MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. PACKAGE STYLE 250 2L FLG (C) FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching MAXIMUM RATINGS IC 0.5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 15 °C/W CHARACTERISTICS 1 = COLLECTOR 2 = BASE 3 = EMITTER TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 20 mA 50 V BVEBO IE = 0.25 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCE = 28 V IC = 100 mA 10 f = 1.0 MHz POUT = 2.0 W f = 1700 MHz 8.0 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 100 --- 4.5 pF dB % REV. A 1/1