MMBTRC101SS…MMBTRC106SS NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Features • With built-in bias resistors Base (Input) R1 R2 • Simplify circuit design Emitter (Common) • Reduce a quantity of parts and SOT-23 Plastic Package manufacturing process Resistor Values Type R1 (KΩ) R2 (KΩ) MMBTRC101SS 4.7 4.7 MMBTRC102SS 10 10 MMBTRC103SS 22 22 MMBTRC104SS 47 47 MMBTRC105SS 2.2 47 MMBTRC106SS 4.7 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Output Voltage Unit VO 50 V 20, -10 MMBTRC102SS 30, -10 MMBTRC104SS Output Current Value MMBTRC101SS MMBTRC103SS Input Voltage Symbol VI 40, -10 40, -10 MMBTRC105SS 12, -5 MMBTRC106SS 20, -5 V IO 100 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Total Power Dissipation C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006 MMBTRC101SS…MMBTRC106SS Characteristics at Ta = 25 OC Parameter DC Current Gain at VO = 5 V, IO = 10 mA MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS Output Cutoff Current at VO = 50 V Input Current at VI = 5 V MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS Output Voltage at IO = 10 mA, II = 0.5 mA Input Voltage (ON) at VO = 0.2 V, IO = 5 mA Input Voltage (OFF) at VO = 5 V, IO = 0.1 mA MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS MMBTRC101SS~104SS MMBTRC105SS~106SS Transition Frequency at VO = 10 V, IO = 5 mA 1) Symbol Min. Typ. Max. Unit GI 30 50 70 80 80 80 - - - IO(OFF) - - 500 nA II - - 1.8 0.88 0.36 0.18 3.6 1.8 mA VO(ON) - - 0.3 V VI(ON) - - 2 2.4 3 5 1.1 1.3 1 0.5 - - V - 200 - MHz VI(OFF) fT 1) V Characteristic of transistor only. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006