AOC2806 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary • Trench Power AlphaMOS (αMOS LV) technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications VSS IS (at VGS=4.5V) 20V 4.5A RSS(ON) (at VGS=4.5V) < 18mΩ RSS(ON) (at VGS=4.0V) < 20mΩ RSS(ON) (at VGS=3.7V) < 21mΩ RSS(ON) (at VGS=3.1V) < 23mΩ RSS(ON) (at VGS=2.5V) < 29mΩ Typical ESD protection HBM Class 3A • Battery protection switch • Mobile device battery charging and discharging AlphaDFN 1.7x1.7_4 Top View Top View Bottom View D2 D1 Bottom View 2 1 S1 G1 S2 G2 G2 G1 Pin1 4 3 S2 S1 Orderable Part Number Package Type Form Minimum Order Quantity AOC2806 AlphaDFN 1.7x1.7_4 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Source-Source Voltage Symbol VSS Maximum 20 Units V VGS IS ±12 V Source Current(Pulse) Note2 Power Dissipation Note1 TA=25°C ISM 18 Junction and Storage Temperature Range TJ, TSTG Gate-Source Voltage Source Current(DC) Note1 TA=25°C 4.5 PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient RθJA Steady-State Maximum Junction-to-Ambient Note 1. Mounted on 1in2 FR-4 board with 2oz. Copper. Note 2. PW <300 µs pulses, duty cycle 0.5% max Rev.2.0: June 2015 Typ 115 140 www.aosmd.com A 0.7 W -55 to 150 °C Max 140 180 Units °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVSSS Source-Source Breakdown Voltage Conditions Min Typ Max IS=250µA, VGS=0V Test Circuit 6 VSS=20V, VGS=0V Test Circuit 1 1 5 20 Units V ISSS Zero Gate Voltage Source Current IGSS VGS(th) Gate leakage current VSS=0V, VGS=±10V TJ=55°C Test Circuit 2 ±10 µA Gate Threshold Voltage VSS=VGS, IS=250µA Test Circuit 3 0.5 0.85 1.3 V VGS=4.5V, IS=3A Test Circuit 4 10 15 18 14 20.5 25 RSS(ON) Static Source to Source On-Resistance VGS=4.0V, IS=3A 11 15.8 20 mΩ VGS=3.7V, IS=3A Test Circuit 4 11.5 16.3 21 mΩ VGS=3.1V, IS=3A Test Circuit 4 12.5 17.6 23 mΩ VGS=2.5V, IS=3A Test Circuit 4 14.5 21 29 mΩ 1 V gFS Forward Transconductance VSS=5V, IS=3A Test Circuit 3 16 Forward Source to Source Voltage IS=1A,VGS=0V Test Circuit 5 0.68 DYNAMIC PARAMETERS Rg Gate resistance f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VG1S1=4.5V, VSS=10V, IS=3A Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time mΩ TJ=125°C Test Circuit 4 VFSS tD(on) µA VG1S1=4.5V, VSS=10V, RL=3.3Ω, RGEN=3Ω Test Circuit8 S 2 KΩ 12.5 nC 1.0 µs 3.0 µs 2.1 µs 8.8 µs THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: June 2015 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10 2.0V VDS=5V 2.5V 3.0V 3.5V 4.0V 4.5V 10V IS (A) 6 8 6 IS(A) 8 4 125°C 4 VGS=1.5V 2 2 25°C 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VSS (Volts) Figure 1: On-Region Characteristics 35 1.6 25 Normalized On-Resistance 30 RSS(ON) (mΩ) 1 VGS=2.5V 20 VGS=3.1V 15 VGS=4.5V VGS=4.0V VGS=3.7V 10 VGS=4.5V IS=3A 1.4 VGS=4.0V IS=3A VGS=3.7V IS=3A 1.2 VGS=3.1V IS=3A 1 VGS=2.5V IS=3A 0.8 5 0 2 4 6 8 0 10 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature IS (A) Figure 3: On-Resistance vs. Source Current and Gate Voltage 50 1.0E+01 IS=3A 1.0E+00 1.0E-01 30 IS (A) RSS(ON) (mΩ) 40 125°C 1.0E-02 125°C 20 1.0E-03 10 25°C 1.0E-04 25°C 0 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.2.0: June 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VFSS (Volts) Figure 6: Forward Source to Source Characteristics Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VSS=10V IS=3A VGS (Volts) 4 3 2 1 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 100 100.0 TJ(Max)=150°C TA=25°C 10µs 10µs RSS(ON) limited 100µs Power (W) IS (Amps) 10.0 1ms 1.0 10ms 10 1 TJ(Max)=150°C TA=25°C 0.1 DC 0.0 0.01 0.1 1 VSS (Volts) 10 0.1 1E-050.00010.001 0.01 100 ZθJA Normalized Transient Thermal Resistance 1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note1) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note1) 10 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=180°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note1) Rev.2.0: June 2015 www.aosmd.com Page 4 of 5 TEST CIRCUIT 1 Isss TEST CIRCUIT 2 Igss1,2 POSITIVE VSS FOR ISSS+ POSITIVE VGS FOR IGSS1+ S2 NEGATIVE VSS FOR ISSS- S2 NEGATIVE VGS FOR IGSS1When FET1 is measured between GATE and SOURCE G2 A G2 of FET2 are shorted D2 D2 D1 D1 VSS G1 G1 A VG S1 TEST CIRCUIT 3 Vgs(off) S1 TEST CIRCUIT 4 Rss(on) S2 S2 When FET1 is measured Vss/Is between GATE and SOURCE of FET2 are shorted G2 G2 A Is D2 D2 D1 D1 VSS G1 G1 V VSS VGS VGS S1 TEST CIRCUIT 5 VF(SS)1,2 S1 TEST CIRCUIT 6 BVDSS POSITIVE VSS FOR ISSS+ NEGATIVE VSS FOR ISSS- S2 S2 4.5V When FET1 measured G2 G2 IF FET2 VGS=4.5V Is D2 D2 D1 D1 G1 G1 V V VSS VGS=0 S1 S1 TEST CIRCUIT 8 Switching time TEST CIRCUIT 7 BVGSO1,2 POSITIVE VSS FOR ISSS+ NEGATIVE VSS FOR ISSS- S2 Vout S2 When FET1 is measured between GATE and SOURCE G2 of FET2 are shorted G2 D2 D2 D1 D1 Vin G1 G1 V IG Rev.1.0: August 2015 S1 S1 www.aosmd.com Page 5 of 5