SEMTECH_ELEC MMBTRC106SS

MMBTRC101SS…MMBTRC106SS
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Collector
(Output)
Features
• With built-in bias resistors
Base
(Input)
R1
R2
• Simplify circuit design
Emitter
(Common)
• Reduce a quantity of parts and
SOT-23 Plastic Package
manufacturing process
Resistor Values
Type
R1 (KΩ)
R2 (KΩ)
MMBTRC101SS
4.7
4.7
MMBTRC102SS
10
10
MMBTRC103SS
22
22
MMBTRC104SS
47
47
MMBTRC105SS
2.2
47
MMBTRC106SS
4.7
47
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Output Voltage
Unit
VO
50
V
20, -10
MMBTRC102SS
30, -10
MMBTRC104SS
Output Current
Value
MMBTRC101SS
MMBTRC103SS
Input Voltage
Symbol
VI
40, -10
40, -10
MMBTRC105SS
12, -5
MMBTRC106SS
20, -5
V
IO
100
mA
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Total Power Dissipation
C
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 08/12/2006
MMBTRC101SS…MMBTRC106SS
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VO = 5 V, IO = 10 mA
MMBTRC101SS
MMBTRC102SS
MMBTRC103SS
MMBTRC104SS
MMBTRC105SS
MMBTRC106SS
Output Cutoff Current
at VO = 50 V
Input Current
at VI = 5 V
MMBTRC101SS
MMBTRC102SS
MMBTRC103SS
MMBTRC104SS
MMBTRC105SS
MMBTRC106SS
Output Voltage
at IO = 10 mA, II = 0.5 mA
Input Voltage (ON)
at VO = 0.2 V, IO = 5 mA
Input Voltage (OFF)
at VO = 5 V, IO = 0.1 mA
MMBTRC101SS
MMBTRC102SS
MMBTRC103SS
MMBTRC104SS
MMBTRC105SS
MMBTRC106SS
MMBTRC101SS~104SS
MMBTRC105SS~106SS
Transition Frequency
at VO = 10 V, IO = 5 mA
1)
Symbol
Min.
Typ.
Max.
Unit
GI
30
50
70
80
80
80
-
-
-
IO(OFF)
-
-
500
nA
II
-
-
1.8
0.88
0.36
0.18
3.6
1.8
mA
VO(ON)
-
-
0.3
V
VI(ON)
-
-
2
2.4
3
5
1.1
1.3
1
0.5
-
-
V
-
200
-
MHz
VI(OFF)
fT
1)
V
Characteristic of transistor only.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 08/12/2006