RENESAS HM62V16514LTTI-5SL

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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Technology Corporation product best suited to the customer's application; they do not convey any
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Corporation or a third party.
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circuit application examples contained in these materials.
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other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
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or system that is used under circumstances in which human life is potentially at stake. Please contact
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contained therein.
HM62V16514I Series
Wide Temperature Range Version
8 M SRAM (512-kword × 16-bit)
ADE-203-1280B (Z)
Rev. 1.0
Mar. 15, 2002
Description
The Hitachi HM62V16514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM62V16514I
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.
Features
•
•
•
•
•
•
•
•
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55 ns (Max)
Power dissipation:
 Active: 6.0 mW/MHz (Typ)
 Standby: 1.5 µW (Typ)
Completely static memory.
 No clock or timing strobe required
Equal access and cycle times
Common data input and output.
 Three state output
Battery backup operation.
Temperature range: –40 to +85°C
HM62V16514I Series
Ordering Information
Type No.
Access time
HM62V16514LTTI-5
55 ns
HM62V16514LTTI-5SL
55 ns
2
Package
400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DE)
HM62V162514I Series
Pin Arrangement
44-pin TSOP
A4
A3
A2
A1
A0
CS
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
A8
A9
A10
A11
A12
A13
(Top view)
Pin Description
Pin name
Function
A0 to A18
Address input
I/O0 to I/O15
Data input/output
CS
Chip select
WE
Write enable
OE
Output enable
LB
Lower byte select
UB
Upper byte select
VCC
Power supply
VSS
Ground
3
HM62V16514I Series
Block Diagram
LSB
A5
A6
A7
A4
A3
A8
A9
A10
A11
A12
MSB
A13
V CC
V SS
Row
decoder
I/O0
•
•
•
•
•
Memory matrix
2,048 x 2,048
Column I/O
•
•
Input
data
control
Column decoder
I/O15
LSB A15 A16 A17 A18 A0 A1 A2 A14MSB
•
•
CS
LB
UB
WE
OE
4
Control logic
•
•
HM62V162514I Series
Operation Table
CS
WE
OE
UB
LB
I/O0 to I/O7
I/O8 to I/O15
Operation
H
×
×
×
×
High-Z
High-Z
Standby
×
×
×
H
H
High-Z
High-Z
Standby
L
H
L
L
L
Dout
Dout
Read
L
H
L
H
L
Dout
High-Z
Lower byte read
L
H
L
L
H
High-Z
Dout
Upper byte read
L
L
×
L
L
Din
Din
Write
L
L
×
H
L
Din
High-Z
Lower byte write
L
L
×
L
H
High-Z
Din
Upper byte write
L
H
H
×
×
High-Z
High-Z
Output disable
Note: H: V IH, L: VIL, ×: VIH or VIL
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V SS
VCC
–0.5 to + 4.6
1
V
2
Terminal voltage on any pin relative to V SS
VT
–0.5* to V CC + 0.3*
V
Power dissipation
PT
1.0
W
Storage temperature range
Tstg
–55 to +125
°C
Storage temperature range under bias
Tbias
–40 to +85
°C
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.0
3.6
V
VSS
0
0
0
V
Input high voltage
VIH
2.2
—
VCC + 0.3
V
Input low voltage
VIL
–0.3
—
0.6
V
Ambient temperature range
Ta
–40
—
85
°C
Note:
Note
1
1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
5
HM62V16514I Series
DC Characteristics
Parameter
Symbol Min
Typ* 1 Max
Unit
Test conditions
Input leakage current
|ILI|
—
—
1
µA
Vin = VSS to V CC
Output leakage current
|ILO |
—
—
1
µA
CS = VIH or OE = VIH or
WE = VIL or, LB = UB =VIH ,
VI/O = VSS to V CC
Operating current
I CC
—
—
20
mA
CS = VIL, Others = VIH/VIL,
I I/O = 0 mA
Average operating current
I CC1
—
16
30
mA
Min. cycle, duty = 100%,
I I/O = 0 mA, CS = VIL,
Others = VIH/VIL
I CC2
—
2
5
mA
Cycle time = 1 µs, duty = 100%,
I I/O = 0 mA, CS ≤ 0.2 V,
VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V
—
0.1
0.3
mA
CS = VIH
2
—
0.5
25
µA
0 V ≤ Vin
(1) CS ≥ V CC – 0.2 V or
(2) LB = UB ≥ V CC – 0.2 V,
CS ≤ 0.2 V
I SB1*3
—
0.5
10
µA
Output high voltage
VOH
2.2
—
—
V
I OH = –1 mA
Output low voltage
VOL
—
—
0.4
V
I OL = 2 mA
Standby current
I SB
Standby current
I SB1*
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed.
2. This characteristic is guaranteed only for L version.
3. This characteristic is guaranteed only for L-SL version.
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
—
—
8
pF
Vin = 0 V
1
Input/output capacitance
CI/O
—
—
10
pF
VI/O = 0 V
1
Note:
6
1. This parameter is sampled and not 100% tested.
HM62V162514I Series
AC Characteristics (Ta = –40 to +85°C, VCC = 2.7 V to 3.6 V, unless otherwise noted.)
Test Conditions
•
•
•
•
Input pulse levels: VIL = 0.4 V, VIH = 2.2 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
VTM
R1
Dout
R1 = 3070 Ω
30pF
R2
R2 = 3150 Ω
VTM = 2.8 V
7
HM62V16514I Series
Read Cycle
HM62V16514I
-5
Parameter
Symbol
Min
Max
Unit
Read cycle time
t RC
55
—
ns
Address access time
t AA
—
55
ns
Chip select access time
t ACS
—
55
ns
Output enable to output valid
t OE
—
35
ns
Output hold from address change
t OH
10
—
ns
LB, UB access time
t BA
—
55
ns
Chip select to output in low-Z
t CLZ
10
—
ns
2, 3
LB, UB enable to low-z
t BLZ
5
—
ns
2, 3
Output enable to output in low-Z
t OLZ
5
—
ns
2, 3
Chip deselect to output in high-Z
t CHZ
0
20
ns
1, 2, 3
LB, UB disable to high-Z
t BHZ
0
20
ns
1, 2, 3
Output disable to output in high-Z
t OHZ
0
20
ns
1, 2, 3
8
Notes
HM62V162514I Series
Write Cycle
HM62V16514I
-5
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
t WC
55
—
ns
Address valid to end of write
t AW
50
—
ns
Chip selection to end of write
t CW
50
—
ns
5
Write pulse width
t WP
40
—
ns
4
LB, UB valid to end of write
t BW
50
—
ns
Address setup time
t AS
0
—
ns
6
Write recovery time
t WR
0
—
ns
7
Data to write time overlap
t DW
25
—
ns
Data hold from write time
t DH
0
—
ns
Output active from end of write
t OW
5
—
ns
2
Output disable to output in High-Z
t OHZ
0
20
ns
1, 2
Write to output in high-Z
t WHZ
0
20
ns
1, 2
Notes: 1. t CHZ, tOHZ , t WHZ and tBHZ are defined as the time at which the outputs achieve the open circuit
conditions and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t HZ max is less than tLZ min both for a given device
and from device to device.
4. A write occures during the overlap of a low CS, a low WE and a low LB or a low UB. A write begins
at the latest transition among CS going low, WE going low and LB going low or UB going low. A
write ends at the earliest transition among CS going high, WE going high and LB going high or UB
going high. t WP is measured from the beginning of write to the end of write.
5. t CW is measured from the later of CS going low to the end of write.
6. t AS is measured from the address valid to the beginning of write.
7. t WR is measured from the earliest of CS or WE going high to the end of write cycle.
9
HM62V16514I Series
Timing Waveform
Read Cycle
t RC
Address
Valid address
tAA
tACS
CS
tCLZ*2, 3
tCHZ*1, 2, 3
tBHZ*1, 2, 3
tBA
LB, UB
tBLZ*2, 3
tOHZ*1, 2, 3
tOE
OE
tOLZ*2, 3
Dout
10
High impedance
tOH
Valid data
HM62V162514I Series
Write Cycle (1) (WE Clock)
tWC
Valid address
Address
tWR*7
tCW*5
CS
tBW
LB, UB
tAW
tWP*4
WE
tAS*6
tDW
tDH
Valid data
Din
tWHZ*1, 2
tOW*2
High impedance
Dout
11
HM62V16514I Series
Write Cycle (2) (CS Clock, OE = VIH)
tWC
Valid address
Address
tAW
tAS*6
tWR*7
tCW*5
CS
tBW
LB, UB
tWP*4
WE
tDW
Valid data
Din
High impedance
Dout
12
tDH
HM62V162514I Series
Write Cycle (3) (LB, UB Clock, OE = VIH)
tWC
Valid address
Address
tAW
tCW*5
tWR*7
CS
tAS*6
tBW
LB, UB
tWP*4
WE
tDW
tDH
Valid data
Din
High impedance
Dout
13
HM62V16514I Series
Low VCC Data Retention Characteristics (Ta = –40 to +85°C)
Parameter
Symbol
Min
Typ* 4
Max
Unit
Test conditions*3
VCC for data retention
VDR
2.0
—
3.6
V
Vin ≥ 0V
(1) CS ≥ V CC – 0.2 V or
(2) LB = UB ≥ V CC – 0.2 V
CS ≤ 0.2 V
Data retention current
I CCDR*1
—
0.5
25
µA
VCC = 3.0 V, Vin ≥ 0V
(1) CS ≥ V CC – 0.2 V or
(2) LB = UB ≥ V CC – 0.2 V
CS ≤ 0.2 V
I CCDR*2
—
0.5
10
µA
—
—
ns
—
—
ns
Chip deselect to data retention time t CDR
Operation recovery time
tR
0
t RC*
5
See retention waveform
Notes: 1. This characteristic is guaranteed only for L version.
2. This characteristic is guaranteed only for L-SL version.
3. CS controls address buffer, WE buffer, OE buffer, LB, UB buffer and Din buffer. If CS controls data
retention mode, Vin levels (address, WE, OE, LB, UB, I/O) can be in the high impedance state. If
LB, UB controls data retention mode, LB, UB must be LB = UB ≥ V CC – 0.2 V, CS must be CS ≤ 0.2
V. The other input levels (address, WE, OE, I/O) can be in the high impedance state.
4. Typical values are at VCC = 3.0 V, Ta = +25˚C and not guaranteed.
5. t RC = read cycle time.
14
HM62V162514I Series
Low V CC Data Retention Timing Waveform (1) (CS Controlled)
t CDR
Data retention mode
tR
V CC
2.7 V
2.2 V
V DR
CS
0V
CS ≥ VCC – 0.2 V
Low V CC Data Retention Timing Waveform (2) (LB, UB Controlled)
t CDR
Data retention mode
tR
V CC
2.7 V
2.2 V
V DR
LB, UB
0V
LB, UB ≥ VCC – 0.2 V
15
HM62V16514I Series
Package Dimensions
HM62V16514LTTI Series (TTP-44DE)
As of July, 2001
Unit: mm
18.41
18.81 Max
23
10.16
44
0.80
*0.27 ± 0.07
0.25 ± 0.05
22
0.80
0.13 M
11.76 ± 0.20
1.005 Max
*Dimension including the plating thickness
Base material dimension
16
0.13 ± 0.05
0.10
*0.145 ± 0.05
0.125 ± 0.04
1.20 Max
0˚ – 5˚
0.50 ± 0.10
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TTP-44DE
—
—
0.43 g
0.68
1
HM62V162514I Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual
property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the
equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage
due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen
Postfach 201,D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
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Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://semiconductor.hitachi.com.sg
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
17