CF5074B VCXO Module IC with Built-in Varicap OVERVIEW The CF5074B is VCXO module IC with built-in varicap diodes. The integrated varicap diode BiCMOS process allows the device to be fabricated on a single chip. A newly developed oscillator circuit features reduced drive level of crystal and wide pullrange. A VCXO module can be constructed with just the connection of a crystal unit, making the devices ideal as surface-mounted, compact VCXO modules. FEATURES ■ ■ ■ ■ ■ ■ 2.25 to 3.6V operating supply voltage range 50MHz to 80MHz operating frequency range Varicap diode built-in Oscillation start-up detector function CMOS output duty level 4mA (min) output drive capability ■ ■ ■ ■ 15pF output load Standby function • High impedance in standby mode BiCMOS process Chip form (CF5074B) APPLICATIONS ■ VCXO modules ORDERING INFORMATION Device CF5074B−1 Package Chip form CF5074B−3 SEIKO NPC CORPORATION —1 CF5074B PAD LAYOUT (Unit: µm) (1070,1270) XT 5 VC 6 INHN 7 TESN 8 VSS 4 XTN 3 VDD 2 Q DA5074B 1 (0,0) Chip size: 1.07 × 1.27mm Chip thickness: 300 ± 30µm (CF5074B-1) 180 ± 20µm (CF5074B-3) PAD size: 100 × 100µm (TESN: 80 × 80µm) Chip base: VSS potential PAD DESCRIPTION AND DIMENSIONS Pad dimensions [µm] Pad No. Name I/O Description X Y 1 VSS – (−) supply pin 111 111 2 Q O Output pin. High-impedance in standby mode 958 111 3 VDD – (+) supply pin 958 567 4 XTN O Oscillator output. Crystal connection pin 930 1104 5 XT I Oscillator input. Crystal connection pin 140 1104 6 VC I Oscillation frequency control voltage input pin. Positive polarity (frequency increases with increasing voltage) 140 932 7 INHN I Output state control voltage input pin. Standby mode when LOW. Power-saving pull-up resistor built-in 140 734 8 TESN I Test pin (leave open) 140 547 BLOCK DIAGRAM XTN VDD Oscillator Detection XT RVC3 VC CMOS Output Buffer RVC1 CVC1 RUP RVC2 CVC2 Q VSS INHN SEIKO NPC CORPORATION —2 CF5074B ABSOLUTE MAXIMUM RATINGS VSS = 0V unless otherwise noted. Parameter Symbol Rating Unit Supply voltage range VDD −0.5 to 7.0 V Input voltage range VIN −0.5 to VDD + 0.5 V Output voltage range VOUT −0.5 to VDD + 0.5 V Storage temperature range TSTG −65 to +150 °C Output current IOUT 20 mA RECOMMENDED OPERATING CONDITIONS VSS = 0V unless otherwise noted. Rating Parameter Symbol Unit Min Typ Max Operating supply voltage VDD 2.25 – 3.6 V Output frequency fOUT 50 – 80 MHz Output load capacitance CL – – 15 pF Input voltage VIN VSS – VDD V TOPR –40 +25 +85 °C Operating temperature SEIKO NPC CORPORATION —3 CF5074B ELECTRICAL CHARACTERISTICS VDD = 2.25 to 3.6V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max VDD = 2.25 to 2.75V – 20 30 mA VDD = 3.0 to 3.6V – 26 36 mA IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 80MHz HIGH-level output voltage VOH Q: Measurement circuit 1, IOH = –4mA VDD – 0.4 VDD – 0.2 – V LOW-level output voltage VOL Q: Measurement circuit 1, IOL = 4mA – 0.2 0.4 V VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption IZ Q: Measurement circuit 6, INHN = LOW HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V INHN = VSS 0.4 0.8 1.2 MΩ INHN = 0.7VDD 15 – 150 kΩ 75 150 225 kΩ 75 150 225 kΩ 10 30 90 kΩ VC = 0.3V 13 16.3 19.6 pF VC = 1.65V 6.7 8.9 10.9 pF VC = 3.0V 3.3 4.7 6.1 pF Output leakage current INHN pull-up resistance RUP1 Measurement circuit 3 RUP2 RVC1 Oscillator block built-in resistance RVC2 Measurement circuit 4 RVC3 Oscillator block built-in capacitance CVC Capacitance of CVC1 and CVC2 VC input resistance RVIN Measurement circuit 7, Ta = 25°C 10 – – MΩ VC input impedance ZVIN Measurement circuit 8, VC = 0V, f = 10kHz, Ta = 25°C – 250 – kΩ VC input capacitance CVIN Measurement circuit 8, VC = 0V, f = 10kHz, Ta = 25°C – 60 – pF Modulation bandwidth fm Measurement circuit 9, –3dB frequency, VDD = 3.3V, VC = 3.3Vp-p, Ta = 25°C, crystal: f = 80MHz, C0 = 4.8pF, γ ≤ 440 – 30 – kHz SWITCHING CHARACTERISTICS VDD = 2.25 to 3.6V, VC = 0.5VDD, VSS = 0V, Ta = –40 to +85°C unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max Output rise time tr1 Measurement circuit 2, load circuit 1, 0.2VDD → 0.8VDD, Ta = 25°C, CL = 15pF – 2.5 4 ns Output fall time tf1 Measurement circuit 2, load circuit 1, 0.8VDD → 0.2VDD, Ta = 25°C, CL = 15pF – 2.5 4 ns VDD = 2.5V 40 50 60 % VDD = 3.3V 45 50 55 % – – 100 ns – – 100 ns Output duty cycle Duty Output disable delay time tPLZ Output enable delay time tPZL Measurement circuit 2, load circuit 1, Ta = 25°C, CL = 15pF Measurement circuit 5, load circuit 1, Ta = 25°C, CL ≤ 15pF SEIKO NPC CORPORATION —4 CF5074B MEASUREMENT CIRCUITS Measurement Circuit 1 Measurement Circuit 4 When measuring VOL IXT A VDD VDD XT VC When measuring VOH XTN INHN Q TESN A VSS VC VXTN V VSS V IXTN A VDD RVC1 = (VDD − VXTN) IXT RVC2 = (VDD − VXT) IXTN RVC3 = VXTN IXT XT Measurement Circuit 2 XTN VC VXT V VSS A Crystal VDD XT INHN Measurement Circuit 5 XTN Q VC VSS VC = 0.5VDD, INHN = open, crystal oscillation Signal Generator C1 VDD XT VC R1 Q VSS Measurement Circuit 3 VDD (VR UP = VSS) IRUP (VDD − 0.7VDD) (VR UP = 0.7VDD) RUP2 = IRUP RUP1 = VDD A INHN IRUP VC VSS INHN XT input signal: 10MHz, 1.0Vp-p C1 = 0.001µF, R1 = 50Ω, VC = 0.5VDD Measurement Circuit 6 V VRUP VDD INHN VC = 0.5VDD Q VC A VSS VC = 1/2VDD SEIKO NPC CORPORATION —5 CF5074B Measurement Circuit 7 RVC = VDD IVC Measurement Circuit 9 VDD IVC A VC VSS Gain-phase Analyzer (HP4194A) Modulaiton Analyzer (HP8901B) Modulation signal R1 C1 VC VDD R2 XT Crystal Demodulation signal XTN Q VSS C1 = 20µF, R1 = R2 = 100MΩ, VDD = 3.3V VC modulation signal: 100Hz to 100kHz, 3.3Vp-p Measurement Circuit 8 Load Circuit 1 Q output VC Impedance Analyzer (HP4194A) CL (Including probe capacitance) VSS VC input signal: 100Hz to 10kHz, 0.1Vp-p, VC = 0V SEIKO NPC CORPORATION —6 CF5074B Switching Time Measurement Waveform Output duty level, tr, tf Q output 0.8V DD 0.8V DD 0.2V DD 0.2V DD DUTY measurement voltage (0.5V DD ) TW tr tf Output duty cycle DUTY measurement voltage (0.5V DD) Q output TW DUTY= TW/ T T 100 (%) Output Enable/Disable Delay Times INHN VIH VIL tPZL tPLZ Q output INHN input waveform tr = tf 10ns SEIKO NPC CORPORATION —7 CF5074B FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the device is in standby mode. The Q output becomes high impedance and the oscillator circuit continues running. INHN Q Oscillator HIGH (or open) fO Operating LOW High impedance Operating Power-saving Pull-up Resistor The INHN pin pull-up resistance changes in response to the input level (HIGH or LOW). When INHN is tied LOW, the pull-up resistance becomes large, reducing the current consumed by the resistance. When INHN is left open, the pull-up resistance becomes small, such that even if the input is affected by external noise the outputs are stable due to INHN being tied HIGH by the pull-up resistor. Oscillation Start-up Detector Function The devices also feature an oscillation start-up detector circuit. This circuit functions to disable the outputs until the oscillation starts. This prevents unstable oscillator output at oscillator start-up when power is applied. SEIKO NPC CORPORATION —8 CF5074B TYPICAL CHARACTERISTICS The following characteristics measured using the crystal for NPC characteristics authentication. Note that the characteristics will vary with the crystal used. 200 200 150 150 100 100 Frequency [ppm] Frequency [ppm] Frequency Pullrange, Oscillator Equivalent Capacitance (CL) Characteristics 50 0 −50 50 0 −50 −100 −100 −150 −150 −200 0.0 2.0 1.0 −200 0.0 3.0 1.0 VC [V] 18 18 16 16 14 14 12 12 10 8 8 6 4 4 2 2 2.0 1.0 4.0 10 6 0 0.0 3.0 VDD = 3.3V (VC = 1.65V reference) CL [pF] CL [pF] VDD = 2.5V (VC = 1.25V reference) 2.0 VC [V] 3.0 0 0.0 VC [V] 2.0 VC [V] VDD = 2.5V VDD = 3.3V 1.0 3.0 4.0 Measurement circuit Crystal VDD XT XTN Q VC VSS Crystal: f = 80MHz, C0 = 4.8pF, γ = 440 CL: Oscillator equivalent capacitance is determined by the oscillator frequency. SEIKO NPC CORPORATION —9 CF5074B Negative Resistance Characteristics 20 Frequency [MHz] 60 80 100 120 40 140 160 0 VC = 0V −200 Negative resistance [Ω] Negative resistance [Ω] 0 0 VC = 1.25V −400 VC = 2.5V −600 −800 −1000 0 20 Frequency [MHz] 60 80 100 120 40 140 160 VC = 0V −200 −400 VC = 1.65V −600 VC = 3.3V −800 −1000 VDD = 2.5V VDD = 3.3V Measurement circuit HP8753B Network Analyzer S2 + HP85046 S-Parameter Test Set S1 VDD XT XTN Q VC VSS Modulation Characteristics Measurement circuit fm [dB] 1.0E+00 0 −1 −2 −3 −4 −5 −6 −7 −7 −9 −10 Frequency [kHz] 1.0E+01 1.0E+02 Gain-phase Analyzer (HP4194A) Modulaiton Analyzer (HP8901B) Modulation signal R1 C1 VC VDD R2 XT Crystal Demodulation signal XTN Q VSS C1 = 20µF, R1 = R2 = 100MΩ, VDD = 3.3V VC modulation signal: 100Hz to 100kHz, 3.3Vp-p SEIKO NPC CORPORATION —10 CF5074B Output Waveform Measurement equipment ■ Oscilloscope: 54855A (Agilent) VDD = 2.5V, 15pF load, VC = 1.25V VDD = 3.3V, 15pF load, VC = 1.65V SEIKO NPC CORPORATION —11 CF5074B Relation Between Pulling Range and Constants for Crystal Units 500 450 γ = 300 VC = 0V to 3.3V 400 γ = 337 γ = 315 Pulling range [ppm] 350 γ = 368 γ = 324 γ = 400 300 γ = 440 γ = 500 γ = 411 250 γ = 390 γ = 402 200 γ = 518 γ = 516 γ = 498 150 100 50 0 1.0 1.5 2.0 2.5 3.0 C0 [pF] 3.5 4.0 4.5 5.0 Measurement data when crystal is changed. A B C D E F G H I J L C0 [pF] 4.8 3.6 1.8 1.9 2.2 1.9 2.3 3.9 2.9 2.8 2.3 γ 440 337 518 411 498 516 402 368 315 324 390 Pulling range1 [ppm] 295 381 179 235 177 184 220 346 354 349 227 1. Pulling range: Value of changes in VC voltage from 0V to 3.3V. Measurement circuit Crystal VDD XT XTN Q VC VSS 0 to 3.3V SEIKO NPC CORPORATION —12 CF5074B Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 1-9-9, Hatchobori, Chuo-ku, Tokyo 104-0032, Japan Telephone: +81-3-5541-6501 Facsimile: +81-3-5541-6510 http://www.npc.co.jp/ Email: [email protected] NC0716AE 2007.12 SEIKO NPC CORPORATION —13