RJJ0601JPN Silicon P Channel MOS FET High Speed Power Switching REJ03G1602-0100 Rev.1.00 Nov 21, 2007 Features • Low on-resistance RDS(on) = 8.2 mΩ typ. • Capable of 4.5 V gate drive • High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 2 1 1. Gate 2. Drain (Flange) 3. Source G 1 2 3 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS VGSS Value –60 ±20 Unit V V ID ID (pulse) Note1 IDR –90 –360 –90 A A A –40 137 A mJ 90 150 –55 to +150 W °C °C 3 Avalanche current Avalanche energy IAPNote EARNote3 Channel dissipation Channel temperature Storage temperature PchNote Tch Tstg 2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1602-0100 Page 1 of 6 Rev.1.00 Nov 21, 2007 RJJ0601JPN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) trr 4. Pulse test REJ03G1602-0100 Page 2 of 6 Rev.1.00 Nov 21, 2007 Min –60 ±20 — — –1.0 — — — — — — — — — — — — Typ — — — — — 8.2 10 8800 950 600 150 25 23 25 30 290 135 Max — — –10 ±10 –2.5 10 15 — — — — — — — — — — Unit V V µA µA V mΩ mΩ pF pF pF nC nC nC ns ns ns ns — — –0.96 45 — — V ns Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16 V, VDS = 0 VDS = –10 V, ID = –1 mANote4 ID = –45 A, VGS= –10 VNote4 ID = –45 A, VGS = –4.5 VNote4 VDS = –10 V, VGS = 0 f = 1 MHz VDD = –25 V, VGS = –10 V, ID = –90 A VGS = –10 V, ID= –45 A, VDD = –30 V, RG = 4.7 Ω IF = –90 A, VGS = 0 IF = –90 A, VGS = 0, diF/dt = 100 A/µs RJJ0601JPN Main Characteristics Maximum Safe Operation Area 80 −100 1s s( m ra ho Operation in this area is limited by RDS (on) t) (P −1 n tio W ≤1 −0.1 0 s) 25 50 75 100 Case Temperature 125 −0.01 −0.1 150 Tc (°C) −1000 −4.5 V −10 V −10 −3.0 V −50 VGS = −2.7 V −100 VDS = −10 V Pulse Test −10 −1 −0.1 Tc = 150°C −0.01 25°C −40°C −0.001 Pulse Test −5 0 −100 Typical Transfer Characteristics Drain Current ID (A) −100 −1 Drain to Source Voltage VDS (V) Typical Output Characteristics Drain Current ID (A) s m −10 Ta = 25°C 1 shot Pulse 0 −10 −0.0001 0 −1 −2 −3 −4 −5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 100 25 Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source on State Resistance RDS (on) (mΩ) µs 10 20 0 e Op 40 10 = 60 10 µs PW Drain Current ID (A) −1000 DC Channel Dissipation 100 1 Pch (W) Power vs. Temperature Derating Pulse Test 10 VGS = −4.5 V −10 V 1 −1 −10 −100 Drain Current ID (A) REJ03G1602-0100 Page 3 of 6 Rev.1.00 Nov 21, 2007 −1000 ID = −45 A 20 15 VGS = −4.5 V 10 5 −10 V Pulse Test 0 −50 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RJJ0601JPN Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) 100000 Capacitance C (pF) VGS = 0 f = 1 MHz Ciss 10000 1000 Coss Crss 100 −0 −10 −20 −30 −50 –4 –10 –8 –12 –20 VDD = –25 V –10 V –5 V VDS VGS –30 ID = –90 A –16 0 50 100 –40 200 150 Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Gate Charge Qg (nC) Pulse Test –10 V –50 VGS = 0 V 0 0 VDD = –5 V –10 V –25 V Drain to Source Voltage VDS (V) –100 Reverse Drain Current IDR (A) −40 0 –0.4 –0.8 –1.2 –1.6 –2.0 250 L = 100 µH VDD = –25 V duty < 0.1 % Rg ≥ 50 Ω 200 150 100 50 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Avalanche Test Circuit Avalanche Waveform VDS Monitor L EAR = 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS D. U. T VDD IAP VDS Vin –15 V 50 Ω ID 0 REJ03G1602-0100 Page 4 of 6 Rev.1.00 Nov 21, 2007 VDD Gate to Source Voltage VGS (V) Dynamic Input Characteristics Normalized Transient Thermal Impedance γs (t) RJJ0601JPN Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 0.05 θch - c(t) = γs (t) x θch - c θch - c = 1.39°C/W, Tc = 25°C 0.02 0.01 0.01 PDM D= lse t ho PW T PW pu T 1s 0.001 0.01 0.1 1 10 100 1000 Pulse Width PW (mS) Switching Time Test Circuit Vout Monitor Vin Monitor Switching Time Waveform Vin 10% D.U.T. Rg RL VDD = –30 V Vin –10 V REJ03G1602-0100 Page 5 of 6 90% Rev.1.00 Nov 21, 2007 90% 90% Vout 10% td(on) tr 10% td(off) tf RJJ0601JPN Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 1.5 Max 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part No. RJJ0601JPN-00-02 REJ03G1602-0100 Page 6 of 6 Quantity 500 pcs Rev.1.00 Nov 21, 2007 Shipping Container Box (Sack) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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