RENESAS HAT2204C-EL-E

HAT2204C
Silicon N Channel MOS FET
Power Switching
REJ03G0448-0500
Rev.5.00
May 10, 2007
Features
• Low on-resistance
RDS(on) = 26m Ω typ.(at VGS = 4.5 V)
• Low drive current
• High density mounting
• 1.8 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Index band
4
5
6
2 3 4 5
DDD D
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
6
G
1
2
3
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
Pch Note2
Tch
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 1 of 7
Ratings
12
±8
3.5
14
3.5
900
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
HAT2204C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Min
12
±8
—
—
0.3
Typ
—
Max
—
Unit
V
—
—
—
±10
1
1.2
µA
µA
V
Test conditions
ID = 10 mA, VGS = 0
IG = ±10 µA, VDS = 0
VGS = ±6.4 V, VDS = 0
VDS = 12 V, VGS = 0
VDS = 10 V, ID = 1 mA
Drain to Source on state resistance
RDS(on)
—
26
34
mΩ
ID = 1.8 A, VGS = 4.5 VNote3
RDS(on)
—
34
44
mΩ
ID = 1.8 A, VGS = 2.5 VNote3
RDS(on)
45
13
770
115
50
10
9.5
36
5
69
—
—
—
—
—
—
—
—
mΩ
S
pF
pF
pF
ns
ns
ns
ns
ID = 1.8 A, VGS = 1.8 VNote3
ID = 1.8 A, VDS = 10 V Note3
9
1.5
2
0.8
—
—
—
1.1
nC
nC
nC
V
VDD = 10 V
VGS = 4.5 V
ID = 3.5 A
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
—
8.5
—
—
—
—
—
—
—
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body - Drain diode forward voltage
Qg
Qgs
Qgd
VDF
—
—
—
—
Notes: 3. Pulse test
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 2 of 7
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 1.8 A, VGS = 4.5 V
VDS = 10 V, RL = 5.6 Ω,
Rg = 4.7 Ω
IF = 3.5 A, VGS = 0 Note3
HAT2204C
Main Characteristics
Power vs.Temperature Dreating
ID (A)
1
150
16
0.01 0.03 0.1 0.3
1
3
VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
20
Pulse Test
25°C
4.5 V
2.5 V
1.8 V
16
−25°C
Tc = 75 °C
12
1.6 V
8
1.4 V
4
8
4
VDS = 10 V
Pulse Test
VGS = 1.2 V
2
4
6
Drain to Source Voltage
8
10
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
160
Drain to Source Saturation Voltage
VDS(on) (mV)
10 30 100
Drain to Source Voltage
12
0
s
RDS(on)
Ta (°C)
ID (A)
20
m
Operation in this
area is limited by
0.1
200
m
s
n
io
100
10
t
ra
0.3
0.03
50
1
=
pe
O
0.4
PW
3
Drain Current
0.8
10 µs
10
Drain Current
Pch (W)
1.2
When using the FR4 board.
100 µs
30
board.(FR4 40 x 40 x 1.6 mm)
C
D
Power Dissipation
When using the glass epoxy
Ambient Temperature
ID (A)
Ta = 25°C,1 shot pulse
Test condition
0
Drain Vurrent
Maximum Safe Operation Area
100
1.6
0
1000
1
2
3
Gate to Source Voltage
4
5
VGS (V)
Drain to Source On State Resistance
vs. Drain Current
Pulse Test
Pulse Test
120
ID = 3.5 A
80
100
40
0
2
4
6
Gate to Source Voltage
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 3 of 7
VGS = 1.8 V
1.8 A
2.5 V
1A
4.5 V
8
VGS (V)
10
10
0.1
1
Drain Current
10
ID (A)
100
HAT2204C
Forward Transfer Admittance |yfs| (S)
Static Drain to Source On State Resistance
vs. Temperature
100
80
1.8 A
ID = 3.5 A
60
VGS = 1.8 V
1A
40
2.5 V
1, 1.8 A
20
4.5 V
0
−25
3.5 A
1, 1.8, 3.5 A
Pulse Test
0
25
50
75
100 125 150
Case Temperature
100
30
Forward Transfer Admittance vs.
Drain Current
Tc = −25°C
25°C
10
75°C
3
1
0.3
0.1
0.1
VDS = 10 V
Pulse Test
0.3
VDD = 12 V
10 V
5V
2
VGS (V)
0
20
4
8
12
16
Gate Charge Qg (nC)
VGS = 0
f = 1 MHz
1000
Ciss
300
Coss
100
Crss
30
10
3
1
0
4
2
6
8
Drain to Source Voltage
Reverse Drain Current vs.
Source to Drain Voltage
1000
10
12
VDS (V)
Switching Characteristics
5V
12
Switching Time t (ns)
IDR (A)
4
VDD
16
100
ID (A)
3000
Capacitance C (pF)
VDD = 12 V
10 V
5V
20
20
Reverse Drain Current
6
VGS
0
30
10
10000
8
ID = 3.5 A
Gate to Source Voltage
Drain to Source Voltage
VDS (V)
40
10
3
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
30
1
Drain Current
Tc (°C)
VGS = 0 , -5 V
8
tr
100
td(off)
td(on)
10
tf
4
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 4 of 7
1.6
2.0
VSD (V)
1
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
HAT2204C
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
4.7 Ω
Vin
4.5 V
VDS
= 10 V
Vout
10%
10%
90%
td(on)
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 5 of 7
tr
10%
90%
td(off)
tf
HAT2204C
Package Dimensions
JEITA Package Code

Package Name
CMFPAK-6
RENESAS Code
PWSF0006JA-A
Previous Code
CMFPAK-6 / CMFPAK-6V
MASS[Typ.]
0.0065g
D
A
e
c
E
A
HE
A
x M
LP
L
S
b
A
e
A2
Reference
Symbol
A
A1
y S
S
e1
b
l1
b2
c
Pattern of terminal position areas
A-A Section
A
A1
A2
b
c
D
E
e
HE
L
LP
x
y
b2
e1
l1
Dimension in Millimeters
Min
0.7
0
0.7
0.15
0.1
1.9
1.6
2.05
0.1
0.15
Nom
0.2
0.15
2.0
1.7
0.65
2.1
0.2
Max
0.8
0.01
0.79
0.3
0.25
2.1
1.8
2.15
0.3
0.45
0.05
0.05
0.35
1.65
0.5
Ordering Information
Part Name
HAT2204C-EL-E
Note:
Quantity
3000 pcs
Shipping Container
Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 6 of 7
Sales Strategic Planning Div.
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Colophon .7.0