GBPC50 SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 50A GBPC5006 Thru GBPC5016 FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA ~ - High surge current capability Low thermal resistance + Solder dip 260°C, 40s Compliant to RoHS Glass passivated chips TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA Case: GBPC Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 16g (0.56 ozs) Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) + ~ ~ - 1.135 (28.8) 1.115 (28.3) 0.672 (17.1) 0.632 (16.1) AC 0.672 (17.1) 0.632 (16.1) 1.135 (28.8) 1.115 (28.3) 0.582 (14.8) 0.542 (13.8) 0.034 (0.86) 0.030 (0.76) 0.732 (18.6) 0.692 (17.6) 0.094 (2.4) DIA. 0.034 (0.86) 0.030 (0.76) 0.25 (6.35) 0.840 (21.3) 0.740 (18.8) 0.381 (9.70) 0.366 (9.30) All dimensions in inches (millimeters) www.nellsemi.com Page 1 of 3 GBPC50 SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 50A V RRM 600V to 1600V I FSM 450A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC50 PARAMETER UNIT SYMBOL 06 08 10 12 16 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 1600 V Maximum RMS voltage V RMS 420 560 700 840 1120 V Maximum DC blocking voltage V DC 600 800 1000 1200 1600 Maximum average forward rectified output current (Fig.1) I F(AV) 50 A I FSM 450 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 840 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking TEST CONDITIONS SYMBOL I F = 25A VF T A = 25°C voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz GBPC50 06 08 10 UNIT 12 16 1.1 V 5 IR µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER GBPC50 SYMBOL 06 Typical thermal resistance R θJC (1) 08 10 1.4 UNIT 12 16 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 3 GBPC50 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Case temperature vs on-state average current Fig.1 On-state current and voltage 100 On-state average current (A) Peak on-state current (A) 100 10 1.0 0.1 80 60 40 20 T j = 25°C Pulse Width = 300μs 00.1 0 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 1.6 1.8 0 50 100 Peak on-state voltage (V) Case temperature (°C) Fig.3 On-state surge current vs cycles 500 On-state surge current (A) Single half-sine-wave (JEDEC method) 400 T J = 25°C 300 200 100 0 1 10 100 Cycles @50Hz www.nellsemi.com Page 3 of 3 150