ASI 2N5642

2N5642
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5642 is Designed for
28 V Large Signal Class C Amplifier
Applications up to 175 MHz.
PACKAGE STYLE .380" 4L STUD
FEATURES INCLUDE:
• Emitter Ballasting
• Gold Metalization
• 3/8" SOE Stud Package
MAXIMUM RATINGS
IC
3.0 A
VCE
35 V
VCB
65 V
PDISS
30 W @ TC = 25 C
TJ
-65 C to + 200 C
TSTG
-65 C to + 150 C
θJC
5.8 C/W
O
O
O
O
O
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
O
CHARACTERISTICS
O
TC = 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 200 mA
65
V
BVCEO
IC = 200 mA
35
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
COB
VCB = 30 V
PG
ηC
VCC =28 V
1.0
IC = 200 mA
---
5.0
f = 1.0 MHz
POUT = 20 W
f = 175 MHz
35
8.2
60
mA
10
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.