Silicon Carbide (SiC) Product Selector Guide SiC for your Military, Aerospace, and Down-Hole Applications • Extreme Performance Operation Beyond Mil Temp Elevated Temp Range , -55°C to +210°C Applications Naturally Radiation Tolerant • More efficient than Silicon, GaAs Lower Conduction and Switching Loss Faster Switching Frequencies Higher Thermal Performance Satellite Solar Inverters • Screened in accordance with MIL-PRF-19500 • Metal / Ceramic Hermetic Packaging Through hole & surface mount options Smaller surface mount diode in development Custom packaging on request SiC Schottky Diodes 600 & 1200V Blocking Voltage 3 to 15 Amps IF Zero Reverse & Zero Forward Recovery High Frequency Operation High Speed Low Loss Switching Down-Hole Compressor SiC FET’s & Transistors 1200V Breakdown Voltages Low On Resistance, 40mΩ to 180 mΩ typical at 25O C Switching Times in ns No Tail Current Low Gate Charge Positive Temp Coefficient Jet Engine Controls MIL-SPEC Power Supplies April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide (SiC) Schottky Diodes Single SiC Power Schottky Diode Part Number Voltage AbsoluteMax Current MYXDS0600-03AAS 600V 3A MYXDS0600-05AAS 600V 5A MYXDS0600-10AAS 600V 10A • High Voltage MYXDS1200-03ABS 1200V 3A MYXDS1200-05ABS 1200V 5A • High Temperature MYXDS1200-10ABS 1200V 10A MYXDS1200-15ABS 1200V 15A MYXDS0600-03DA0 600V 3A MYXDS0600-05DA0 600V 5A MYXDS0600-10DA0 600V 10A • High Current • High Reliability • Small Outline • Ceramic and Metal Package Style BeO Free Temperature Elevated / Extreme Yes 210°C TO-257 Flat LID TO-257 Domed LID SMD 0.5 • BeO Free Options • HMP solder SiC Power Schottky Rectifier / Diode Bridge Part Number AC Inputs Voltage AbsoluteMax Current MYXDB0600-10CEN Dual Phase 600V 10A MYXDB0650-10CEN Dual Phase 650V 10A MYXD30600-10CEN Three Phase 600V 10A MYXD30650-10CEN Three Phase 650V 10A Package Style BeO Free Temperature Elevated / Extreme TO-258 5 PIN Yes 210°C TO-258 5PIN TO-257 Flat LID TO-257DomedLID 2 Pin TO-257 Domed LID SMD 0.5 April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide (SiC) Transistors & MOSFETs Single SiC Power MOSFETs • Low RDS(on) Part Number Voltage Absolute Max Current Package Style BeO Free Temperature Elevated / Extreme MYXMN0600-20DA0 600V 20A SMD 0.5 Yes 210°C MYXMN1200-20CAB 1200V 20A MYXMN1200-40CAB 1200V 40A No 210°C • High Current • High Voltage • High Temperature • High Reliability • Ceramic and Metal Single SiC Super Junction Transistors Part Number Voltage Absolute Max Current MYXS00600-15DA0 600V 15A MYXS00600-07DA0 600V 7A MYXS00650-15DA0 650V 15A • BeO Free Options BeO Free Temperature Elevated / Extreme SMD 0.5 Yes 210°C Part Number Voltage Absolute Max Current Package Style BeO Free Temperature Elevated / Extreme MYXJ11000-17DA0 1000V 17A SMD 0.5 Yes 175°C MYXJ11200-17ABB 1200V 17A TO-257 Domed MYXJ11200-17BAB 1200V 17A TO-254 MYXJ11200-17CAB 1200V 17A MYXJ11200-34CAB 1200V 34A No 175°C TO-258 SiC Power Transistors Dual & Half Bridges TO-258 5 pin TO-258 Package Style Single SiC Power JFETs • HMP solder TO-259 TO-258 Part Number Device Type Voltage Absolute Max Current Package Style BeO Free Temperature Elevated / Extreme MYXMH0600-20CEN MOSFET Half Bridge 600V 2 x 20A TO-258 5 pin Yes 210°C MYXM21200-20GAB MOSFET Double 1200V 2 x 20A TO-259 No 210°C MYXB21200-20GAB JFET Double 1200V 2 x 20A TO-259 No 175°C TO-254 SMD 0.5 TO-257Domed Lid April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Part Numbering Rules for SiC Devices SiC Device Nomenclature Sample Part Number Voltage* Prefix Package MYXDS1200-15ABS Device Type Prefix Code Description MYX Micross Current* Isolating Material * Current values are in Amps and voltage in Volts. * Current values are rated as Absolute Max values. * Character “-” used to separate numberical values. * Character “P” to indicate decimal point. Package Device Type Isolating Material Code Device Type Code Plating Pins Body Eyelet Lid Code Description DS Diode Schottky AA Ni 3 TO-257 Ceramic Flat 0 None AB Ni 3 TO-257 Ceramic Domed AC Ni 2 TO-257 Ceramic Domed B BeO BA Ni 3 TO-254 Ceramic Flat S BeO free CA Ni 3 TO-258 Ceramic Flat DB Diode 2 Phase Bridge D3 Diode 3 Phase Bridge J1 JFET Normally On J0 JFET Normally Off MN MOSFET N Channel MP MOSFET M2 CE Ni 5 TO-258 Ceramic Flat DA Ni 3 SMD 0.5 - Flat P Channel EA Ni 3 SMD 1 - Flat MOSFET 2 Die N Type FA Ni 3 SMD 2 - Flat MH MOSFET Half Bridge GA Ni 6 TO-259 Ceramic Flat BN BJT N Channel BP BJT P Channel B2 BJT 2 Die P Type S0 SJT Normally Off S1 SJT Normally On For more information regarding our products and services, please visit www.micross.com or call +44 (0) 1603788967. April 2015 Rev 2.0 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com