RENESAS 2SK3378ENTL-E

2SK3378
Silicon N Channel MOS FET
High Speed Switching
REJ03G1599-0200
(Previous: ADE-208-805)
Rev.2.00
Oct 23, 2007
Features
• Low on-resistance
RDS = 2.7 Ω typ. (VGS = 10 V, ID = 50 mA)
RDS = 4.7 Ω typ. (VGS = 4 V, ID = 20 mA)
• 4 V gate drive device.
• Small package (CMPAK)
Outline
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK R )
D
3
1
1. Source
2. Gate
3. Drain
G
2
S
Note:
Marking is EN
*CMPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Rating
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note 2
Tch
Ratings
30
±20
100
400
100
300
150
Unit
V
V
mA
mA
mA
mW
°C
Tstg
–55 to +150
°C
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 1 of 6
2SK3378
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Notes: 3. Pulse test
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 2 of 6
Min
30
±20
—
—
1.3
—
—
55
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.7
4.7
85
3
8
1
100
330
1150
940
Max
—
—
±5
1
2.3
3.5
7.0
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 10 µA, VDS = 5 V
ID = 50 mA, VGS = 10 V Note 3
ID = 20 mA, VGS = 4 V Note 3
ID = 50 mA, VDS =10 V Note 3
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 50 mA, VGS = 10 V
RL = 200 Ω
2SK3378
Main Characteristics
Maximum Safe Operation Area
400
5
Drain Current ID (A)
Channel Dissipation
*Pch (mW)
Power vs. Temperature Derating
300
200
100
0
50
100
150
200
2
1.0
10 µs
100 µs
1 ms
0.5
0.2
0.1
0.05
DC
0.02
0.01
Operation in
this area is limited
by RDS(on)
0.005
0.002
0.001 Ta = 25°C
0.0005
0.05 0.1 0.2 0.5
Ambient Temperature Ta (°C)
Op
1
2
5
PW = 10 ms
(1 shot)
er
at
ion
10 20
50
Drain to Source Voltage VDS (V)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Output Characteristics
0.5
8V
7V
Typical Transfer Characteristics
500
6V
Drain Current ID (mA)
Pulse Test
5V
0.3
0.2
4V
0.1
VGS = 3V
Drain to Source Saturation Voltage VDS (on) (V)
0
2
4
6
8
25°C
Tc = –25°C
300
200
100
0
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
Pulse Test
ID = 100mA
1.6
1.2
0.8
50 mA
0.4
10 mA
0
400
VDS = 10 V
Pulse Test
2
4
6
8
10
Gate to Source Voltage VGS (V)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 3 of 6
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain Current ID (A)
75°C
0.4
50
Pulse Test
20
VGS = 4V
10
5
10 V
2
1.0
0.5
0.1
0.2
0.5
Drain Current ID (A)
1.0
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
10
ID = 100 m A
8
50 mA
VGS = 4 V
6
10 mA
4
2
10 V
10 mA,50 mA,100 m A
Pulse Test
0
–40
0
40
80
120
160
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK3378
0.2
Tc = –25°C
25°C
0.1
75°C
0.05
0.02
0.01
0.005
0.01
0.02
0.05
0.1
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
10000
5000
5
Coss
Switching Time t (ns)
Capacitance C (pF)
VDS = 10 V
Pulse Test
Case Temperature TC (°C)
10
Ciss
2
1.0
Crss
0.5
0.2
VGS = 0
f = 1 MHz
2000
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
VGS = 0, –5V
0.3
0.2
10 V
0.1
5V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 4 of 6
td(off)
1000
500
tf
tr
200
td(on)
100
50
20
10
0.1
Reverse Drain Current IDR (A)
0.5
0.01
VGS = 10 V, VDD = 10 V
PW = 5 µs, duty ≤ 1 %
0.02
0.05
Drain Current ID (A)
0.1
2SK3378
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
RL
Vin
Vout
Vin
10 V
50 Ω
VDD
= 10 V
10%
10%
90%
td(on)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 5 of 6
10%
tr
90%
td(off)
tf
2SK3378
Package Dimensions
Package Name
CMPAK
JEITA Package Code
SC-70
D
RENESAS Code
PTSP0003ZA-A
Previous Code
CMPAK / CMPAKV
MASS[Typ.]
0.006g
A
e
Q
c
E
HE
LP
L
A
A
x M
L1
S
A
A3
b
e
A2
Reference
Symbol
A
A1
S
e1
b
l1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
l1
Q
Ordering Information
Part No.
2SK3378ENTL-E
2SK3378ENTR-E
Quantity
3000 pcs
3000 pcs
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 6 of 6
Shipping Container
Taping
Taping
Dimension in Millimeters
Min
0.8
0
0.8
0.25
0.1
1.8
1.15
1.8
0.3
0.1
0.2
Nom
0.9
0.25
0.3
0.16
2.0
1.25
0.65
2.1
Max
1.1
0.1
1.0
0.4
0.26
2.2
1.35
2.4
0.7
0.5
0.6
0.05
0.45
1.5
0.9
0.2
Sales Strategic Planning Div.
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Colophon .7.0