+44 (0) 1603 788 967 TBMFT!NJDSPTTDPN XXXNJDSPTTDPN Standard Products Retail+™/COTS/iPEMS Memory Products q SDRAM q SSRAM q "TZOD43". q Non-Volatile Ceramic Memory q DRAM q EEPROM q Flash q SDRAM q SRAM q UVEPROM q VRAM Silicon Carbide (SiC) q %JTDSFUF4DIPUULZT q 4DIPUULZ.PEVMFT q MOSFETs q SJTs q JFETs q 5SBOTJTUPS.PEVMFT Linear Tech Standard Military Devices Micross Components is your single source of high-reliabilty electronics. Retail+™/COTS/iPEMS Product Selector Guide Products Including: q SDRAM 4%3%%3%%3%%3 q SSRAM 1JQFMJOFE'MPXUISV;#- #FOFæUT q "TZOD43". q /PO7PMBUJMF q 0GGUIFTIFMGFYUFOEFEFOWJSPONFOU QSPEVDUT q *NQSPWFEDPTUTBOEQFSGPSNBODF q UFTUFEQSPDFTTFEUP *OEVTUSJBM<*5>$UP$ &OIBODFE<&5>$UP$ &YUFOEFE<95>$UP$ 'MBTI/"/%/03 &&130.OW43". .JDSPTT $PNQPOFOUTn MPOHUFSN FYQFSJFODF BOE LOPXMFEHF JO QSPEVDU FOHJOFFSJOH UFTU BOE TVQQPSU PG UIF )J3FM DPNNVOJUZ IBT MFBE UP UIF EFWFMPQNFOU PG UIF 3FUBJMu $054 BOE J1&. JOUFHSBUFE 1MBTUJD &ODBQTVMBUFE .JDSPDJSDVJU EFWJDFGBNJMJFT q %$"$UFTUFE "UWPMUBHFDPSOFST "UUFNQFSBUVSFFYUSFNFT q *OEVTUSZTUBOEBSEQBDLBHFT q 6QHSBEFBCMFGBNJMJFT q 3P)4DPNQMJBOUPQUJPOT *Does not apply to Retail+™ Product Line. See Retail+™ Product Line çyer Gor details. .JDSPTT $PNQPOFOUTn 3FUBJMu QSPEVDU MJOF FOBCMFT DVTUPNFST UP VTF JOEVTUSZ MFBEJOH DPNQPOFOUT UIBU XFSF OPU QSFWJPVTMZ BWBJMBCMF GPS UIFJS IJSFM MPOH MJGF BQQMJDBUJPOT $054 QBSUT BSF EFWFMPQFE BOE UFTUFE UP JOEVTUSJBM FYUFOEFE BOE NJMJUBSZ UFNQFSBUVSF SBOHFT XJUI CVSOJO BOE UFNQFSBUVSF DZDMJOH BWBJMBCMF BT SFRVFTUFE 3FMJBCJMJUZ JT FOTVSFE CZ MFWFSBHJOH PGG UIF 0&. TVQQMJFSnTRVBMJåDBUJPOBTBDPNQMFNFOUUP.JDSPTTn PXO RVBMJåDBUJPO XIJDI JT CBTFE PO ZFBST PG FYQFSJFODF JO NBOVGBDUVSJOH QSPEVDUT UP NJMJUBSZ BOEPUIFSIJSFMTQFDJåDBUJPOT .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Retail+™/COTS /iPEMS Product Selector Guide Density Organization Part Number Technology Performance Volts Temp. Range 3.3 IT, ET, XT Package(s) Synchronous DRAM SDR 2M x 32 AS4SD2M32DG-xx/tt 8MB -6, -7, -7.5 (ns) 167, 143, 133 (MHz) SDR 4M x 16 AS4SD4M16DG-xx/tt 16MB 8M x 16 AS4SD8M16DG-xx/tt 32MB 16M x 16 64MB TSOP2-86; TSOP2-54 -8, -10 (ns) 125, 100 (MHz) TSOP2-54 SDR -7.5, -10 (ns) 100, 133 (MHz) 3.3 IT, ET, XT TSOP2-54 (DGCR - RoHS Compliant) AS4SD16M16DG-xx/tt SDR -7.5, -10 (ns) 100, 133 (MHz) 3.3 IT, ET, XT TSOP2-54 (DGCR - RoHS Compliant) 32M x 16 AS4SD32M16DG-xx/tt SDR -7.5, -10 (ns) 100, 133 (MHz) 3.3 IT, ET, XT TSOP2-54 (DGCR - RoHS Compliant) 128MB 16M x 72 AS4DDR16M72PBG-xx/tt DDR -6, -7.5, -8, -10 (ns) 333, 266, 250, 200 (Mb/s) 2.5 Core, 2.5 I/O IT, ET, XT iPEM* PBGA-219 256MB 32M x 72 AS4DDR32M72PBG-xx/tt DDR -6, -7.5, -8, -10 (ns) 333, 266, 250, 200 (Mb/s) 2.5 Core, 2.5 I/O IT, ET, XT iPEM* (PBG - PBGA-219) (PBGR - RoHS Compliant) 32M x 64 AS4DDR232M64PBG-xx/tt DDR2 -3, -3.8, -5 (ns) 667, 533, 400 (Mb/s) 1.8 Core, 1.8 I/O IT, ET, XT 32M x 72 AS4DDR232M72PBG-xx/tt iPEM (PBG - PBGA-255) (PBGR - RoHS Compliant) 512MB 64M x 72 AS4DDR264M72PBG-xx/tt DDR2 -3, -3.8, -5 (ns) 667, 533, 400 (Mb/s) 1.8 Core, 1.8 I/O IT, ET, XT iPEM (PBG - PBGA-255) (PBGR - RoHS Compliant) (PBG1 - PBGA-208*) 1GB 128M x 72 MYX4DDR2128M72PBG-xx/tt DDR2 -3, -3.8, -5 (ns) 667, 533, 400 (Mb/s) 1.8 Core, 1.8 I/O IT, ET, XT PBG1 - PBGA-208* 1Gb 64M x16 MYX4DDR264M16HWBG-187EttRy DDR2 1.875ns 1066 1.8 C, IT FPGA - 84 Sn63/Pb37 2Gb 128M x 16 MYX4DDR2128M16PKBG-187EttRy DDR2 1.875ns 1066 1.8 C, IT FPGA - 84 Sn63/Pb37 1Gb 64M x 16 MYX4DDR364M16JTBG-15EttRy DDR3 1.5ns 1333 1.35 C, IT FPGA - 84 Sn63/Pb37 1Gb 64M x 16 MYX4DDR364M16JTBG-15EttRy DDR3 1.5ns 1333 1.35 ET FPGA - 84 Sn63/Pb37 2Gb 128M x 16 MYX4DDR3L128M16JTBG-125ttRy DDR3 1.25ns 1600 1.35 C, IT FPGA - 84 Sn63/Pb37 128K x 32 AS5SP128K32DQ-xx/tt Sync Burst Pipeline -5, -6, -7.5, -10 (ns) 200, 166, 133, 100 (MHz) 3.3 Core, 3.3/2.5 I/O IT, ET, XT TQFP-100 128K x 36 AS5SP128K36DQ-xx/tt Sync Burst Pipeline -3, -3.5, -4 (ns) 200, 166, 133 (MHz) 3.3 Core, 3.3/2.5 I/O IT, ET, XT TQFP-100 256K x 18 AS5SS256K18DQ-xx/tt Sync Burst Flow-Thru -8, -9, -10 (ns) 113, 100, 66 (MHz) 3.3 AS5SP256K36DQ-xx/tt Sync Burst Pipeline -3, -3.5, -4 (ns) 200, 166, 133 (MHz) 3.3 Core, 3.3/2.5 I/O IT, ET, XT AS5SS256K36DQ-xx/tt Sync Burst Flow-Thru -7.5, -8.5, -10 (ns) 117, 100, 66 (MHz) 3.3 IT, XT 512K x 18 AS5SP512K18DQ-xx/tt Sync Burst Pipeline -3, -3.5, -4 (ns) 200, 166, 133 (MHz) 3.3 Core, 3.3/2.5 I/O IT, ET, XT 512K x 36 AS5SP512K36DQ-xx/tt Sync Burst Pipeline -3, -3.5, -4 (ns) 200, 166, 133 (MHz) 3.3 Core, 3.3/2.5 I/O IT, ET, XT DDR DDR2 256MB DDR3 Synchronous SRAM 4Mb 4.5Mb 256K x 36 9Mb 18Mb TQFP-100 TQFP-100 1SPEVDUJOEFWFMPQNFOU"EWBODFJOGPSNBUJPO .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Retail+™/COTS /iPEMS Product Selector Guide Density Organization Part Number Technology Performance Volts Temp. Range Package(s) AS5C2568DJ-xx/tt Asynchronous -12, -15, -20, -25 5 IT, XT PSOJ-28, 300mil -15, -20, -25 5 -10, -12, -15, -20 3.3 IT, XT PSOJ-32, 400mil -12, -15, -17, -20, -25, -35, -45 5 -12, -15, -20, -25 3.3 Asynchronous Ultra Low Power -55, -70, -85, -100 5 Asynchronous -12, -15, -20, -25 Asynchronous SRAM 256Kb 1Mb 32K x 8 AS5C1008DJ-xx/tt 128K x 8 Asynchronous AS5LC1008DJ-xx/tt AS5C512K8DJ-xx/tt 4Mb Asynchronous AS5LC512K8DJ-xx/tt 512K x 8 AS5C4009LLDG-xx/tt 16Mb AS8S512K32PEC-xx/tt 512K x 32 AS8SLC512K32PEC-xx/tt PSOJ-36, 400 mil IT, XT TSOP2-32 5 3.3 IT, ET, XT iPEM, PLCC-68 Non-Volatile 16Mb 2M x 8 1M x 16 AS29LV016JBRG-xx/tt Flash, Bottom Boot Block AS29LV016JTRG-xx/tt Flash, Top Boot Block 1Gb 64M x 16 MYX29GL01GS11DPIV2BG-ITRy 1Gb 64M x 16 MYX28F00AM29EWHBG-ITRy 512Mb 512M x 1 64GB 64G x 8 -70, -90, -100 3.3 IT, ET, XT RG - TSOP1-48 RGR - RoHS Compliant NOR Flash -100ns 2.7V - 3.6V IT FBGA - 64 Sn63/Pb37 NOR Flash -100ns 2.7V - 3.6V IT FBGA - 64 Sn63/Pb37 MYXN25Q512BG-ttRy Serial NOR Flash 108MHz (STR) 2.7V - 3.6V IT, AT TBGA - 24 Sn63/Pb37 MYXFC64GJDDNBG-ITRy Parallel NAND Flash + Controller 52MHz 2.7V - 3.6V IT LFBGA - 169 Sn63/Pb37 Volts Temp. Range Package Revision Retail+TM Memory Products Density Organization Part Number Technology Performance DDR2 1Gb 64M x16 MYX4DDR264M16HWBG-187EttRy DDR2 1.875ns 1066 1.8 C, IT FPGA - 84 Sn63/Pb37 H 2Gb 128M x 16 MYX4DDR2128M16PKBG-187EttRy DDR2 1.875ns 1066 1.8 C, IT FPGA - 84 Sn63/Pb37 C 1Gb 64M x 16 MYX4DDR364M16JTBG-15EttRy DDR3 1.5ns 1333 1.35 C, IT FPGA - 84 Sn63/Pb37 J 1Gb 64M x 16 MYX4DDR364M16JTBG-15EttRy DDR3 1.5ns 1333 1.35 ET FPGA - 84 Sn63/Pb37 G 2Gb 128M x 16 MYX4DDR3L128M16JTBG-125ttRy DDR3 1.25ns 1600 1.35 C, IT FPGA - 84 Sn63/Pb37 K 1Gb 64M x 16 MYX29GL01GS11DPIV2BG-ITRy NOR Flash -100ns 2.7 - 3.6 IT FBGA - 64 Sn63/Pb37 MS4.0 1Gb 64M x 16 MYX28F00AM29EWHBG-ITRy NOR Flash -100ns 2.7 - 3.6 IT FBGA - 64 Sn63/Pb37 A 512Mb 512M x 1 MYXN25Q512A13G12BG-ttRy Serial NOR Flash 108MHz (STR) 2.7 - 3.6 IT, AT, XT TBGA - 24 Sn63/Pb37 A 64GB 64G x 8 MYXFC64GJDDNBG-ITRy Parallel NAND Flash + Cnt'lr 52MHz 2.7 - 3.6 IT LFBGA - 169 Sn63/Pb37 J = Flash; D = Cnt'l DDR3 Non-Volatile Micross Part # Extension-xxxxttRyzzz (e.g. -25EITR) q xxxx4QFFE(SBEFUPEJHJUTXIFOBQQMJDBCMF q R3FUBJM q y1BSU.BSLJOH0QUJPOT q tt5FNQ3BOHFT q #MBOLOPOF ReGer to 5eNp. RanHe coluNn Gor speciæc q --BCFMEFGBVMU teNps oGGered Gor eacI part . q %*OL%PU q $$5PSCMBOL$PNNFSDJBM$UP$ q "-BTFS q *5*OEVTUSJBM$UP$ q zzz4QFDJBM$VTUPN$IBSBDUFST q &5&OIBODFE$UP$ PQUJPOTDPOUSPMMFECZ.JDSPTT q "5"VUPNPUJWF$UP$ q 95.JM$UP$ .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Retail+™/COTS /iPEMS Product Selector Guide Memory Product Nomenclature 1SFæY Code Description AS ASI/Micross MT ASI/Micross/Micron1 MYX Micross SMJ/SM ASI/Micross/TI2 Sample Part Number 1SFæY 1. The MT product line was acquired from Micron Technology. In most cases, these industry established part numbers have been retained, but in no way does this indicate or guarantee a die source. Device Number Access Time MYX4DDR364M16JTBG-15ITRL 2. The SMJ/SM product line was acquired from Texas Instruments. In most cases, these industry established part numbers have been retained. This does not indicate or guarantee a die source. Nomenclature is provided in separate documentation. Product Type/Description Package Options/Processing See individual datasheets for exact part number and option combinations offered. Product Type/Description Code Type Description 41 & 44 4C 28C 58C 58LC 8E 8ER 8ERLC 28F 29F 29GL 29LV 8F 8FLC N25Q PM 80 4DDR 4DDR2 4DDR3 4SD 5C 5LC 8S 8SLC 5SP 5SS 27C 42C 44C 6nvLC 8nvC 8nvLC DRAM DRAM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM FLASH FLASH FLASH FLASH FLASH FLASH FLASH PMIC Processor SDRAM SDRAM SDRAM SDRAM SRAM SRAM SRAM SRAM SSRAM SSRAM UVEPROM VRAM VRAM VRAM VRAM VRAM 5V, EPM 5V, FPM Byte Alterable Hitachi Die 3.3V Multi-chip Module Multi-chip Module, Rad-Tol 3.3V, Multi-chip Module, Rad-Tol Spansion compatible MirrorBit® Eclipse™ 3.3V Multi-chip Module 3.3V, Multi-chip Module Serial NOR Power Management IC SoC 2.5V/1.8V, Double Data Rate 2.5V/1.8V, Double Data Rate II 1.5V/1.35V, Double Data Rate III 3.3V, SDR 5V 3.3V 5V, Multi-chip Module 3.3V, Multi-chip Module Pipelined Flow-thru 3.3V 5V 3.3V Package Code Access Time Description Code Options/Processing ns BG, BG1, BGM1 FBGA 10 10 or 100 C DIP 3 3.0 CN Narrow DIP 11 CW Wide DIP CZ, SV, SVM ZIP DCG Code Description AT -40°C to +125°C 110 CT 0°C to +70°C 12 12 or 120 D Orange Dot 15 15 or 150 FP Gullwing (Formed) 15E 1.5 E Epi Die DCJ SOJ (Formed) 17 17 DG TSOPII ET -40°C to +105°C 20 20 or 200 DJ PSOJ 25 or 250 IT -40°C to +85°C EC, FE, HMM 25 LCC ECA 450 x 550 LCC 25E 2.5 L 2V Data Retention or Label ECG Gullwing LCC 30 30 or 300 35 Ultra Low Power SOJ (Attached) 35 LL ECJ ECN Narrow LCC 45 45 ECW Wide LCC 55 55 F, FN, HKD, HR, HK Flat pack 60 60 FNC LCC 70 70 J, JD, JDD, JDM Side Brazed DIP 75 7.5 or 75 P PGA 85 85 PBG, PBG1 PBGA 90 90 Q CQFP (Gullwing) 100 100 Q1 CQFP (w/special lead) 107 1.07 Q2, Q3, SQ CQFP 120 QB CQFP (w/Tie Bar) QN QFN QJ CQFP (J-lead) QT CQFP (Thin) QW CQFP (1.56” sq.) RG TSOPI SF Flat pack (Rad-Tol) SOJ, HJM SOJ SQB CQFP (Rad-Tol) M or XT -55°C to +125°C MIL MIL-STD-883 equivalent processing compliant to paragraph 1.2.2 -55°C to +125°C Q QML R Retail+ SPACE MIL-STD-883, Method 5004, Class Equivalent 120 ZZZ Special Flow 125 1.25 150 150 883C MIL-STD-883 (previously listed as “M”) 187E 1.87 'PSNPSFJOGPSNBUJPOSFHBSEJOHPVSQSPEVDUT BOETFSWJDFTQMFBTFWJTJUwww.micross.comPS [email protected] .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Standard Ceramic Memory Product Selector Guide Product Line Overview Memory SRAM, DRAM, SDRAM, VRAM, UVEPROM, EEPROM & Flash .JDSPTT $PNQPOFOUT IBT CFFO TVQQMZJOH IJHISFMJBCJMJUZ NFNPSZQSPEVDUTGPSPWFSUXFOUZåWFZFBST"TB2.-TVQQMJFS GVMMZ DFSUJåFE UP "4 BOE *40 .JDSPTT $PNQPOFOUT NFFUT BOE FYDFFET UIF EFNBOET PG UIF NJMJUBSZ BFSPTQBDF USBOTQPSUBUJPO JOEVTUSJBMFNCFEEFE BOE NFEJDBM EJBHOPTUJDNBSLFUT #FOFæUT q 0GGUIFTIFMGTUBOEBSEQSPEVDUTJOGVMM IFSNFUJDDFSBNJDQBDLBHFT q 4.%MJTUFE q *OEVTUSZTUBOEBSEQBDLBHFT q 6QHSBEFBCMFGBNJMJFT 2VBMJUZ-FWFMT1SPHSBNT q %4$$2.q .*-13'DMBTT) DMBTT,JOQSPDFTT q .*-13'DMBTT2 q .*-13'DMBTT7 "TTFNCMZ0OMZ q -BCPSBUPSZTVJUBCJMJUZ.*-45% q 4.%.MFWFMBOE2MFWFM q /454 q $BQBCJMJUJFTGPSDMBTT4NBOVGBDUVSJOH q "4*40DFSUJåFE q $VTUPNFSTQFDJåD4PVSDF$POUSPM %SBXJOH4$% "T UIF åSTU OPO0&. 2.- TVQQMJFS UP CF DFSUJåFE CZ %4$$ .JDSPTT$PNQPOFOUTJTDFSUJåFEUP.*-13'DMBTT2BOE .*-13'DMBTT) .JDSPTT FODPVSBHFT DVTUPNFST UP FOHBHF PO TQFDJBM SFRVJSFNFOUT BOE XJMM XPSL XJUI DVTUPNFST XJUI DIBOHFT UP TUBOEBSE TQFDJåDBUJPOT BT OFFEFE UP TVJU UIFJS BQQMJDBUJPO "U .JDSPTT TQFDJåDBUJPO SFWJTJPO DPOUSPM JT LFZ BOE JT NBOBHFE CZ PVS 2VBMJUZ PSHBOJ[BUJPO "MM NBOVGBDUVSJOH PQFSBUJPOT BOE RVBMJåDBUJPOUFTUTBSFQFSGPSNFEBU.JDSPTTnGBDJMJUZJO0SMBOEP .JDSPTT IBT PWFS QBSU OVNCFST MJTUFE XJUI %4$$ PO WBSJPVT4.%T0VSTUBOEBSEQBDLBHFPGGFSJOHTJODMVEF q q q q q q q q q q $FSBNJDNJM%*1 40+ BOETJEFE-$$ ;*1 (VMM8JOH $2'1 $1(" 'MBU1BDL 'PSNFE-FBE'MBU1BDL .FUBM$BO *U JT PVS HPBM UP DPOUJOVF QSPWJEJOH PVS DVTUPNFST XJUI B GVMM TFSWJDFTPMVUJPOXIJMFVQIPMEJOHUPPVSQFEJHSFFBOEUSBEJUJPOPG TUSJDURVBMJUZBOESFMJBCJMJUZTUBOEBSET .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Standard Ceramic Memory Product Selector Guide Density $POæH (KB) Features Part # 5V, /CE1, /CE2, /OE, Fast ASYNC Access, Low Power AS4C1259 SMD 5962- Speed (ns) 1BDLBHF5ZQFT1JO$PVOUT PGA CQFP FP LCC DIP CSOJ ZIP (VMM8JOH DRAM 256 256K x 1 256K x 4 1,048 SMJ44C256 100-150 90617 5V, Enhanced Page Mode 1M x 1 HK/20 FQ/20 SMJ4C1024 5V, Fast Page Mode 4M x 1 JD/20 80-150 HJ/20 JD/18 MT4C4001J 1M x 4 4,194 EC/18 70-120 ECN/20 C & CN/20 90847 5V, Enhanced Page Mode SMJ44400 5V, Fast Page Mode MT4C1004J 80-120 HR/20 90622 70-120 96743 70-80 HKD/50 SMJ416400 92312 70-100 HKB/28 SMJ626162 97545 12-20 HKD/50 89497 100-120 JD/20 CN/18 SMJ416160 1M x16 16,777 5V, Enhanced Page Mode 4M x 4 SMJ418160 FNC/28 SV/24 SDRAM 16,384 1M x16 3.3V, Bank Interleaving, Pipelined 256K x 4 5V, FPM, Dual Port, Block Write VRAM MT42C4256 1,024 SMJ44C251B EC/28 C/28 DCJ/28 HMM/28 JDM/28 HJM/28 EC & ECA/32 C& CW/32 DCJ & SOJ/32 SVM/28 SRAM 128K x 8 5V, /CE1, /CE2, /OE, Fast ASYNC Access, Low Power MT5C1008 89598 12-70 5V, Single /CE, Fast ASYNC Access, Low Power MT5C1009 89598 & 96691 15-70 MT5C1005 91612 15-20 MT5C1001 92316 20-70 5V, MCM, Byte Selectable Fast SRAM AS8S128K32 93187 & 95595 15-45 3.3V, MCM, Byte Selectable, ASYNC Fast SRAM AS8SLC128K32 5V, Revolutionary Pin-out AS5C512K8 1,024 256K x 4 F/32 C/28 5V, /CE, /OE, Fast ASYNC Access, Low Power 1M x 1 128K x 32 4,096 95600 & 95613 P/66 Q/68 12-55 ECJ/36 AS5LC512K8 5V/CE/OE, Evolutionary Pin-out AS5C4008 95600 & 95613 12-45 5V/CE/OE, Slow, Ultra Low Power AS5C4009LL 95613 55-120 5V, MCM, High Speed, Low Power AS8S512K32 94611 & 95624 17-55 P/66 Q, Q1, Q2 & BQFP/68 3.3V, MCM, /CE,/OE, High Speed, Low Power AS8SLC512K32 10-20 P/66 Q & Q1/68 512K x 32 DCJ/32 P & PN/66 Q & Q1/68 3.3V, Low Power, High Speed 512K x 8 16,384 10-25 F/32 F/36 EC/36 F/32 EC/32 12-20 CW/32 ECJ/32 .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Standard Ceramic Memory Product Selector Guide Density $POæH (KB) Features Part # SMD 5962- Speed (ns) 1BDLBHF5ZQFT1JO$PVOUT PGA CQFP FP LCC DIP CSOJ ZIP (VMM8JOH UVEPROM 256 32K x 8 5V, UV Erasable ROM AS27C256 86063 55-300 ECA/32 J/28 512 64K x 8 5V UV Erasable ROM SMJ27C512 87648 12-25 ECA/32 J/28 1,024 128K x 8 5V, UV Erasable ROM SMJ/AS27C010A 89614 120-200 ECA/32 J/32 4,096 512K x8 5V, UV Erasable ROM SMJ27C040 91752 12-15 5V, Byte Alterable AS28C010 J/32 EEPROM 12-25 F/32 CW/32 38267 1,048 128K x 8 5V, 128 Byte Page Mode, radiation tolerant AS58C1001 150-250 3.3V, 128 Byte Page Mode, radiation tolerant AS58LC1001 250-300 5V, Byte Selectable, Page Mode AS8E128K32 F & SF/32 150-300 P & PN/66 Q & Q3/68 94585 5V, radiation tolerant, w/shielded package, >100K RADS AS8ER128K32 150-250 3.3V, radiation tolerant, w/shielded package, >100K RADS AS8ERLC128K32 250-300 5V,CE/OE, Even Sectored AS29F010 96690 60-150 5V, Even Sectored, Legacy Product SMJ28F010B 90899 120-200 512K x 8 5V, CE/OE, Erase Suspend/Resume AS29F040 96692 55-150 128K x 32 5V, MCM, Even Sectored, Byte Selectable AS8F128K32 94716 60-150 16,384 512K x 32 5V MCM, Even Sectored, Byte Selectable AS8F512K32 94612 70-150 5V, MCM, Even Sectored, Byte Selectable AS8F1M32 32,768 1M x 32 3.3V. Boot Sector, Bottom = B AS8FLC1M32B 5V, Uniform Sector AS8F2M32 3.3V, Boot Sector, Bottom=B, Top=C AS8FLC2M32B 5V, Mixed MCM,128Kx16 SRAM & 512Kx16 FLASH AS8SF384K32 4,096 128K x 32 DCJ/32 SQ, SQB, Q& QB/68 Flash 1,024 F/32 CW/32 SOJ/32 DCG/32 128K x 8 F/32 FE/32 JDD/32 ECA/32 CW/32 DCG/32 4,096 65,528 Q & Q1/68 P/66 Q & Q1/68 90-150 09205 70-120 QT/68 P/66 90-150 Q/68 QT/68 2M x 32 08245 70-120 P/66 Q/68 SRAM & Flash 10,240 640K x 16 35 QT/68 0UIFS$FSBNJD1SPEVDUT Linear/Mixed Signal Digital 7PMUBHF3FHVMBUPST0QFSBUJPOBM"NQT7PMUBHF$PNQBSBUPST"%$ %"$%FWJDFT4XJUDIFT.VMUJQMFYFST4VQFSWJTPSZ$JSDVJUT Radiation Tolerant -JOFBS.JYFETJHOBM.FNPSZ*OUFSGBDF%JTDSFUF%JHJUBM .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Standard Ceramic Memory Product Selector Guide 1SFæY Code .FNPSZ1SPEVDU/PNFODMBUVSF Description AS ASI/Micross .5 ASI/Micross/Micron1 MYX Micross 4.+4. ASI/Micross/TI2 Sample Part Number Device Number 1SFæY 1. The MT product line was acquired from Micron Technology. In most cases, these industry established part numbers have been retained, but in no way does this indicate or guarantee a die source. Access Time . : 9 $ $ - $ 2. The SMJ/SM product line was acquired from Texas Instruments. In most cases, these industry established part numbers have been retained. This does not indicate or guarantee a die source. Nomenclature is provided in separate documentation. Product Type/Description Package Options/Processing See individual datasheets for exact part number and option combinations offered. Product Type/Description Code 5ZQF Package Description Code Description Access Time Code ns 5V, FPM BG, BG1, BGM1 FBGA 10 10 or 100 5V, EPM C DIP 12 12 or 120 3.3V, SDR CN Narrow DIP 15 15 or 150 CW Wide DIP 17 17 CZ, SV, SVM ZIP 20 DCJ SOJ (Formed) DCG FP Gullwing (Formed) 3.3V DG 5V, Multi-chip Module 8SLC 5SP 4C 41 & 44 DRAM 4SD 4DDR SDRAM $5 0°C to +70°C *5 -40°C to +85°C 20 or 200 &5 -40°C to +105°C 25 25 or 250 .PS95 -55°C to +125°C 30 30 or 300 TSOPII 35 35 L 2V Data Retention DJ PSOJ 45 45 LL Ultra Low Power 3.3V, Multi-chip Module EC, FE, HMM LCC 55 55 E Epi Die Pipelined ECA 450 x 550 LCC 60 60 Q QML Flow-thru ECG Gullwing LCC 70 70 ECJ SOJ (Attached) 75 7.5 or 75 883C MIL-STD-883 (previously listed as “M”) ECN Narrow LCC 85 85 ECW Wide LCC 90 90 SPACE MIL-STD-883, Method 5004, Class Equivalent F, FN, HKD, HR, HK Flat pack 100 100 FNC LCC 120 120 MIL 150 150 MIL-STD-883 equivalent processing compliant to paragraph 1.2.2 -55°C to +125°C 2.5V/1.8V, Double Data Rate 5C 5V 8S 5SS 42C 44C SSRAM VRAM 58C Hitachi Die 58LC 3.3V 28C Byte Alterable J, JD, JDD, JDM Side Brazed DIP Multi-chip Module P PGA 8ER Multi-chip Module, Rad-Tol PBG, PBG1 PBGA 8ERLC 3.3V, Multi-chip Module, Rad-Tol Q CQFP (Gullwing) QB CQFP (w/Tie Bar) Spansion compatible QJ CQFP (J-lead) 3.3V Q1 CQFP (w/special lead) Q2, Q3, SQ CQFP SQB CQFP (Rad-Tol) 25 CQFP (Thin) QW CQFP (1.56” sq.) 8E 27C EEPROM UVEPROM 29F 29LV 28F FLASH 8F Multi-chip Module 8FLC 3.3V, Multi-chip Module 6nvLC 3.3V RG TSOPI 5V SF Flat pack (Rad-Tol) 3.3V SOJ, HJM SOJ 8nvC VRAM 8nvLC Description -40°C to +125°C 2.5V/1.8V, Double Data Rate II SRAM Code "5 4DDR2 5LC Options/Processing 'PSNPSFJOGPSNBUJPOSFHBSEJOHPVSQSPEVDUTBOE TFSWJDFTQMFBTFWJTJUwww.micross.com PSDBMM+44 (0) 1603788967 .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Standard Military Device Micross JOQBSUOFSTIJQXJUILinear Technology, Available Now Type GPN DSCC "NQMJæFS LT1006 5962-8993302PA LT1010 5962-8856201XA LT1012 5962-9084201MGA LT1013 5962-8876001XA LT1013 5962-8876002XA LT1084CT 5962-8952101XA q .*-13'$MBTT) LT1085CT 5962-8864601UA q .*-13'$MBTT2GVMM 7BTTFNCMZ LT1086CT 5962-8998101XA LT1086H 5962-8998101YA LT1039 5962-8875101VA LT1181 5962-9172902MEA JTDPNNJUUFEUPTVQQPSUJOHUIF.JM"FSPNBSLFU XJUIUIFGPMMPXJOH4.%QSPEVDUT'VSUIFSQSPEVDU SFMFBTFTXJMMCFBOOPVODFEQFSJPEJDBMMZBTXFXPSL UPQSPWJEFJOOPWBUJWFQSPEVDUTPMVUJPOT .JDSPTT$FSUJæDBUJPOT 3FHVMBUPS q .*-45%-BCPSBUPSZ4VJUBCJMJUZ q "43FW$ RS232 *OUFSGBDF Available Q2 2013 Type GPN DSCC "NQMJæFS LT1006 5962-8993301PA LT1006 5962-8993302GA LT1006 5962-8993302GC LT1006 5962-8993302PC LT1010 5962-8856201XC LT1010 5962-8856201YA LT1011 5962-8856201YC LT1013 5962-88760012A LT1013 5962-8876001GA LT1013 5962-8876001PA LT1013 5962-88760022A LT1013 5962-8876002GA LT1013 5962-8876002PA LT1057 5962-9081702MPA LT1058 5962-8989702CA LT1033CT 5962-8774101UA LT1084CT 5962-8952101YA LT1086CT 5962-8998101UA LT1004-1.2 5962-8859701XA "CPVU.JDSPTT$PNQPOFOUT .JDSPTT $PNQPOFOUT JT UIF MFBEJOH HMPCBM QSPWJEFS PG EJTUSJCVUFE BOE TQFDJBMUZ FMFDUSPOJD DPNQPOFOUT PGGFSJOH UIF CSPBEFTU SBOHF PG NJOJBUVSJ[FE JOUFSDPOOFDU TPMVUJPOTGSPNCBSFEJFUPBMUFSOBUJWFQBDLBHJOHUPSFMBUFE TFNJDPOEVDUPSTFSWJDFT8JUIPWFSZFBSTnFYQFSJFODF JONFFUJOHUIFOFFETPGUIFEFGFOTFTQBDFNFEJDBMBOE PUIFSIJHISFMJBCJMJUZJOEVTUSJFTXIBUXFPGGFSJTNPSFUIBO BDPNQPOFOU.JDSPTTQPTTFTTFTUIFLJOEPGFYQFSJFODF BOE UFDIOJDBM FYQFSUJTF OFFEFE UP JEFOUJGZ BOE TVQQMZ UIFCFTUPQUJPOQFSZPVSEFTJHOBOEQFSGPSNBODFHPBMT 'VSUIFSNPSF HJWFO PVS JOEVTUSZ QPTJUJPO BOE QSPKFDUFE HSPXUI XFnSF B USVTUFE TPVSDF UIBU ZPV DBO DPVOU PO UISPVHIPVUUIFMJGFPGZPVSQSPEVDUBOECFZPOE 3FHVMBUPS RS232 *OUFSGBDF .BZq3FWJTJPO .JDSPTT64"NFSJDBT q.JDSPTT6,&.&"308 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN Silicon Carbide (SiC) Product Selector Guide SiC for your Military, Aerospace, and Down-Hole Applications • Extreme Performance Operation Beyond Mil Temp Elevated Temp Range , -55°C to +210°C Applications Naturally Radiation Tolerant • .PSFFGæDJFOUUIBO4JMJDPO(B"T Lower Conduction and Switching Loss Faster Switching Frequencies Higher Thermal Performance Satellite Solar Inverters • 4DSFFOFEJOBDDPSEBODFXJUI.*-13' • .FUBM$FSBNJD)FSNFUJD1BDLBHJOH Through hole & surface mount options Smaller surface mount diode in development Custom packaging on request Down-Hole Compressor SiC Schottky Diodes 600 & 1200V Blocking Voltage 3 to 15 Amps IF Zero Reverse & Zero Forward Recovery High Frequency Operation High Speed Low Loss Switching SiC FET’s & Transistors 1200V Breakdown Voltages Low On Resistance, 40mΩ to 180 mΩ typical at 25O C Switching Times in ns No Tail Current Low Gate Charge Positive Temp Coefficient Jet Engine Controls MIL-SPEC Power Supplies April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide (SiC) Schottky Diodes Single SiC Power Schottky Diode • High Current • High Voltage • High Temperature • High Reliability • Small Outline • Ceramic and Metal Part Number Voltage AbsoluteMax Current MYXDS0600-03AAS 600V 3A MYXDS0600-05AAS 600V 5A MYXDS0600-10AAS 600V 10A MYXDS1200-03ABS 1200V 3A MYXDS1200-05ABS 1200V 5A MYXDS1200-10ABS 1200V 10A MYXDS1200-15ABS 1200V 15A MYXDS0600-03DA0 600V 3A MYXDS0600-05DA0 600V 5A MYXDS0600-10DA0 600V 10A Package Style BeO Free Temperature Elevated / Extreme Yes 210°C TO-257 Flat LID TO-257 Domed LID SMD 0.5 • BeO Free Options • HMP solder 4J$1PXFS4DIPUULZ3FDUJæFS%JPEF#SJEHF Part Number AC Inputs Voltage AbsoluteMax Current MYXDB0600-10CEN Dual Phase 600V 10A MYXDB0650-10CEN Dual Phase 650V 10A MYXD30600-10CEN Three Phase 600V 10A MYXD30650-10CEN Three Phase 650V 10A Package Style BeO Free Temperature Elevated / Extreme TO-258 5 PIN Yes 210°C TO-258 5PIN TO-257 Flat LID TO-257DomedLID 2 Pin TO-257 Domed LID SMD 0.5 April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide (SiC) Transistors & MOSFETs Single SiC Power MOSFETs • Low RDS(ON) Part Number Voltage Absolute Max Current Package Style BeO Free Temperature Elevated / Extreme MYXMN0600-20DA0 600V 20A SMD 0.5 Yes 210°C MYXMN1200-20CAB 1200V 20A No 210°C MYXMN1200-40CAB 1200V 40A • High Current Single SiC Super Junction Transistors • High Voltage Part Number Voltage Absolute Max Current MYXS00600-15DA0 600V 15A MYXS00600-07DA0 600V 7A MYXS00650-15DA0 650V 15A • High Temperature • High Reliability • Ceramic and Metal TO-258 Package Style BeO Free Temperature Elevated / Extreme SMD 0.5 Yes 210°C • BeO Free Options Single SiC Power JFETs • HMP solder TO-259 Part Number Voltage Absolute Max Current Package Style BeO Free Temperature Elevated / Extreme MYXJ11000-17DA0 1000V 17A SMD 0.5 Yes 175°C MYXJ11200-17ABB 1200V 17A TO-257 Domed MYXJ11200-17BAB 1200V 17A TO-254 MYXJ11200-17CAB 1200V 17A MYXJ11200-34CAB 1200V 34A No 175°C TO-258 4J$1PXFS5SBOTJTUPST%VBM)BMG#SJEHFT TO-258 5 pin TO-258 Part Number Device Type Voltage Absolute Max Current Package Style BeO Free Temperature Elevated / Extreme MYXMH0600-20CEN MOSFET Half Bridge 600V 2 x 20A TO-258 5 pin Yes 210°C MYXM21200-20GAB MOSFET Double 1200V 2 x 20A TO-259 No 210°C MYXB21200-20GAB JFET Double 1200V 2 x 20A TO-259 No 175°C TO-254 SMD 0.5 TO-257Domed Lid April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Part Numbering Rules for SiC Devices SiC Device Nomenclature Sample Part Number Voltage* 1SFæY Package MYXDS1200-15ABS Device Type 1SFæY Code Description MYX Micross Current* Isolating Material * Current values are in Amps and voltage in Volts. * Current values are rated as Absolute Max values. * Character “-” used to separate numberical values. * Character “P” to indicate decimal point. Package Device Type Isolating Material Code Device Type Code Plating Pins Body Eyelet Lid Code Description DS Diode Schottky AA Ni 3 TO-257 Ceramic Flat 0 None AB Ni 3 TO-257 Ceramic Domed AC 2 TO-257 Ceramic Domed B BeO Ni BA Ni 3 TO-254 Ceramic Flat S BeO free CA Ni 3 TO-258 Ceramic Flat DB Diode 2 Phase Bridge D3 Diode 3 Phase Bridge J1 JFET Normally On J0 JFET Normally Off MN MOSFET N Channel MP MOSFET M2 CE Ni 5 TO-258 Ceramic Flat DA Ni 3 SMD 0.5 - Flat P Channel EA Ni 3 SMD 1 - Flat MOSFET 2 Die N Type FA Ni 3 SMD 2 - Flat MH MOSFET Half Bridge GA Ni 6 TO-259 Ceramic Flat BN BJT N Channel BP BJT P Channel B2 BJT 2 Die P Type S0 SJT Normally Off S1 SJT Normally On For more information regarding our products and services, please visit www.micross.com or call +44 (0) 1603788967. April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com About Micross Micross Components is a leading global provider of distributed and specialty electronic components for military, space, medical, and demanding industrial applications. Operating as a single source for high reliability and state-of-the-art electronics, Micross’ solutions range from bare die and wafer processing to advanced and custom QBDLBHJOHUPDPNQPOFOUNPEJåDBUJPOTBOESFMBUFEJOUFSDPOOFDUPGGFSJOHT8JUIB year heritage, Micross possesses the design, manufacturing and logistics expertise OFFEFEUPTVQQPSUBOBQQMJDBUJPOGSPNTUBSUUPåOJTI )FMMFTEPO1BSL3PBE/PSXJDI/PSGPML/3%3 qTBMFT!NJDSPTTDPNqXXXNJDSPTTDPN