MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5210W 47 - MMDT521DW 47 10 MMDT5211W 10 10 MMDT521EW 47 22 MMDT5212W 22 22 MMDT521FW 4.7 10 MMDT5213W 47 47 MMDT521KW 10 4.7 MMDT5214W 10 47 MMDT521LW 4.7 4.7 MMDT5215W 10 - MMDT521MW 2.2 47 MMDT5216W 4.7 - MMDT521NW 4.7 47 MMDT5217W 22 - MMDT521TW 22 47 MMDT5218W 0.51 5.1 MMDT521VW 2.2 2.2 MMDT5219W 1 10 MMDT521ZW 4.7 22 Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V IC 100 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Current Total Power Dissipation C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 MMDT5210W…MMDT521ZW Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA Symbol Min. Typ. Max. Unit 20 30 35 60 60 80 80 160 - 200 400 460 - - - 100 nA - - 0.01 0.1 0.2 0.4 0.5 1 1.5 2 V(BR)CBO 50 - - V V(BR)CEO 50 - - V VCEsat - - 0.3 V fT - 250 - MHz -VI(ON) - - 3 2.5 2.5 5 4 3 3 3 1.1 1.7 1.3 1.4 V MMDT5218/521K/521L/521VW MMDT5219/521D/521FW MMDT5211W MMDT5212/521EW MMDT521ZW MMDT5213/5214/521MW MMDT521N/521TW 1) MMDT5210/5215/5216/5217W hFE Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 6 V MMDT5210/5215/5216/5217W MMDT5213W ICBO MMDT5212/5214/521D/521E/521M/521N/521TW MMDT521ZW MMDT5211W MMDT521F/521KW MMDT5219W MMDT5218/521L/521VW Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA Transition Frequency at VCB = 10 V, -IE = 5 mA, f = 100 MHz Input Voltage (ON) at VO = 0.3 V, IO = 20 mA MMDT521V/521L/5219/5218W at VO = 0.3 V, IO = 20 mA MMDT521FW at VO = 0.3 V, IO = 2 mA MMDT521TW at VO = 0.3 V, IO = 2 mA MMDT521DW at VO = 0.3 V, IO = 2 mA MMDT521EW at VO = 0.3 V, IO = 10 mA MMDT5211W at VO = 0.2 V, IO = 5 mA MMDT5212W at VO = 0.3 V, IO = 2 mA MMDT5213/521KW at VO = 0.3 V, IO = 5 mA MMDT521MW at VO = 0.2 V, IO = 5 mA MMDT521ZW at VO = 0.3 V, IO = 5 mA MMDT521NW at VO = 0.3 V, IO = 1 mA MMDT5214W 1) IEBO hFE Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 mA MMDT5210W…MMDT521ZW Characteristics at Ta = 25 OC Parameter Input Voltage (OFF) at VCC = 5 V, IO = 100 µA Input Resistance Resistance Ratio MMDT521V/521L/5211/5212/5213W MMDT5218/5219/521M/521Z/521NW MMDT521F/5214W MMDT521TW MMDT521DW MMDT521K/521EW Symbol Min. Typ. Max. Unit -VI(OFF) 0.5 0.5 0.3 0.4 1 0.8 - - V R1 - 30% 0.51 1 2.2 4.7 10 22 47 + 30% KΩ R1/R2 0.08 0.17 0.37 0.8 1.7 1.7 3.7 0.047 0.1 0.1 0.21 0.21 0.47 0.47 1 1 2.13 2.14 4.7 0.12 0.25 0.57 1.2 2.6 2.6 5.7 - MMDT5218W MMDT5219W MMDT521M/521V MMDT5216/521F/521L/521N/521ZW MMDT5211/5214/5215/521KW MMDT5212/5217/521TW MMDT5210/5213/521D/521EW MMDT521MW MMDT521NW MMDT5218/5219W MMDT521ZW MMDT5214W MMDT521TW MMDT521FW MMDT521VW MMDT5211/5212/5213/521LW MMDT521KW MMDT521EW MMDT521DW SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007