10A05 A05 - 10A10 Naina Semiconductor emiconductor Ltd. Silicon Rectifier, 10.0A Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & low forward voltage drop • Plastic material carrying UL recognition 94V 94V-0 • Polarity: Color Band denotes Cathode • Lead free finish Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Symbol Parameters Maximum operating junction temperature range Maximum storage temperature range Typical thermal resistance junction to ambient Approximate weight TJ TStg Values Units - 55 to + 125 - 55 to + 150 RθJA 10 W 2.1 0 C 0 C JEDEC R-6 R 0 C/W g Electrical Characteristics (TA = 250C unless otherwise specified specified) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load Maximum DC forward voltage drop per element @ 10 A Typical junction capacitance Maximum DC reverse TA = 250C current at rated DC TA = 1000C blocking voltage 1 Symbol 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Units VRRM 50 100 200 400 600 800 1000 V VRMS VDC 35 50 70 100 140 200 280 400 420 600 560 800 700 1000 V V IF(AV) 10 A IFSM 600 A VF 1.0 V CJ 150 pF 10 IR µA 100 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Naina Semiconductor emiconductor Ltd. 10A05 A05 - 10A10 Dimensions in inches and (millimeters) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com