MMBTRA110SS…MMBTRA114SS PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector Features • With built-in bias resistors R1 Base • Simplify circuit design • Reduce a quantity of parts and SOT-23 Plastic Package Emitter manufacturing process Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 5 V, -IC = 1 mA Collector Cutoff Current at -VCB = 50 V hFE 120 - - - -ICBO - - 100 nA Emitter Cutoff Current at -VEB = 5 V -IEBO - - 100 nA -VCE(sat) - - 0.3 V fT - 250 - MHz R1 - 4.7 10 100 22 47 - KΩ Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA Transition Frequency at -VCE = 10 V, -IC = 5 mA Input Resistor MMBTRA110SS MMBTRA111SS MMBTRA112SS MMBTRA113SS MMBTRA114SS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006