MRF392 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF392 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 300 - 500 MHz Military Communications Band. PACKAGE STYLE .400 8L FLG C D 2 G 1 1 2 F U LL R O F E .19 25 2 .125 FEATURES INCLUDE: K • Gold Metalization • Emitter Ballasting • Input Matching A B 3 H 3 2 4 x .0 60 R I J N L M D IM inche s / m m D .360 / 9.14 16 A VCB 60 V PDISS 270 W @ TC = 25 °C TJ -65 °C to +200 °C .130 / 3.30 F .380 / 9.65 .390 / 9.91 G .735 / 18 .6 7 .765 / 19 .4 3 H .645 / 16 .3 8 .655 / 16 .6 4 I .895 / 22 .7 3 .905 / 22 .9 9 J .420 / 10 .6 7 .430 / 10 .9 2 K .003 / 0.08 .007 / 0.18 L .120 / 3.05 .130 / 3.30 M .159 / 4.04 .175 / 4.45 .395 / 10 .0 3 .405 / 10 .2 9 -55 °C to +200 °C θJC .65 °C/W CHARACTERISTICS SYMBOL .280 / 7.11 N O TSTG .075 / 1.91 .065 / 1.65 E IC .125 / 3.18 .115 / 2.92 C MAXIMUM RATINGS inche s / m m .030 / 0.76 A B M A X IM U M M IN IM UM 1 = COLLECTOR 2 = EMITTER 3 = BASE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 30 V BVCES IC = 50 mA 60 V BVEBO IE = 5.0 Ma 4.0 V ICBO VCB = 30 V Cob VCB = 28 V hFE VCE = 5.0 V IC = 1.0 A Gpe ηc VCE = 28 V Pout = 125 W 5.0 f = 1.0 MHz 52 20 f = 400 MHz 8.0 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF 100 8.5 55 mA --dB % REV. A 1/1