Power Module 1200V 100A IGBT Module MG12100D-BA1MM RoHS ® Features • Ultra low loss • P ositive temperature coefficient • High ruggedness • W ith fast free-wheeling diodes • H igh short circuit capability Applications • SMPS and UPS • Converter • Induction heating • Welder Agency Approvals AGENCY • Inverter AGENCY FILE NUMBER E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Max Unit Junction-to-Case Thermal Resistance Per IGBT 0.15 K/W Per Inverse Diode 0.30 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m RthJC RthJCD Weight Min Typ 285 g Values Unit V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions IGBT VCES Collector - Emitter Voltage 1200 VGES Gate - Emitter Voltage ±20 V 160 A A IC TC=25°C DC Collector Current ICpuls Pulsed Collector Current TC=80°C 100 TC=25°C, tp=1ms 340 TC=80°C, tp=1ms 220 A Ptot Power Dissipation Per IGBT 1000 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V AC, t=1min Diode VRRM Repetitive Reverse Voltage IF(AV) V 180 A TC=80°C 120 A 180 A TJ =45°C, t=10ms, Sine 860 TJ =45°C, t=8.3ms, Sine 900 Average Forward Current RMS Forward Current IF(RMS) IFSM 1200 TC=25°C Non-Repetitive Surge Forward Current A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12100D-BA1MM 63 1 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA 5.0 6.2 7.0 V Collector - Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25°C 1.8 IC=100A, VGE=15V, TJ=125°C 2.0 IGBT VGE(th) VCE(sat) VCE=1200V, VGE=0V, TJ=25°C ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V,VGE=±20V Qge Gate Charge VCC=600V, IC=100A , VGE=±15V Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance td(on) Rise Time td(off) Turn - off Delay Time Fall Time Eon Turn - on Energy Eoff 4 -400 mA mA 400 1200 nA nC 8.58 VCE=25V, VGE=0V, f =1MHz 0.6 nF 0.4 VCC=600V IC=100A RG =9Ω tf V 1 VCE=1200V, VGE=0V, TJ=125°C Turn - on Delay Time tr V VGE=±15V Inductive Load Turn - off Energy TJ =25°C 270 ns TJ =125°C 290 ns TJ =25°C 60 ns TJ =125°C 60 ns TJ =25°C 480 ns TJ =125°C 550 ns TJ =25°C 60 ns TJ =125°C 65 ns TJ =25°C 12 mJ TJ =125°C 16.8 mJ TJ =25°C 7.4 mJ TJ =125°C 11.6 mJ Diode VF Forward Voltage trr Reverse Recovery Time IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge MG12100D-BA1MM IF=100A , VGE=0V, TJ =25°C 1.9 2.3 V IF=100A , VGE=0V, TJ =125°C 1.7 2.1 V IF=100A , VR=800V diF/dt=-1000A/μs TJ =125°C 230 2 64 ns 80 A 9.7 μC ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 1: Typical Output Characteristics Figure 2: T ypical Transfer characteristics 200 200 160 160 VCE=20V 120 IC (A) IC (A) TJ =25°C TJ =125°C 80 120 80 TJ =125°C 40 40 0 0 TJ =25°C 0.5 1 1.5 2.5 2 VCE(sat)˄V˅ 3 3.5 0 Figure 3: Switching Energy vs. Collector Current 4 6 8 VGE˄V˅ 10 12 14 Figure 4: Switching Energy vs. Gate Resistor 36 120 VCC=600V RG=18ohm VGE=±15V TJ =125°C 80 24 60 Eon 40 20 50 100 150 200 IC˄A˅ 250 300 Eon 18 12 Eoff 6 Eoff 0 0 VCC=600V IC=50A VGE=±15V TJ =125°C 30 Eon Eoff (mJ) 100 Eon Eoff (mJ) 2 0 0 350 Figure 5: Switching Times vs. Collector Current 0 5 10 15 20 25 RG˄ohm˅ 30 35 Figure 6: S witching Times vs. Gate Resistor 3 10 3 10 td(off) td(off) 102 td(on) t (ns) t (ns) td(on) tf 102 tf tr tr 10 0 MG12100D-BA1MM VCC=600V RG=9ohm VGE=±15V TJ =125°C 40 80 120 160 200 I ˄A˅ 240 10 280 65 3 VCC=600V IC=100A VGE=±15V TJ =125°C 0 5 10 15 20 25 RG˄ohm˅ 30 35 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 7: Gate Charge characteristics Figure 8: Typical Capacitances vs. VCE 25 10 Cies VCC=600V IC=100A TJ =25°C 20 VGE =0V f=1MHz C (nF) VGE (V) 15 10 1 Coes Cres 5 0 0 0.1 0.2 0.3 Qg˄µC˅ 0.4 0.1 0.5 320 1600 240 1200 ICsc (A) ICpuls (A) 2000 160 TJ =150°C TC =25°C VGE =15V 200 400 10 15 20 25 30 35 Figure 10: Short Circuit Safe Operating Area 400 0 0 5 VCE˄V˅ Figure 9: Reverse Biased Safe Operating Area 80 0 800 TJ =150°C TC =25°C VGE =15V tscİ10µs 400 0 600 800 1000 1200 1400 VCE˄V˅ Figure 11: Rated Current vs. TC 0 200 400 600 800 1000 1200 1400 VCE˄V˅ Figure 12: D iode Forward Characteristics 200 300 TJ =150°C VGE ı15V 160 250 200 120 IF (A) IC(A) TJ =125°C 80 150 100 TJ =25°C 40 0 0 MG12100D-BA1MM 50 25 0 50 75 100 125 150 175 TC Case Temperature(°C) 4 66 0 0.5 1.0 1.5 2.0 2.5 VF˄V˅ 3 3.5 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Figure 13: Transient Thermal Impedance of IGBT Figure 14: Transient Thermal Impedance of Diode 1 1 -1 10-1 Duty 0.5 0.2 0.1 0.05 Single Pulse -2 10 ZthJC (K/W) ZthJC (K/W) 10 10-3 -4 10 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-2 -3 10 -4 10 -4 10 -2 -1 10-3 10 10 1 Rectangular Pulse Duration (seconds) Dimensions-Package D -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration (seconds) Circuit Diagram M6 1 2.8x0.5 2 8.5 30.0 30.5 3 4 22.0 93.0 6.0 5 6 7 6.5 2 28.0 3 28.0 62.0 15.0 6.0 1 4 5 48.0 16.0 7 6 6.0 18 20.0 108.0 Dimensions in mm MG12100D-BA1MM 5 67 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1200V 100A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12100D-BA1MM MG12100D-BA1MM 285g Bulk Pack 60 Part Marking System Part Numbering System MG12100 D - B A1 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE 1 3 2 WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE 4 MG12100D-BA1MM 5 6 7 LOT NUMBER 100: 100A MG12100D-BA1MM 6 68 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15