5410 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5410 series are VCXO module ICs supported 20MHz to 62MHz fundamental oscillation. They employ a recently developed varicap diode fabrication process at fixation communication usage that provides a low phase noise characteristic and a wide frequency pulling range without any external components. The 5410 series are ideal for wide pulling range, low phase noise, VCXO modules. FEATURES ▪ VCXO with recently developed varicap diode built-in ▪ Wide frequency pulling range ±150ppm@A1 version, VC=1.65±1.65V, f=40MHz (Crystal unit: γ= 330, C0 = 1.3pF) ±140ppm@B1 version, VC=1.65±1.65V, f=61.44MHz (Crystal unit: γ= 350, C0 = 3.2pF) ▪ Oscillation frequency range (for fundamental oscillation): 20 to 40MHz (A1～A5 version) 40 to 62MHz (B1～B3 version) ▪ Low phase noise: -135dBc/Hz@A1 version, 1kHz Offset, f=40MHz -160dBc/Hz@A1 version, 10MHz Offset, f=40MHz (Crystal unit: γ= 330, C0 = 1.3pF) -126dBc/Hz@B1 version, 1kHz Offset, f=61.44MHz -160dBc/Hz@B1 version, 10MHz Offset, f=61.44MHz (Crystal unit: γ= 350, C0 = 3.2pF) ▪ Operating supply voltage range: 2.97 to 3.63V ▪ Operating current consumption 1.6mA@A1 version, f=40MHz, Q pin no load 2.7mA@B1 version, f=61.44MHz, Q pin no load ▪ Frequency divider built-in Selectable by version: fOSC,fOSC/2,fOSC/4,fOSC/8,fOSC/16 ▪ CMOS output ▪ Output drive capability: 2.8mA ▪ -40 to 105°C operating temperature range ▪ Standby function High impedance in standby mode, oscillator stops ▪ CMOS output duty level (1/2VDD) ▪ 50±5% output duty ▪ Wafer form (WF5410xx) ▪ Chip form (CF5410xx) APPLICATIONS Miniature VCXO modules for fixation communication SERIES CONFIGURATION Output frequency and version name Operating supply voltage Recommended operating range [V] frequency range*1 [MHz] fOSC fOSC/2 fOSC/4 fOSC/8 fOSC/16 20 to 40 5410A1 5410A2 5410A3 5410A4 5410A5 40 to 62 5410B1 5410B2 5410B3 - - 2.97 to 3.63 *1. The recommended oscillation frequency is a yardstick value derived from the resonator used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to resonator characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. ORDERING INFORMATION Device Package WF5410xx-4 Wafer form Version name WF5410□□-4 Form WF:Wafer form CF: Chip (Die) form CF5410xx-4 Chip form Frequency divider function Oscillation frequency range A: 20 to 40MHz B: 40 to 62MHz SEIKO NPC CORPORATION - 1 5410 series PAD LAYOUT (Unit: μm) (420,400) Q 6 Y VDD 7 (0,0) 1 2 (-420,-400) XTN 5 VSS 4 INHN 3 VC XT X Chip size: 0.84mm × 0.80mm Chip thickness: 130μm PAD size: 90μm Chip base: VSS level PIN DESCRIPTION and PAD COORDINATE No. 1 2 Pin XTN XT I/O PAD coordinate [μm] Description O Crystal connection pins. I Crystal is connected between XT and XTN. Oscillation frequency control voltage input pin (positive polarity) X Y -189.0 -295.0 59.4 -295.0 315.0 -244.6 315.0 34.2 3 VC I 4 INHN I 5 VSS - (-) ground 315.0 280.2 6 Q O Output one of fOSC, fOSC/2, fOSC/4, fOSC/8, fOSC/16 -315.0 280.2 7 VDD - (+) supply voltage -315.0 34.2 (frequency increase with increasing voltage) Input pin controlled output state (oscillator stops when LOW), power-saving pull-up resistor built-in BLOCK DIAGRAM RPU1,RPU2 INHN VDD Voltage Regulator XT RVC1 CVC1 OSC Level Shifter 1/N Divider Buffer (CMOS) Q N=1,2,4,8,16 XTN RVC2 CVC2 VC VSS SEIKO NPC CORPORATION - 2 5410 series SPECIFICATIONS Absolute Maximum Ratings VSS=0V Parameter Symbol Condition Rating Unit -0.3 to +5.0 V Input pins -0.3 to VDD+0.3 V Output pins -0.3 to VDD+0.3 V +125 °C -65 to +125 °C *1 VDD Between VDD and VSS *1*2 VIN Supply voltage range Input voltage range *1*2 Output voltage range VOUT Junction temperature*3 Tj Storage temperature range*4 TSTG Wafer form, Chip form Output current*3 IOUT Q pin Ta = -40～+85°C ±20 Ta = -40～+105°C ±10 mA *1. This parameter rating is the values that must never exceed even for a moment. This product may suffer breakdown if this parameter rating is exceeded. Operation and characteristics are guaranteed only when the product is operated at recommended operating conditions. *2. VDD is a VDD value of recommended operating conditions. *3. Do not exceed the absolute maximum ratings. If they are exceeded, a characteristic and reliability will be degraded. *4. When stored in nitrogen or vacuum atmosphere applied to IC itself only (excluding packaging materials). Recommended Operating Conditions VSS=0V Parameter Symbol Condition Rating MIN TYP MAX Unit 5410A1～5410A5 version 20 40 5410B1～5410B3 version 40 62 5410A1～5410A5 version 1.25 40 5410B1～5410B3 version 10 62 VDD Between VDD and VSS*2 2.97 3.63 Input voltage VIN VC pin , INHN pin VSS VDD V Operating temperature Ta -40 +105 °C Output load CL 15 pF Oscillation frequency range*1 fOSC Output frequency range fOUT Operating supply voltage Q pin MHz MHz V *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Mount a ceramic chip capacitor that is larger than 0.01μF proximal to IC (within approximately 3mm) between VDD and VSS in order to obtain stable operation of 5410 series. In addition, the wiring pattern between IC and capacitor should be as wide as possible. Note. Since it may influence the reliability if it is used out of range of recommended operating conditions, this product should be used within this range. SEIKO NPC CORPORATION - 3 5410 series Electrical Characteristics 5410A1～5410A5 version VDD=2.97 to 3.63V, VC=0.5VDD, VSS=0V, Ta= -40 to +105°C unless otherwise noted. Parameter Symbol Rating Condition MIN 5410A1(fOSC), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=40MHz, fOUT=40MHz 5410A2(fOSC/2), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=40MHz, fOUT=20MHz Current consumption IDD 5410A3(fOSC/4), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=40MHz, fOUT=10MHz 5410A4(fOSC/8), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=40MHz, fOUT= 5MHz 5410A5(fOSC/16), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=40MHz, fOUT=2.5MHz VOH measurement 2，Q pin, IOH=-2.8mA LOW-level output voltage VOL measurement 2，Q pin, IOL=2.8mA HIGH-level input voltage VIH measurement 3, INHN pin LOW-level input voltage VIL measurement 3, INHN pin Output leakage current IZ measurement 4, Q pin, Ta=25°C , INHN=“Low” mA 1.1 1.6 mA 1.0 1.5 mA 0.9 1.4 mA μA V 0.4 V V 0.7VDD -1 0.3VDD V 1 μA measurement 5, INHN pin, VINHN=0V 1 3.5 9 MΩ RPU2 measurement 5, INHN pin, VINHN=0.7VDD 23 47 71 kΩ RVC1 measurement 6, between XT and VC 210 420 630 397 793 1190 RVC2 measurement 6, between XTN and VC 116 233 350 VC=0.3V 5.1 5.6 6.2 VC=1.65V 2.5 3.1 3.6 VC=3.0V 1.2 1.5 1.8 VC=0.3V 7.6 8.4 9.3 VC=1.65V 3.8 4.7 5.4 VC=3.0V 1.7 2.3 2.8 A1 version A2, A3, A4, A5 version Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. capacitance CVC2 frequency 1.8 VDD-0.4 Oscillator block built-in Maximum modulation 1.2 RPU1 CVC1 Input leakage resistance mA 100 HIGH-level output voltage resistance 3.0 Ta = -40～+105°C measurement 1, INHN=“Low” Oscillator block built-in 1.6 10 ISTB Pull-up resistance MAX Ta = -40～+85°C Standby current Unit TYP RVIN Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. measurement 7, VC pin, Ta=25°C kΩ pF pF MΩ 10 measurement 10, -3dB frequency, Ta=25°C FM VDD=3.3V, VC=1.65V±1.65V 15 25 kHz crystal=40MHz (R1=42Ω, C0=1.3pF) SEIKO NPC CORPORATION - 4 5410 series 5410B1～5410B3 version VDD=2.97 to 3.63V, VC=0.5VDD, VSS=0V, Ta= -40 to +105°C unless otherwise noted. Parameter Symbol Rating Condition MIN 5410B1(fOSC), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=61.44MHz, fOUT=61.44MHz Current consumption IDD 5410B2(fOSC/2), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=61.44MHz, fOUT=30.72MHz 5410B3(fOSC/4), measurement 1, no load, INHN=”OPEN”, VDD=3.3V, fOSC=61.44MHz, fOUT=15.36MHz VOH measurement 2，Q pin, IOH=-2.8mA LOW-level output voltage VOL measurement 2，Q pin, IOL=2.8mA HIGH-level input voltage VIH measurement 3, INHN pin LOW-level input voltage VIL measurement 3, INHN pin Output leakage current IZ measurement 4, Q pin, Ta=25°C , INHN=“Low” mA 1.6 2.6 mA μA V 0.4 V V 0.7VDD -1 0.3VDD V 1 μA measurement 5, INHN pin, VINHN=0V 1 3.5 9 MΩ RPU2 measurement 5, INHN pin, VINHN=0.7VDD 23 47 71 kΩ RVC1 measurement 6, between XT and VC B1 version 210 420 630 B2, B3 version 303 606 909 RVC2 measurement 6, between XTN and VC 116 233 350 VC=0.3V 5.1 5.6 6.2 VC=1.65V 2.5 3.1 3.6 VC=3.0V 1.2 1.5 1.8 VC=0.3V 5.1 5.6 6.2 VC=1.65V 2.5 3.1 3.6 VC=3.0V 1.2 1.5 1.8 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. capacitance CVC2 frequency 3.2 VDD-0.4 Oscillator block built-in Maximum modulation 2.0 RPU1 CVC1 Input leakage resistance mA 100 HIGH-level output voltage resistance 5.0 Ta = -40～+105°C measurement 1, INHN=“Low” Oscillator block built-in 2.7 10 ISTB Pull-up resistance MAX Ta = -40～+85°C Standby current Unit TYP RVIN Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. measurement 7, VC pin, Ta=25°C kΩ pF pF MΩ 10 measurement 10, -3dB frequency, Ta=25°C FM VDD=3.3V, VC=1.65V±1.65V 15 25 kHz crystal=61.44MHz (R1=20Ω, C0=3.2pF) SEIKO NPC CORPORATION - 5 5410 series Switching Characteristics 5410A1～5410A5 version VDD = 2.97 to 3.63V, VC=0.5VDD, VSS= 0V, Ta = -40 to +105°C unless otherwise noted Parameter Symbol Condition AC HIGH-level output voltage VTOP measurement 8, CL=15pF AC LOW-level output voltage VBASE measurement 8, CL=15pF Q pin Output rise time tr Q pin Output fall time tf Q pin Output duty cycle DUTY Q pin Output enable time tOE Q pin Output disable delay time tOD measurement 8, CL=15pF 0.1VDD→0.9VDD measurement 8, CL=15pF 0.9VDD→0.1VDD Rating MIN TYP 0.9VDD 2.8 Ta = -40～+105°C 6.0 6.5 Ta = -40～+85°C 3.0 Ta = -40～+105°C 6.0 6.5 45 Unit V 0.1VDD Ta = -40～+85°C measurement 8, VDD=3.3V CL=15pF, Ta=25°C, MAX 50 V ns ns 55 % measurement 9, Ta=25°C, CL=15pF 2 ms measurement 9, Ta=25°C, CL=15pF 200 ns Note. The ratings are measured by using the NPC standard crystal and jig. They may vary due to crystal characteristics, so they must be carefully evaluated. 5410B1～5410B3 version VDD = 2.97 to 3.63V, VC=0.5VDD, VSS= 0V, Ta = -40 to +105°C unless otherwise noted Parameter Symbol Condition AC HIGH-level output voltage VTOP measurement 8, CL=15pF AC LOW-level output voltage VBASE measurement 8, CL=15pF Q pin Output rise time tr Q pin Output fall time tf Q pin Output duty cycle DUTY Q pin Output enable time tOE Q pin Output disable delay time tOD measurement 8, CL=15pF 0.1VDD→0.9VDD measurement 8, CL=15pF 0.9VDD→0.1VDD Rating MIN TYP 0.9VDD 2.2 Ta = -40～+105°C 5.0 5.5 Ta = -40～+85°C 2.4 Ta = -40～+105°C 5.0 5.5 45 Unit V 0.1VDD Ta = -40～+85°C measurement 8, VDD=3.3V CL=15pF, Ta=25°C, MAX 50 V ns ns 55 % measurement 9, Ta=25°C, CL=15pF 2 ms measurement 9, Ta=25°C, CL=15pF 200 ns Note. The ratings are measured by using the NPC standard crystal and jig. They may vary due to crystal characteristics, so they must be carefully evaluated. SEIKO NPC CORPORATION - 6 5410 series Switching Time Measurement Waveform VDD 0.9V DD VTOP 0.9VDD Q 0.1VDD 0.1VDD VBASE VSS Tw T tr DUTY measurement voltage 0.5VDD DUTY = Tw/T×100 (%) tf Figure 1. Output switching waveform VDD INHN VIH VIL VSS tOD 0.1V tOE VTOP 0.5VDD Q VBASE 0.1V fout Hi-Z Low fout When INHN goes HIGH to LOW, the Q output becomes high impedance. When INHN goes LOW to HIGH, the Q output goes LOW once and then becomes normal output operation after having detected oscillation signals. Figure 2. Switching waveform controlled output state SEIKO NPC CORPORATION - 7 5410 series FUNCTIONAL DESCRIPTION INHN Function Q output is stopped and becomes high impedance. Power Saving Pull-up Resistor The INHN pin pull-up resistance changes its value to RPU1 or RPU2 in response to the input level (HIGH or LOW). When INHN is tied to LOW level, the pull-up resistance becomes large (RPU1), thus reducing the current consumed by the resistance. When INHN is left open circuit or tied to HIGH level, the pull-up resistance becomes small (RPU2), thus internal circuit of INHN becomes HIGH level. Consequently, the IC is less susceptible to the effects of noise, helping to avoid problems such as the output stopping suddenly. Boot function It becomes easy to start oscillation by making XT pin potential to VDD level when oscillation starts up. A current flows into VC pin when the voltage below a VDD level is being applied to VC pin. A boot function is canceled after an oscillation start. Oscillation Start-up Detector Function The 5410 series have an oscillation detection circuit. The oscillation detection circuit disables the output until crystal oscillation becomes stable when oscillation circuit starts up. This function avoids the abnormal oscillation in the initial power up and in a reactivation by INHN. SEIKO NPC CORPORATION - 8 5410 series MEASUREMENT CIRCUITS MEASUREMENT CIRCUIT 1 Measurement Parameter: IDD, ISTB A Crystal IDD,ISTB 0.01μF VDD XT XTN Q VC INHN VSS Parameter SW1 IDD OFF ISTB ON SW1 MEASUREMENT CIRCUIT 2 Measurement Parameter: VOH, VOL XT input signal : 1.5VP-P sine wave 0.01μF VDD XT Signal 0.001μF 50Ω XTN Q 50Ω VC V INHN VSS Q ΔV VOH VS VS adjusted so that ΔV=50×IOH 0.1μF VS VOH VOL Q ΔV VS VOL VS adjusted so that ΔV=50×IOL SEIKO NPC CORPORATION - 9 5410 series MEASUREMENT CIRCUIT 3 Measurement Parameter: VIH, VIL Crystal 0.01μF VDD XT XTN Q CL=15pF (Including probe capacitance) VC INHN VSS VIH VIL V VIH: VSS→VDD , voltage that changes enable output state VIL: VDD→VSS , voltage that changes disable output state MEASUREMENT CIRCUIT 4 Measurement Parameter: IZ 0.01μF VDD XT Q XTN A IZ VC INHN VSS MEASUREMENT CIRCUIT 5 Measurement Parameter: RPU1, RPU2 0.01μF VDD XT XTN Q VC INHN VSS IINHN A RPU1= (VDD-VINHN)/IINHN, VINHN= 0V VINHN V RPU2= (VDD-VINHN)/IINHN, VINHN= 0.7VDD SEIKO NPC CORPORATION - 10 5410 series MEASUREMENT CIRCUIT 6 Measurement Parameter: RVC1, RVC2 IXT A 0.01μF VDD A XT IXTN XTN Q XT XTN VC VC INHN VSS INHN VSS RVC1=VDD/IXT 0.01μF VDD Q RVC2=VDD/IXTN MEASUREMENT CIRCUIT 7 Measurement Parameter: RVIN IVIN A 0.01μF VDD XT XTN Q VC INHN VSS RVIN=VDD/IVIN MEASUREMENT CIRCUIT 8 Measurement Parameter: DUTY, tr, tf, Pulling Range, CLOSC, VTOP, TBASE Crystal 0.01μF VDD XT XTN VC INHN VSS Q CL=15pF (Including probe capacitance) SEIKO NPC CORPORATION - 11 5410 series MEASUREMENT CIRCUIT 9 Measurement Parameter: tOE, tOD Crystal 0.01μF VDD 1kΩ XT XTN Q VC 1kΩ INHN VSS Function Generator CL=15pF (Including probe capacitance) 50Ω MEASUREMENT CIRCUIT 10 Measurement Parameter: FM Crystal XT XTN Signal Generator (AFG3102) VC input signal: sine wave, 0 to VDD Signal Source Analyzer (E5052A) 0.01μF VDD Q VC INHN VSS EXT Trigger In SEIKO NPC CORPORATION - 12 5410 series REFERENCE DATA The following characteristics are measured using the crystal below. Note that the characteristics will vary with the crystal used. Crystal used for measurement Crystal parameters Parameter 5410Ax 5410Bx fs (MHz) 39.98946 61.40941 C0 (pF) 1.3 3.2 γ(=C0/C1) 330 350 L1 C1 R1 C0 Frequency Pulling Range Pulling Range [ppm] VC=1.65V Standard 180 150 120 90 60 30 0 -30 -60 -90 -120 -150 -180 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 Vc [V] [5410Ax] VDD=3.3V, Ta=25°C, fOSC=40MHz, VC=1.65V Pulling Range [ppm] VC=1.65V Standard 180 150 120 90 60 30 0 -30 -60 -90 -120 -150 -180 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 Vc [V] [5410Bx] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, VC=1.65V Refer to “MEASUREMENT CIRCUIT8” for measurement circuit diagram. SEIKO NPC CORPORATION - 13 5410 series -60 -60 -70 -70 -80 Phase Noise [dBc/Hz] Phase Noise [dBc/Hz] Phase Noise Vc=0V Vc=1.65V Vc=3.3V -90 -100 -110 -120 -130 -140 -150 -80 -110 -120 -130 -140 -150 -160 -160 -170 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 -170 1.E+01 Offset Frequency [Hz] Vc=0V Vc=1.65V Vc=3.3V -90 -100 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 Offset Frequency [Hz] [5410A1] VDD=3.3V, Ta=25°C, fOSC=40MHz, fOUT=40MHz [5410A2] VDD=3.3V, Ta=25°C, fOSC=40MHz, fOUT=20MHz Phas e Noise [dBc/Hz] -60 -70 -80 -90 -100 -110 Vc=0V Vc=1.65V Vc=3.3V -120 -130 -140 -150 -160 -170 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 Offset Frequency [Hz] [5410A3] VDD=3.3V, Ta=25°C, fOSC=40MHz, fOUT=10MHz SEIKO NPC CORPORATION - 14 -60 -60 -70 -70 -80 -80 Phase Noise [dBc/Hz] Phase Noise [dBc/Hz] 5410 series -90 -100 Vc=0V Vc=1.65V Vc=3.3V -110 -120 -130 -140 -90 -100 Vc=0V Vc=1.65V Vc=3.3V -110 -120 -130 -140 -150 -150 -160 -160 -170 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 -170 1.E+01 1.E+02 Offset Frequency [Hz] 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 Offset Frequency [Hz] [5410B1] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, fOUT=61.44MHz [5410B2] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, fOUT=30.72MHz -60 Phase Noise [ d Bc/Hz] -70 -80 -90 -100 Vc=0V Vc=1.65V Vc=3.3V -110 -120 -130 -140 -150 -160 -170 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 Offset Frequency [Hz] [5410B3] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, fOUT=15.36MHz Crystal 0.01μF VDD XT 0.01μF XTN Q 200Ω Signal Source Analyzer (Agilent E5052A) VC INHN VSS CL=15pF Measurement circuit diagram SEIKO NPC CORPORATION - 15 5410 series Negative Resistance 0 -200 N egative R asis tance [Ω ] -400 -600 -800 -1000 -1200 -1400 VC=0V VC=1.65V VC=3.3V -1600 -1800 -2000 0 10 20 30 40 50 60 70 80 70 80 Frequency [MHz] [5410Ax] VDD=3.3V, Ta=25°C, C0=0pF, boot 0 -100 VC=0V VC=1.65V VC=3.3V Negative R asis tance [Ω ] -200 -300 -400 -500 -600 -700 -800 -900 -1000 0 10 20 30 40 50 60 Frequency [MHz] [5410Bx] VDD=3.3V, Ta=25°C, C0=0pF, boot Network-Analyzer (Agilent 4396B) S-Parameter Test Set (Agilent 85046A) C0=0pF 0.01μF VDD XT XTN Q VC INHN VSS Measurement circuit diagram They were performed with Agilent 4396B using the NPC test jig. They may vary in a measurement jig, and measurement environment. SEIKO NPC CORPORATION - 16 5410 series Equivalent Capacity (CLOSC) of Oscillation Circuit 7 6 CLOSC [pF] 5 4 3 2 1 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 2.7 3.0 3.3 Vc [V] [5410Ax] VDD=3.3V, Ta=25°C, fOSC =40MHz 7 6 CLOSC [pF] 5 4 3 2 1 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 Vc [V] [5410Bx] VDD=3.3V, Ta=25°C, fOSC =61.44MHz CLOSC: Equivalent capacity of oscillation circuit requested from oscillation frequency CLosc = C1 2 ⎛ f OSC ⎞ ⎜⎜ ⎟⎟ − 1 ⎝ fs ⎠ − C0 C1: Equivalent series capacity of crystal unit C0: Equivalent parallel capacity of crystal unit fs: Series resonating frequency of crystal unit Refer to “MEASUREMENT CIRCUIT8” for measurement circuit diagram. SEIKO NPC CORPORATION - 17 5410 series Drive Level 100 DL [μW] 80 60 40 20 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.0 3.3 Vc [V] [5410Ax] VDD=3.3V, Ta=25°C, fOSC =40MHz 180 160 140 DL [μW] 120 100 80 60 40 20 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Vc [V] [5410Bx] VDD=3.3V, Ta=25°C, fOSC =61.44MHz Crystal Tektronix CT-6 Current Probe 0.01μF VDD XT XTN Q IX'tal VC INHN VSS CL=15pF Measurement circuit diagram SEIKO NPC CORPORATION - 18 5410 series 3 3 0 0 Fm [dB] 1kHz Standard Fm [dB] 1kHz Standard Maximum Modulation Frequency -3 -6 -9 -3 A2 A3 -6 -9 -12 -12 1 10 1 100 [5410A1] VDD=3.3V, Ta=25°C, fOSC =40MHz 100 [5410A2,A3] VDD=3.3V, Ta=25°C, fOSC =40MHz 3 3 0 0 Fm [dB] 1kHz Standard Fm [dB] 1kHz Standard 10 VC Input Frequency [kHz] VC Input Frequency [kHz] -3 -6 -9 -12 -3 -6 B2 B3 -9 -12 1 10 100 VC Input Frequency [kHz] [5410B1] VDD=3.3V, Ta=25°C, fOSC =61.44MHz 1 10 100 VC Input Frequency [kHz] [5410B2,B3] VDD=3.3V, Ta=25°C, fOSC =61.44MHz Refer to “MEASUREMENT CIRCUIT10” for measurement circuit diagram. SEIKO NPC CORPORATION - 19 5410 series 600 600 500 500 VC Input Impedance [k Ω] VC Input Impedance [k Ω] AC Input Impedance (VC pin) 400 300 200 A2 A3 A4 A5 400 300 200 100 100 0 0 0 10 20 30 40 50 60 70 VC Input Frequency [kHz] 80 90 0 100 10 30 40 50 60 70 VC Input Frequency [kHz] 80 90 100 [5410A2,A3,A4,A5] Ta=25°C, VC=0V 600 600 500 500 VC Input Impedance [k Ω] VC Input Impedance [k Ω] [5410A1] Ta=25°C, VC=0V 20 400 300 200 B2 B3 400 300 200 100 100 0 0 0 10 20 30 40 50 60 70 VC Input Frequency [kHz] [5410B1] Ta=25°C, VC=0V 80 90 100 0 10 20 30 40 50 60 70 VC Input Frequency [kHz] 80 90 100 [5410B2,B3] Ta=25°C, VC=0V VDD XT XTN Impedance Analyzer (HP4194A) Q VC INHN VSS VC input signal: 1kHz to 100kHz, 0.1V p-p Measurement circuit diagram SEIKO NPC CORPORATION - 20 5410 series Operating Current Consumption 2.0 1.5 I DD [mA] A2 A5 A4 A1 A3 1.0 VC=0V VC=1.65V VC=3.3V 0.5 0.0 0 5 10 15 20 25 30 35 40 Output Frequency [MHz] [5410Ax] VDD=3.3V, Ta=25°C 3.0 B1 2.5 B2 B3 IDD [mA] 2.0 1.5 VC=0V VC=1.65V VC=3.3V 1.0 0.5 0.0 10 15 20 25 30 35 40 45 50 55 60 65 Output Frequency [MHz] [5410Bx] VDD=3.3V, Ta=25°C Refer to “MEASUREMENT CIRCUIT1” for measurement circuit diagram. SEIKO NPC CORPORATION - 21 5410 series Frequency Deviation by Voltage 3 Vc=0V Frequency Stability [ppm] VDD=3.3V Standard 2 Vc=1.65V Vc=3.3V 1 0 -1 -2 -3 2.97 3.14 3.30 VDD [V] 3.47 3.63 [5410Ax] VDD=3.3V, Ta=25°C, fOSC =40MHz 3 Vc=0V Frequency Stability [ppm] VDD=3.3V Standard 2 Vc=1.65V Vc=3.3V 1 0 -1 -2 -3 2.97 3.14 3.30 VDD [V] 3.47 3.63 [5410Bx] VDD=3.3V, Ta=25°C, fOSC =61.44MHz Crystal 0.01μF VDD XT XTN Q VC INHN VSS CL=15pF (Including probe capacitance) Measurement circuit diagram SEIKO NPC CORPORATION - 22 5410 series Output Waveform 550mV 5.00ns [5410A1] VDD=3.3V, VC=1.65V, Ta=25°C, fOSC =40MHz, CL=15pF 550mV 3.28ns [5410B1] VDD=3.3V, VC=1.65V, Ta=25°C, fOSC =61.44MHz, CL=15pF Refer to “MEASUREMENT CIRCUIT8” for measurement circuit diagram. Measurement equipment: Oscilloscope Agilent DSO80604B SEIKO NPC CORPORATION - 23 5410 series Please pay your attention to the following points at time of using the products shown in this document. 1. The products shown in this document (hereinafter ”Products”) are designed and manufactured to the generally accepted standards of reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment, transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products. If you wish to use the Products in that apparatus, please contact our sales section in advance. In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any damages resulting from the use of that apparatus. 2. NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof. 3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that infringements. 4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass production products. 5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 1-9-9, Hatchobori, Chuo-ku, Tokyo 104-0032, Japan Telephone: +81-3-5541-6501 Facsimile: +81-3-5541-6510 http://www.npc.co.jp/ Email:[email protected] ND12007-E-02 2013.05 SEIKO NPC CORPORATION - 24