IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole 0.018 RoHS* COMPLIANT • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP048PbF SiHFP048-E3 IRFP048 SiHFP048 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currente Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d Mounting Torque for 10 s 6-32 or M3 screw V 70 52 A IDM 290 1.3 W/°C EAS 200 mJ PD 190 W dV/dt 4.5 V/ns TJ, Tstg - 55 to + 175 Linear Derating Factor Single Pulse Avalanche Energyb UNIT 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 Ω, IAS = 73 A (see fig. 12). c. ISD ≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Current limited by the package (die current = 73 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91198 S11-0447-Rev. B, 14-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP048, SiHFP048 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.80 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 μA 60 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V IGSS VGS = ± 20 V - - ± 100 nA VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 IDSS RDS(on) gfs ID = 44 Ab μA - - 0.018 Ω VDS = 25 V, ID = 44 Ab 20 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2400 - - 1300 - - 190 - - - 110 VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss pF Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 29 Gate-Drain Charge Qgd - - 38 Turn-On Delay Time td(on) - 8.1 - tr - 250 - - 210 - - 250 - - 5.0 - - 13 - - - 70c - - 290 - - 2.0 V - 120 180 ns - 0.50 0.80 μC Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VGS = 10 V ID = 72 A, VDS = 48 V see fig. 6 and 13b VDD = 30 V, ID = 72 A, Rg = 9.1 Ω, RD = 0.34 Ω, see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 73 A, VGS = 0 Vb TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. c. Current limited by the package (die current = 73 A). www.vishay.com 2 Document Number: 91198 S11-0447-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP048, SiHFP048 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91198 S11-0447-Rev. B, 14-Mar-11 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP048, SiHFP048 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91198 S11-0447-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP048, SiHFP048 Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91198 S11-0447-Rev. B, 14-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP048, SiHFP048 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - IAS V DD A VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91198 S11-0447-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP048, SiHFP048 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91198. Document Number: 91198 S11-0447-Rev. B, 14-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-247AC (HIGH VOLTAGE) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 5 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L See view B 2 x b2 3xb 0.10 M C A M 5 E1 A 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Planting D DE Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. INCHES MIN. MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 BSC b1 0.99 1.35 0.039 0.053 Øk b2 1.65 2.39 0.065 0.094 L 14.20 16.10 b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 b4 2.59 3.43 0.102 0.135 N 0.215 BSC 0.254 0.010 7.62 BSC 0.559 0.634 0.146 0.169 0.300 BSC b5 2.59 3.38 0.102 0.133 ØP 3.56 3.66 0.140 0.144 c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC ECN: S-81920-Rev. A, 15-Sep-08 DWG: 5971 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. Document Number: 91360 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1