MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE .250 2L FLG (B) FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching MAXIMUM RATINGS IC 1.0 A VCBO 50 V PDISS 19 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 9.0 C/W O O O O O 1 = COLLECTOR 2 = BASE 3 = EMITTER O CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 25 mA 50 V BVCES IC = 25 mA 55 V BVEBO IE = 3.0 mA 3.5 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCE = 28 V IC = 100 mA 20 f = 1.0 MHz POUT = 6.0 W f = 1400 - 1700 MHz 7.2 100 6.5 pF 7.5 40 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- REV. A 1/1