WF4M32-XXX5 White Electronic Designs 4MX32 5V FLASH MODULE, SMD 5962-97612 (pending) PRELIMINARY* FEATURES n Organized as 4Mx32 n Access Times of 100, 120, 150ns n Packaging: n User configurable as 8Mx16 or 16Mx8 in HIP and G4T packages. n Commercial, Industrial, and Military Temperature Ranges • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP (Package 402). n 5 Volt Read and Write. 5V ± 10% Supply. n Low Power CMOS • 68 lead, 40mm Low Profile CQFP ( Package 502 ), 3.5mm (0.140") height. n Data Polling and Toggle Bit feature for detection of program or erase cycle completion. • 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square (Package 509) 4.57mm (0.180") height. Designed to fit JEDEC 68 lead 0.990CQFJ footprint (Fig. 3) n n Supports reading or programming data to a sector not being erased. n RESET pin resets internal state machine to the read mode. Sector Architecture • 32 equal size sectors of 64KBytes per each 2Mx8 chip n Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation, Separate Power and Ground Planes to improve noise immunity • Any combination of sectors can be erased. Also supports full chip erase. n *This data sheet describes a product under development, not fully characterized, and is subject to change without notice. Minimum 100,000 Write/Erase Cycles Minimum Note: For programming information refer to Flash Programming 16M5 Application Note. FIG. 1 PIN CONFIGURATION FOR WF4M32-XH2X5 PIN DESCRIPTION TOP VIEW 1 12 I/O8 23 I/O15 RESET CS2 I/O9 34 I/O14 45 VCC I/O24 I/O 0-31 Data Inputs/Outputs A 0-21 Address Inputs WE Write Enables I/O31 CS4 I/O25 56 I/O30 CS1-4 Chip Selects OE Output Enable I/O10 GND I/O13 I/O26 NC I/O29 VCC Power Supply A14 I/O11 I/O12 A7 I/O27 I/O28 GND Ground RESET Reset A16 A10 OE A12 A4 A1 A11 A9 A17 A21 A5 A2 A0 A15 WE A13 A6 A3 BLOCK DIAGRAM CS 1 CS3 CS 2 CS 4 A21 A18 VCC I/O7 A8 A20 I/O23 I/O0 CS1 I/O6 I/O16 CS3 I/O22 I/O1 A19 I/O5 I/O17 GND I/O21 I/O2 I/O3 I/O4 I/O18 I/O19 I/O20 OE WE A0-20 RESET 11 22 33 44 55 2M x 8 2M x 8 2M x 8 66 I/O0-7 August 2002 Rev. 4 1 2Mx 8 2M x 8 2M x 8 2M x 8 2M x 8 I/O8-15 I/O16-23 I/O24-31 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WF4M32-XXX5 White Electronic Designs PIN CONFIGURATION F OR WF4M32-XG4TX5 TOP VIEW P IN D ESCRIPTION I/O 0-31 Data Inputs/Outputs NC A0 A1 A2 A3 A4 A5 CS1 GND CS3 WE A6 A7 A8 A9 A10 VCC FIG. 2 A0-21 Address Inputs WE Write Enable CS1-4 Chip Selects OE Output Enable VCC Power Supply 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 RESET Reset GND Ground NC Not Connected BLOCK DIAGRAM CS 1 OE WE BUFFER RESET 2M x 8 A21 RESET NC VCC A11 A12 A13 A14 A15 A16 CS2 OE CS4 A17 A18 A19 A20 2M x 8 2M x 8 2M x 8 2M x 8 I/O0-7 I/O8-15 I/O16-23 P IN CONFIGURATION FOR WF4M32-XG2TX5 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. Address Inputs WE Write Enables CS1-2 Banks Selects OE Output Enable VCC Power Supply GND Ground RESET Reset BLOCK DIAGRAM 8 2M x 8 2M x 8 2M x 8 2M x 8 8 2M x 8 2M x 8 2M x 8 A19 A20 OE CS2 A17 NC NC NC A18 A16 CS1 A15 A14 A13 A12 A11 A 0-20 CS 1 RESET WE OE A0-20 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 VCC I/O24-31 I/O 0-31 Data Inputs/Outputs RESET A0 A1 A2 A3 A4 A5 NC GND NC WE A6 A7 A8 A9 A10 VCC 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 2M x 8 P IN D ESCRIPTION 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 2M x 8 2M x 8 TOP VIEW I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 CS 4 A0-20 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 FIG. 3 CS3 CS 2 A21 8 2M x 8 8 CS 2 I/O0-7 I/O8-15 I/O16-23 I/O24-31 Note: CS1& CS2 are used as bank select White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 2 WF4M32-XXX5 White Electronic Designs A BSOLUTE MAXIMUM RATINGS Parameter CAPACITANCE (PF) (TA = +25°C, VIN = OV, F = 1.0MH Z ) Symbol Ratings Unit VT -2.0 to +7.0 V Parameter W OE capacitance COE 75 75 Voltage on Any Pin Relative to VSS Power Dissipation Symbol HIP (H2) CQFP (G2T) CQFP( G4T) 20 PT 8 Storage Temperature Tstg -65 to +125 °C WE capacitance CWE 75 75 20 Short Circuit Output Current IOS 100 mA CS capacitance CCS 20 50 20 100,000 min cycles Data I/O capacitance CI/O 30 30 30 Address input capacitance CAD 75 75 20 Endurance - Write/Erase Cycles (Mil Temp) Data Retention (Mil Temp) 20 years This parameter is guaranteed by design but not tested. RECOMMENDED DC OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.0 - V CC + 0.5 V Input Low Voltage V IL -0.5 - +0.8 V Operating Temperature (Mil.) TA -55 - +125 °C Operating Temperature (Ind.) TA -40 - +85 °C DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C) Parameter Input Leakage Current Output Leakage Current Symbol Conditions I LI VCC = 5.5, VIN = GND to VCC Min HIP Max Min G2T Max 10 G4T Min Max 10 10 Unit µA I LOx32 VCC = 5.5, VIN = GND to VCC 10 10 10 µA VCC Active Current for Read (1) I CC1 CS = VIL, OE = VIH, f = 5MHz 320 215 345 mA VCC Active Current for Program or Erase (2) I CC2 CS = VIL, OE = VIH 420 295 445 mA VCC Standby Current I CC3 VCC = 5.5, CS = VIH, f = 5MHz, RESET = VIH Output Low Voltage VOL IOL = 12.0 mA, VCC = 4.5 Output High Voltage VOH IOH = -2.5 mA, VCC = 4.5 Low VCC Lock-Out Voltage VLKO 20 2.0 95 mA 0.45 0.45 0.45 V 0.85 x Vcc 3.2 0.85 x Vcc 4.2 3.2 0.85 x Vcc 4.2 3.2 V 4.2 V NOTES: 1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than 2mA/MHz, with OE at VIH. 2. Icc active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions V IL = 0.3V, V IH = V CC - 0.3V HIP = 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP (Package 402). G2T = 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square. Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3) (Package 509) G4T = 68 lead, 40mm Low Profile CQFP, 3.5mm (0.140") (Package 502 ) 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WF4M32-XXX5 White Electronic Designs AC CHARACTERISTICS FOR G2T PACKAGE WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Symbol -100 Min -120 Max Min -150 Max Min Unit Max Write Cycle Time tAVAV tWC 100 120 150 ns Chip Select Setup Time tELWL tCS 0 0 0 ns Write Enable Pulse Width tWLWH tWP 45 50 50 ns Address Setup Time tAVWL tAS 0 0 0 ns Data Setup Time tDVWH tDS 45 50 50 ns Data Hold Time tWHDX tDH 0 0 0 ns Address Hold Time t WLAX tAH 45 50 50 ns Write Enable Pulse Width High tWHWL tWPH 20 20 20 ns Duration of Byte Programming Operation (1) tWHWH1 300 300 300 µs Sector Erase (2) tWHWH2 15 15 15 sec Read Recovery Time before Write t GHWL V CC Setup Time t VCS 0 0 0 50 50 50 Chip Programming Time 44 Chip Erase Time (3) µs 44 256 Output Enable Hold Time (4) µs 256 44 sec 256 sec tOEH 10 10 10 ns tRP 500 500 500 ns RESET Pulse Width NOTES: 1. Typical value for tWHWH1 is 7µs. 2. Typical value for tWHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling. AC CHARACTERISTICS FOR G2T PACKAGE READ-ONLY OPERATIONS (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Symbol -100 Min -120 Max 100 Min -150 Max 120 Min Unit Max Read Cycle Time t AVAV t RC Address Access Time t AVQV tACC 100 120 150 150 ns Chip Select Access Time t ELQV t CE 100 120 150 ns Output Enable to Output Valid t GLQV tOE 40 50 55 ns ns Chip Select High to Output High Z (1) t EHQZ t DF 20 30 35 ns Output Enable High to Output High Z (1) t GHQZ t DF 20 30 35 ns Output Hold from Addresses, CS or OE Change, whichever is First t AXQX tOH RST Low to Read Mode (1) 0 20 t Ready 1. Guaranteed by design, not tested. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 0 4 0 20 ns 20 µs WF4M32-XXX5 White Electronic Designs AC CHARACTERISTICS FOR G2T PACKAGE WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED (VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C) Parameter Symbol -100 Min -120 Max Min -150 Max Min Unit Max Write Cycle Time tAVAV tWC 100 120 150 ns Write Enable Setup Time tWLEL tWS 0 0 0 ns Chip Select Pulse Width tELEH tCP 45 50 50 ns Address Setup Time tAVEL tAS 0 0 0 ns Data Setup Time tDVEH tDS 45 50 50 ns Data Hold Time tEHDX tDH 0 0 0 ns Address Hold Time tELAX tAH 45 50 50 ns Chip Select Pulse Width High tEHEL tCPH 20 20 20 Duration of Byte Programming Operation (1) t WHWH1 Sector Erase Time (2) t WHWH2 Read Recovery Time tGHEL 300 15 0 15 0 Chip Programming Time 44 Chip Erase Time (3) Output Enable Hold Time (4) 300 10 256 10 µs 15 sec 44 sec 256 sec 0 44 256 tOEH ns 300 10 µs ns NOTES: 1. Typical value for tWHWH1 is 7µs. 2. Typical value for tWHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling. 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WF4M32-XXX5 White Electronic Designs AC CHARACTERISTICS FOR G4T A ND H2 PACKAGES WRITE/ERASE/P ROGRAM OPERATIONS - WE CONTROLLED (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Symbol -100 Min -120 Max Min -150 Max Min Unit Max Write Cycle Time tAVAV tWC 100 120 150 ns Chip Select Setup Time t ELWL tCS 0 0 0 ns Write Enable Pulse Width tWLWH tWP 45 50 50 ns Address Setup Time t AVWL tAS 0 0 0 ns Data Setup Time tDVWH tDS 45 50 50 ns Data Hold Time tWHDX tDH 15 15 15 ns Address Hold Time (1) t WLAX tAH 45 50 50 ns Write Enable Pulse Width High (2) tWHWL tWPH 20 20 20 Duration of Byte Programming Operation (3) t WHWH1 Sector Erase (4) t WHWH2 Read Recovery Time before Write t GHWL V CC Setup Time t VCS 300 ns 300 15 15 0 0 0 50 50 50 300 µs 15 sec µs µs Chip Programming Time 44 44 44 sec Chip Erase Time (5) 256 256 256 sec Output Enable Hold Time (6) tOEH 10 10 10 ns tRP 500 500 500 ns RESET Pulse Width NOTES: 1. A21 must be held constant until WE or CS go high, whichever occurs first. 2. Guaranteed by design, but not tested. 3. Typical value for tWHWH1 is 7µs. 4. Typical value for tWHWH2 is 1sec. 5. Typical value for Chip Erase Time is 32sec. 6. For Toggle and Data Polling. AC CHARACTERISTICS FOR G4T AND H2 PACKAGES READ-ONLY OPERATIONS (VCC = 5.0V, TA = -55°C TO +125°C) Parameter Symbol -100 Min -120 Max 100 Min -150 Max 120 Min Unit Max Read Cycle Time tAVAV tRC 150 ns Address Access Time tAVQV tACC 100 120 150 Chip Select Access Time tELQV tCE 100 120 150 ns Output Enable to Output Valid tGLQV tOE 50 50 55 ns ns Chip Select High to Output High Z tEHQZ tDF 40 45 45 ns Output Enable High to Output High Z tGHQZ tDF 40 45 45 ns Output Hold from Addresses, CS or OE Change, whichever is First tAXQX tOH RST Low to Read Mode White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 0 tReady 0 20 6 0 20 ns 20 µs WF4M32-XXX5 White Electronic Designs AC CHARACTERISTICS FOR G4T A ND H2 P ACKAGES WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED (VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C) Parameter Symbol -100 Min -120 Max Min -150 Max Min Unit Max Write Cycle Time tAVAV tWC 100 120 150 ns Write Enable Setup Time t WLEL tWS 0 0 0 ns Chip Select Pulse Width tELEH tCP 45 50 50 ns Address Setup Time tAVEL tAS 0 0 0 ns Data Setup Time tDVEH tDS 45 50 50 ns Data Hold Time tEHDX tDH 15 15 15 ns Address Hold Time (1) t ELAX tAH 45 50 50 ns Chip Select Pulse Width High tEHEL tCPH 20 20 20 Duration of Byte Programming Operation (2) tWHWH1 Sector Erase Time (3) tWHWH2 Read Recovery Time tGHEL 300 15 0 15 0 Chip Programming Time 44 Chip Erase Time (4) tOEH 10 300 µs 15 sec 44 sec 256 sec 0 µs 44 256 Output Enable Hold Time (5) ns 300 256 10 10 ns NOTES: 1. A21 must be held constant until WE or CS go high, whichever occurs first. 2. Typical value for tWHWH1 is 7µs. 3. Typical value for tWHWH2 is 1sec. 4. Typical value for Chip Erase Time is 32sec. 5. For Toggle and Data Polling. AC TEST CONDITIONS FIG. 4 AC TEST CIRCUIT Parameter Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns 1.5 V Input and Output Reference Level Output Timing Reference Level 1.5 V Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75W. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. FIG. 5 RESET T IMING DIAGRAM RESET tRP tReady 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs FIG. 6 AC WAVEFORMS F OR READ OPERATIONS White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 8 WF4M32-XXX5 White Electronic Designs WF4M32-XXX5 FIG. 7 WRITE/ERASE/PROGRAM OPERATION, WE C ONTROLLED NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D 7 is the output of the complement of the data written to each chip. 4. D OUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. 9 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs FIG. 8 AC W AVEFORMS C HIP/SECTOR E RASE OPERATIONS NOTE: 1. SA is the sector address for Sector Erase. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 10 WF4M32-XXX5 WF4M32-XXX5 White Electronic Designs 11 D0-D6 Data WE OE CS D7 t CH tOEH tCE t OE tWHWH 1 or 2 D7 D0-D6 = Invalid D7 = Valid Data D0-D7 Valid Data t OH t DF High Z FIG. 9 AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED A LGORITHM OPERATIONS White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com White Electronic Designs FIG. 10 A LTERNATE CS C ONTROLLED PROGRAMMING O PERATION TIMINGS Notes: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D 7 is the output of the complement of the data written to each chip. 4. D OUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 12 WF4M32-XXX5 White Electronic Designs WF4M32-XXX5 PACKAGE 402: 66 PIN , PGA TYPE , CERAMIC HEX-IN-LINE PACKAGE, H IP (H2) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES P ACKAGE 502: 68 L EAD, CERAMIC QUAD F LAT PACK , LOW PROFILE CQFP (G4T) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETIC ALLY IN INCHES 13 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WF4M32-XXX5 White Electronic Designs P ACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T) The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 14 WF4M32-XXX5 White Electronic Designs ORDERING INFORMATION W F 4M32 - XXX X X 5 X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads V PP PROGRAMMING VOLTAGE 5=5V DEVICE GRADE: M =Military Screened I =Industrial C =Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: H 2 =Ceramic Hex In line Package, HIP (Package 402) G4T = 40mm Low Profile CQFP (Package 502) G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509) ACCESS TIME (ns) ORGANIZATION, 4M x 32 User configurable as 8M x 16 or 16M x 8 in HIP and G4T packages FLASH WHITE ELECTRONIC DESIGNS CORP. DEVICE TYPE SECTOR SIZE S P E E D PACKAGE SMD NO. 4M x 32 5V Flash Module 64KByte 150ns 66 pin HIP (H2) 5962-97612 01HXX* 4M x 32 5V Flash Module 64KByte 120ns 66 pin HIP (H2) 5962-97612 02HXX* 4M x 32 5V Flash Module 64KByte 100ns 66 pin HIP (H2) 5962-97612 03HXX* 4M x 32 5V Flash Module 64KByte 150ns 68 lead CQFP Low Profile (G4T) 5962-97612 01HXX* 4M x 32 5V Flash Module 64KByte 120ns 68 lead CQFP Low Profile (G4T) 5962-97612 02HXX* 4M x 32 5V Flash Module 64KByte 100ns 68 lead CQFP Low Profile (G4T) 5962-97612 03HXX* 4M x 32 5V Flash Module 64KByte 150ns 68 lead CQFP Low Profile (G2T) 5962-97612 01HXX* 4M x 32 5V Flash Module 64KByte 120ns 68 lead CQFP Low Profile (G2T) 5962-97612 02HXX* 4M x 32 5V Flash Module 64KByte 100ns 68 lead CQFP Low Profile (G2T) 5962-97612 03HXX* *Pending 15 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com