF Forward Voltage IR Reverse Leakage Current RthJCD Test Conditions Min Typ Max Unit IF=15A, VGE=0V, TJ =25°C 1.0 V IF=15A, VGE=0V, TJ =125°C 0.9 V VR=1600V, TJ=25°C 50 μA VR=1600V, TJ=125°C 1 mA 1.05 K/W Junction-to-Case Thermal Resistance (Per Diode) Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V TC=25°C 25 A TC=80°C 15 A tp=1ms 30 A 105 W Diode VRRM Repetitive Reverse Voltage TJ=25°C 1200 V IF(AV) Average Forward Current TC=25°C 15 A IFRM Repetitive Peak Forward Current I2t MG1215H-XBN2MM tp=1ms 30 A TJ =125°C, t=10ms, VR=0V 60 A 2s 3 201 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15 Power Module 1200V 15A IGBT Module Brake-Chopper Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=0.6mA 5.0 Collector - Emitter IC=15A, VGE=15V, TJ=25°C 5.8 6.5 V 1.7 2.15 Saturation Voltage IC=15A, VGE=15V, TJ=125°C 1.9 V VCE=1200V, VGE=0V, TJ=25°C 50 μA VCE=1200V, VGE=0V, TJ=125°C 1 mA 400 nA IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=15A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=15A RG =75Ω tf Fall Time Eon Turn - on Energy VGE=±15V Inductive Load Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 V 0 Ω 0.15 μC 1.1 nF 0.04 nF TJ=25°C 90 ns TJ=125°C 90 ns TJ=25°C 30 ns TJ=125°C 50 ns TJ=25°C 420 ns TJ=125°C 520 ns TJ=25°C 70 ns TJ=125°C 90 ns TJ=25°C 1.5 mJ TJ=125°C 2.1 mJ TJ=25°C 1.1 mJ TJ=125°C 1.3 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 60 Junction-to-Case Thermal Resistance (Per IGBT) A 1.2 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=15A, VGE=0V, TJ =25°C 1.65 IF=15A, VGE=0V, TJ =125°C 1.65 2.15 V V IF=15A, VR=600V diF/dt=-400A/µs TJ=125°C 150 ns 16 A 1.1 mJ Junction-to-Case Thermal Resistance (Per Diode) 1.5 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG1215H-XBN2MM 4 202 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15 Power Module 1200V 15A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 30 50 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 40 Tj =25°C 18 IC (A) IC (A) 24 12 TJ =125°C 20 Tj =125°C 6 0 0 30 10 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T ypical Transfer Characteristics for IGBT Inverter 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 3 30 VCE =20V 24 Eon Eoff (mJ) IC (A) Tj =25°C 18 Tj =125°C 12 VCE=600V IC=15A VGE=±15V Tj =125°C Eon 2 Eoff 1 6 0 5 6 7 9 8 VGE˄V˅ 10 11 0 40 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 7 VCE=600V RG=75Ω VGE=±15V Tj =125°C 18 12 RG=75Ω VGE=±15V Tj =125°C 2 6 Eoff MG1215H-XBN2MM 140 24 Eon 5 120 30 4 0 0 80 100 RG˄Ω˅ Figure 6: R everse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) 6 60 10 20 15 IC˄A˅ 25 0 30 5 203 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15 Power Module 1200V 15A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: S witching Energy vs. Gate Resistort for Diode Inverter 30 2.0 25 1.6 Erec (mJ) IF (A) 20 15 1.2 0.8 Tj =125°C 10 0.4 5 0 IF=15A VCE=600V Tj =125°C Tj =25°C 0 1.0 0.5 2.0 1.5 VF˄V˅ 2.5 0 40 3.0 1.6 80 100 140 Figure 10: Transient Thermal Impedance of Diode and IGBT-inverter 5 RG=75Ω VCE=600V Tj =125°C Diode 1 IGBT ZthJC (K/W) Erec (mJ) 120 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current Diode-inverter 2.0 60 1.2 0.8 0.1 0.4 0 0 5 10 15 IF (A) 20 25 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 30 Figure 11: Diode Forward Characteristics Diode- rectifier Figure 12: Typical Output Characteristics IGBT- brake chopper 80 30 70 VGE =15V 24 60 Tj =25°C 40 IC (A) IF (A) 50 TVj =125°C 30 12 20 TVj =25°C 0 MG1215H-XBN2MM 0.4 1.2 0.8 VF˄V˅ 1.6 Tj =125°C 6 10 0 18 0 0 2.0 6 204 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 3.5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15 Power Module 1200V 15A IGBT Module Figure 14: N TC Characteristics Figure 13: Diode Forward Characteristics Diode - brake chopper 30 100000 25 Tj =25°C IF (A) 20 10000 Tj =125°C 15 R 10 1000 5 0 0 0.5 1.0 1.5 2.0 VF˄V˅ 2.5 100 0 3.0 20 40 80 100 120 140 160 60 TC˄°C˅ Circuit Diagram Dimensions-Package H The foot pins are in gold / nickel coating MG1215H-XBN2MM 7 205 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15 Power Module 1200V 15A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1215H-XBN2MM MG1215H-XBN2MM 180g Bulk Pack 40 Part Marking System Part Numbering System MG12 15 H - XB N2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING ASSEMBLY SITE MG1215H-XBN2MM WAFER TYPE CIRCUIT TYPE LOT NUMBER Space reserved for QR code PACKAGE TYPE 15: 15A MG1215H-XBN2MM 8 206 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/15/15