10SQ030 - Naina Semiconductor Ltd.

10SQ030 thru
10SQ100
Naina Semiconductor Ltd.
Schottky Barrier Rectifier, 10.0 A
Features
•
•
•
•
•
•
Mechanical Data
Diffused junction
Low cost
Low reverse leakage current
High surge current capability & low forward voltage drop
Polarity: Color Band denotes Cathode
High efficiency
• Case: JEDEC R-6 molded plastic
• Polarity: Color band denotes cathode
• Weight: 2.1 grams
• Mounting position: Any
Thermal Specifications (TC = 25oC unless otherwise specified)
Parameters
Maximum operating junction temperature range
Maximum storage temperature range
Typical thermal resistance junction to case
Symbol
TJ
TSTG
RθJC
Values
-55 to +150
-55 to +150
3.0
Units
o
C
o
C
o
C/W
JEDEC R-6
Electrical Characteristics (TC = 25oC unless otherwise specified)
Parameter
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Symbol
12SQ030
12SQ035
12SQ040
12SQ045
12SQ050
12SQ060
12SQ080
12SQ100
Units
VRRM
30
35
40
45
50
60
80
100
V
VRMS
21
24.5
28
31.5
35
42
56
70
V
45
50
60
80
100
V
Maximum DC blocking
VDC
30
35
40
voltage
Maximum average
forward output current @
IF(AV)
TC = 950C
Peak forward surge
current (8.3ms) single half
IFSM
sine-wave superimposed
on rated load
Forward voltage drop @
VF
0.55
10A DC (Note 1)
Typical junction
CJ
capacitance (Note 2)
TA =
Maximum DC
250C
reverse current
IR
at rated DC
TA =
0
blocking voltage
100 C
NOTES:
(1) 300 µs, pulse width, 2% duty cycle
(2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC.
1
10
A
275
A
0.7
0.8
450
V
pF
0.5
mA
50
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Naina Semiconductor Ltd.
10SQ030 thru
10SQ100
Package Outlines
R-6
Dimensions in inches and (millimeters)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com