Datasheet

Power Module
1200V 100A IGBT Module
MG12100D-BA1MM
RoHS ®
Features
• Ultra low loss
• P
ositive temperature
coefficient
• High ruggedness
• W
ith fast free-wheeling
diodes
• H
igh short circuit
capability
Applications
• SMPS and UPS
• Converter
• Induction heating
• Welder
Agency Approvals
AGENCY
• Inverter
AGENCY FILE NUMBER
E71639
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Max
Unit
Junction-to-Case Thermal
Resistance
Per IGBT
0.15
K/W
Per Inverse Diode
0.30
K/W
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M5)
2.5
5
N·m
RthJC
RthJCD
Weight
Min
Typ
285
g
Values
Unit
V
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
IGBT
VCES
Collector - Emitter Voltage
1200
VGES
Gate - Emitter Voltage
±20
V
160
A
A
IC
TC=25°C
DC Collector Current
ICpuls
Pulsed Collector Current
TC=80°C
100
TC=25°C, tp=1ms
340
TC=80°C, tp=1ms
220
A
Ptot
Power Dissipation Per IGBT
1000
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
AC, t=1min
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
V
180
A
TC=80°C
120
A
180
A
TJ =45°C, t=10ms, Sine
860
TJ =45°C, t=8.3ms, Sine
900
Average Forward Current
RMS Forward Current
IF(RMS)
IFSM
1200
TC=25°C
Non-Repetitive Surge Forward
Current
A
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG12100D-BA1MM
63
1
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 100A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=4mA
5.0
6.2
7.0
V
Collector - Emitter
Saturation Voltage
IC=100A, VGE=15V, TJ=25°C
1.8
IC=100A, VGE=15V, TJ=125°C
2.0
IGBT
VGE(th)
VCE(sat)
VCE=1200V, VGE=0V, TJ=25°C
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V,VGE=±20V
Qge
Gate Charge
VCC=600V, IC=100A , VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Rise Time
td(off)
Turn - off Delay Time
Fall Time
Eon
Turn - on Energy
Eoff
4
-400
mA
mA
400
1200
nA
nC
8.58
VCE=25V, VGE=0V, f =1MHz
0.6
nF
0.4
VCC=600V
IC=100A
RG =9Ω
tf
V
1
VCE=1200V, VGE=0V, TJ=125°C
Turn - on Delay Time
tr
V
VGE=±15V
Inductive Load
Turn - off Energy
TJ =25°C
270
ns
TJ =125°C
290
ns
TJ =25°C
60
ns
TJ =125°C
60
ns
TJ =25°C
480
ns
TJ =125°C
550
ns
TJ =25°C
60
ns
TJ =125°C
65
ns
TJ =25°C
12
mJ
TJ =125°C
16.8
mJ
TJ =25°C
7.4
mJ
TJ =125°C
11.6
mJ
Diode
VF
Forward Voltage
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
MG12100D-BA1MM
IF=100A , VGE=0V, TJ =25°C
1.9
2.3
V
IF=100A , VGE=0V, TJ =125°C
1.7
2.1
V
IF=100A , VR=800V
diF/dt=-1000A/μs
TJ =125°C
230
2
64
ns
80
A
9.7
μC
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 100A IGBT Module
Figure 1: Typical Output Characteristics
Figure 2: T
ypical Transfer characteristics
200
200
160
160
VCE=20V
120
IC (A)
IC (A)
TJ =25°C
TJ =125°C
80
120
80
TJ =125°C
40
40
0
0
TJ =25°C
0.5
1
1.5
2.5
2
VCE(sat)˄V˅
3
3.5
0
Figure 3: Switching Energy vs. Collector Current
4
6
8
VGE˄V˅
10
12
14
Figure 4: Switching Energy vs. Gate Resistor
36
120
VCC=600V
RG=18ohm
VGE=±15V
TJ =125°C
80
24
60
Eon
40
20
50
100
150 200
IC˄A˅
250 300
Eon
18
12
Eoff
6
Eoff
0
0
VCC=600V
IC=50A
VGE=±15V
TJ =125°C
30
Eon Eoff (mJ)
100
Eon Eoff (mJ)
2
0
0
350
Figure 5: Switching Times vs. Collector Current
0
5
10
15
20
25
RG˄ohm˅
30
35
Figure 6: S
witching Times vs. Gate Resistor
3
10
3
10
td(off)
td(off)
102
td(on)
t (ns)
t (ns)
td(on)
tf
102
tf
tr
tr
10
0
MG12100D-BA1MM
VCC=600V
RG=9ohm
VGE=±15V
TJ =125°C
40
80
120 160 200
I ˄A˅
240
10
280
65
3
VCC=600V
IC=100A
VGE=±15V
TJ =125°C
0
5
10
15
20
25
RG˄ohm˅
30
35
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 100A IGBT Module
Figure 7: Gate Charge characteristics
Figure 8: Typical Capacitances vs. VCE
25
10
Cies
VCC=600V
IC=100A
TJ =25°C
20
VGE =0V
f=1MHz
C (nF)
VGE (V)
15
10
1
Coes
Cres
5
0
0
0.1
0.2
0.3
Qg˄µC˅
0.4
0.1
0.5
320
1600
240
1200
ICsc (A)
ICpuls (A)
2000
160
TJ =150°C
TC =25°C
VGE =15V
200
400
10
15
20
25
30
35
Figure 10: Short Circuit Safe Operating Area
400
0
0
5
VCE˄V˅
Figure 9: Reverse Biased Safe Operating Area
80
0
800
TJ =150°C
TC =25°C
VGE =15V
tscİ10µs
400
0
600 800 1000 1200 1400
VCE˄V˅
Figure 11: Rated Current vs. TC
0
200
400 600 800 1000 1200 1400
VCE˄V˅
Figure 12: D
iode Forward Characteristics
200
300
TJ =150°C
VGE ı15V
160
250
200
120
IF (A)
IC(A)
TJ =125°C
80
150
100
TJ =25°C
40
0
0
MG12100D-BA1MM
50
25
0
50
75 100 125 150 175
TC Case Temperature(°C)
4
66
0
0.5
1.0
1.5 2.0 2.5
VF˄V˅
3
3.5
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 100A IGBT Module
Figure 13: Transient Thermal Impedance of IGBT
Figure 14: Transient Thermal Impedance of Diode
1
1
-1
10-1
Duty
0.5
0.2
0.1
0.05
Single Pulse
-2
10
ZthJC (K/W)
ZthJC (K/W)
10
10-3
-4
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-2
-3
10
-4
10
-4
10
-2
-1
10-3
10
10
1
Rectangular Pulse Duration (seconds)
Dimensions-Package D
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration (seconds)
Circuit Diagram
M6
1
2.8x0.5
2
8.5
30.0
30.5
3
4
22.0
93.0
6.0
5
6
7
ž6.5
2
28.0
3
28.0
62.0
15.0
6.0
1
4 5
48.0
16.0
7 6
6.0
18
20.0
108.0
Dimensions in mm
MG12100D-BA1MM
5
67
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
1200V 100A IGBT Module
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG12100D-BA1MM
MG12100D-BA1MM
285g
Bulk Pack
60
Part Marking System
Part Numbering System
MG12100 D - B A1 MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
1
3
2
WAFER TYPE
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CIRCUIT TYPE
2x(IGBT+FWD)
CURRENT RATING
PACKAGE TYPE
4
MG12100D-BA1MM
5
6
7
LOT NUMBER
100: 100A
MG12100D-BA1MM
6
68
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15