Power Module 1200V 25A IGBT Module MG1225H-XN2MM

Power Module
1200V 25A IGBT Module
MG1225H-XN2MM
RoHS
Features
• High level of integration
CHIP(Trench+Field
• IGBT
Stop technology)
3
• Low
saturation voltage
and positive temperature
coefficient
• F
ast switching and short
tail current
• F
ree wheeling diodes
with fast and soft reverse
recovery
• Solderable pins for PCB
mounting
• Temperature sense
included
Applications
• AC motor control
• Motion/servo control
• Inverter and power
supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
TJ max
Max. Junction Temperature
Test Conditions
Min
Typ
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Md
Mounting Torque
AC, t=1min
3000
V
250
Recommended (M5)
Weight
2.5
5
N·m
180
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
VCES
Collector - Emitter Voltage
TJ=25°C
1200
V
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
TC=25°C
40
A
TC=80°C
25
A
tp=1ms
50
A
147
W
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
It
2
MG1225H-XN2MM
TJ=25°C
1200
V
TC=25°C
35
A
TC=80°C
25
A
tp=1ms
50
A
TJ =125°C, t=10ms, VR=0V
200
A 2s
1
181
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 25A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=1mA
5.0
5.8
6.5
V
Collector - Emitter
IC=25A, VGE=15V, TJ=25°C
1.7
V
Saturation Voltage
IC=25A, VGE=15V, TJ=125°C
1.9
V
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=1200V, VGE=0V, TJ=25°C
0.1
mA
VCE=1200V, VGE=0V, TJ=125°C
1
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=25A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V
IC=25A
RG =36Ω
tf
Fall Time
Eon
Turn - on Energy
VGE=±15V
Inductive Load
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
8.0
Ω
0.24
μC
1.81
nF
0.08
nF
TJ=25°C
90
ns
TJ=125°C
90
ns
TJ=25°C
30
ns
TJ=125°C
50
ns
TJ=25°C
420
ns
TJ=125°C
520
ns
TJ=25°C
70
ns
TJ=125°C
90
ns
TJ=25°C
2.4
mJ
TJ=125°C
3.5
mJ
TJ=25°C
1.8
mJ
TJ=125°C
2.1
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
100
Junction-to-Case Thermal Resistance (Per IGBT)
A
0.85
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
IF=25A, VGE=0V, TJ =25°C
1.55
V
IF=25A, VGE=0V, TJ =125°C
1.54
V
IF=25A, VR=600V
diF/dt=-400A/µs
TJ=125°C
200
ns
20
A
1.5
mJ
Junction-to-Case Thermal Resistance (Per Diode)
1.4
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG1225H-XN2MM
2
182
Min
Typ
5
KΩ
3375
K
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 25A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
Figure 2: Typical Output Characteristics
for IGBT Inverter
50
50
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
40
Tj =25°C
30
IC (A)
IC (A)
40
20
TJ =125°C
20
Tj =125°C
10
0
0
30
10
0.5
1.0
1.5 2.0
VCE˄V˅
2.5
3.0
0
3.5
Figure 3: T
ypical Transfer Characteristics
for IGBT Inverter
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
50
5
VCE=600V
IC=25A
VGE=±15V
Tj =125°C
VCE =20V
40
4
Eon Eoff (mJ)
IC (A)
Tj =25°C
30
Tj =125°C
20
5
6
7
9
8
VGE˄V˅
10
11
10
8
Eoff
VCE=600V
RG=36Ω
VGE=±15V
Tj =125°C
20
30
40
RG˄Ω˅
50
60
70
40
Eon
Eoff
4
30
20
RG=36Ω
VGE=±15V
Tj =125°C
10
2
10
10
50
6
0
0
0
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
IC (A)
Eon Eoff (mJ)
2
0
12
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
MG1225H-XN2MM
3
1
10
0
Eon
20
30
IC˄A˅
40
0
50
3
183
0
200
400
600 800 1000 1200 1400
VCE˄V˅
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 25A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
3.0
50
IF=25A
VCE=600V
Tj =125°C
2.5
Erec (mJ)
40
IF (A)
30
20
0.5
Tj =25°C
0
0
1.0
0.5
2.0
1.5
VF˄V˅
2.5
3.0
3.0
2.5
0
10
20
30
40
50
60
70
RG˄Ω˅
Figure 9: Switching Energy vs. Forward Current
Diode-inverter
Figure 10: Transient Thermal Impedance of
Diode and IGBT-inverter
10
RG=36Ω
VCE=600V
Tj =125°C
Diode
1
2.0
Erec (mJ)
1.5
1.0
Tj =125°C
10
0
2.0
IGBT
1.5
1.0
0.1
TJ =150°C
TC =25°C
VGE =15V
tscİ10µs
0.5
0
0
10
20
30
40
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
50
IF (A)
Figure 11: NTC Characteristics
100000
10000
R
1000
100
0
MG1225H-XN2MM
20
40
80 100 120 140 160
60
TC˄°C˅
4
184
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 25A IGBT Module
Circuit Diagram
Dimensions-Package H
The foot pins are in gold / nickel coating
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG1225H-XN2MM
MG1225H-XN2MM
180g
Bulk Pack
40
Part Marking System
Part Numbering System
MG12 25 H - X N2 MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CURRENT RATING
ASSEMBLY SITE
WAFER TYPE
MG1225H-XN2MM
CIRCUIT TYPE
LOT NUMBER
Space
reserved
for QR
code
PACKAGE TYPE
25: 25A
MG1225H-XN2MM
5
185
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14