HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 6 G 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID (pulse) IDR Pch Note2 Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 1 of 7 Ratings 12 ±8 3.5 14 3.5 900 150 –55 to +150 Unit V V A A A mW °C °C HAT2204C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 12 ±8 — — 0.3 Typ — Max — Unit V — — — ±10 1 1.2 µA µA V Test conditions ID = 10 mA, VGS = 0 IG = ±10 µA, VDS = 0 VGS = ±6.4 V, VDS = 0 VDS = 12 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to Source on state resistance RDS(on) — 26 34 mΩ ID = 1.8 A, VGS = 4.5 VNote3 RDS(on) — 34 44 mΩ ID = 1.8 A, VGS = 2.5 VNote3 RDS(on) 45 13 770 115 50 10 9.5 36 5 69 — — — — — — — — mΩ S pF pF pF ns ns ns ns ID = 1.8 A, VGS = 1.8 VNote3 ID = 1.8 A, VDS = 10 V Note3 9 1.5 2 0.8 — — — 1.1 nC nC nC V VDD = 10 V VGS = 4.5 V ID = 3.5 A Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time |yfs| Ciss Coss Crss td(on) tr td(off) tf — 8.5 — — — — — — — Total Gate charge Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Qg Qgs Qgd VDF — — — — Notes: 3. Pulse test REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 2 of 7 VDS = 10 V VGS = 0 f = 1 MHz ID = 1.8 A, VGS = 4.5 V VDS = 10 V, RL = 5.6 Ω, Rg = 4.7 Ω IF = 3.5 A, VGS = 0 Note3 HAT2204C Main Characteristics Power vs.Temperature Dreating ID (A) 1 150 16 0.01 0.03 0.1 0.3 1 3 VDS (V) Typical Transfer Characteristics Typical Output Characteristics 20 Pulse Test 25°C 4.5 V 2.5 V 1.8 V 16 −25°C Tc = 75 °C 12 1.6 V 8 1.4 V 4 8 4 VDS = 10 V Pulse Test VGS = 1.2 V 2 4 6 Drain to Source Voltage 8 10 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 160 Drain to Source Saturation Voltage VDS(on) (mV) 10 30 100 Drain to Source Voltage 12 0 s RDS(on) Ta (°C) ID (A) 20 m Operation in this area is limited by 0.1 200 m s n io 100 10 t ra 0.3 0.03 50 1 = pe O 0.4 PW 3 Drain Current 0.8 10 µs 10 Drain Current Pch (W) 1.2 When using the FR4 board. 100 µs 30 board.(FR4 40 x 40 x 1.6 mm) C D Power Dissipation When using the glass epoxy Ambient Temperature ID (A) Ta = 25°C,1 shot pulse Test condition 0 Drain Vurrent Maximum Safe Operation Area 100 1.6 0 1000 1 2 3 Gate to Source Voltage 4 5 VGS (V) Drain to Source On State Resistance vs. Drain Current Pulse Test Pulse Test 120 ID = 3.5 A 80 100 40 0 2 4 6 Gate to Source Voltage REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 3 of 7 VGS = 1.8 V 1.8 A 2.5 V 1A 4.5 V 8 VGS (V) 10 10 0.1 1 Drain Current 10 ID (A) 100 HAT2204C Forward Transfer Admittance |yfs| (S) Static Drain to Source On State Resistance vs. Temperature 100 80 1.8 A ID = 3.5 A 60 VGS = 1.8 V 1A 40 2.5 V 1, 1.8 A 20 4.5 V 0 −25 3.5 A 1, 1.8, 3.5 A Pulse Test 0 25 50 75 100 125 150 Case Temperature 100 30 Forward Transfer Admittance vs. Drain Current Tc = −25°C 25°C 10 75°C 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 VDD = 12 V 10 V 5V 2 VGS (V) 0 20 4 8 12 16 Gate Charge Qg (nC) VGS = 0 f = 1 MHz 1000 Ciss 300 Coss 100 Crss 30 10 3 1 0 4 2 6 8 Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 1000 10 12 VDS (V) Switching Characteristics 5V 12 Switching Time t (ns) IDR (A) 4 VDD 16 100 ID (A) 3000 Capacitance C (pF) VDD = 12 V 10 V 5V 20 20 Reverse Drain Current 6 VGS 0 30 10 10000 8 ID = 3.5 A Gate to Source Voltage Drain to Source Voltage VDS (V) 40 10 3 Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics 30 1 Drain Current Tc (°C) VGS = 0 , -5 V 8 tr 100 td(off) td(on) 10 tf 4 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 4 of 7 1.6 2.0 VSD (V) 1 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2204C Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 4.7 Ω Vin 4.5 V VDS = 10 V Vout 10% 10% 90% td(on) REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 5 of 7 tr 10% 90% td(off) tf HAT2204C Package Dimensions JEITA Package Code Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L S b A e A2 Reference Symbol A A1 y S S e1 b l1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b2 e1 l1 Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Part Name HAT2204C-EL-E Note: Quantity 3000 pcs Shipping Container Taping For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 6 of 7 Sales Strategic Planning Div. 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