MTP50A1

MTP50A1
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Glass Passivated Triple-Phase Bridge Rectifier, 50A
MTP5006A1 Thru MTP5016A1
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
Typical IR less than 1.0 µA
All dimensions in millimeters
High surge current capability
Low thermal resistance
Solder dip 260°C, 40s
Compliant to RoHS
Glass passivated chips
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for DC motor,
industrial automation applications.
MECHANICAL DATA
Case: GBPC
Epoxy meets UL 94 V-O flammability rating
Terminals: Gold plated on faston lugs or gold plated on
wire leads,solderable per J-STD-002 and
JESD22-B102.
Polarity: As marked
Mounting Torque: 20 inches-lbs.max.
Weight: 21g (0.74 ozs)
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Page 1 of 3
PRIMARY CHARACTERRISTICS
IF(AV)
50A
V RRM
600V to 1600V
I FSM
500A
IR
5 µA
VF
1.2V
T J max.
150ºC
MTP50A1
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP50..A1
PARAMETER
SYMBOL
UNIT
06
08
10
12
16
Maximum repetitive peak reverse voltage
V RRM
600
800
1000
1200
1600
V
Maximum RMS voltage
V RMS
420
560
700
840
1120
V
V DC
600
800
1000
1200
1600
V
Maximum DC blocking voltage
I F(AV)
50
A
I FSM
500
A
I 2t
1000
A 2s
V ISO
2500
V
T J ,T STG
-55 to 150
ºC
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode
TEST
CONDITIONS
SYMBOL
I F = 25A
VF
Maximum reverse DC current at rated DC blocking
T A = 25°C
voltage per diod
T A = 150°C
Typical junction capacitance per diode
MTP50..A1
06
08
10
12
UNIT
16
1.2
V
5
IR
µA
1000
CJ
4V, 1MHz
pF
300
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
MTP50..A1
PARAMETER
SYMBOL
06
08
R θJC (1)
Typical thermal resistance
10
1.0
12
UNIT
16
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
#10 screw
ORDERING INFORMATION TABLE
MTP
Device code
1
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50
16
A1
2
3
4
1
-
Module type: 3 phase Bridge
2
-
Current rating: IF(AV)
3
-
Voltage code x 10: VRRM
4
-
Package outline,A1 for “GBPC”package
Page 2 of 3
MTP50A1
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.2 Typical Forward Characteristics
AVERAGE FORWARD CURRENT - IF (A)
50
Mounted on a
220x220x50mm
Al plate heatsink
40
30
20
10
Resistive or
Inductive load
0
0
50
100
150
INSTANTANEOUS FORWARD CURRENT - IF (A)
Fig.1 Forward Current Derating Curve
50
40
30
20
10
typ.
0.6
1.0
1.2
1.4
1.6
400
300
200
100
8.3ms Single Half
Sine-Wave JEDEC Method
0
100
NUMBER OF CYCLES AT 60 HZ
Fig.4 Transient thermal impedance
TRANSIENT THERMAL IMPEDANCE - Rthjc ( ℃ / W)
PDAK FWD SURGE CURRENT - IFSM (A)
500
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0.8
INSTANTANEOUS FORWARD VOLTAGE - V F (V)
Fig.3 Max Non-Repetitive Peak Surge Current
10
Tj=25℃
Pulse Width=300μs
0
CASE TEMPERATURE - TC (℃)
1
max.
1.0
Zth(j-C)
0.5
0
0.001
0.01
0.1
1.0
10
SQUARE WAVE PULSE DURATION (S)
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100