2SK3378 Silicon N Channel MOS FET High Speed Switching REJ03G1599-0200 (Previous: ADE-208-805) Rev.2.00 Oct 23, 2007 Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V, ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V, ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK) Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) D 3 1 1. Source 2. Gate 3. Drain G 2 S Note: Marking is EN *CMPAK is a trademark of Renesas Technology Corp. Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note 2 Tch Ratings 30 ±20 100 400 100 300 150 Unit V V mA mA mA mW °C Tstg –55 to +150 °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 1 of 6 2SK3378 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Notes: 3. Pulse test REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 2 of 6 Min 30 ±20 — — 1.3 — — 55 — — — — — — — Typ — — — — — 2.7 4.7 85 3 8 1 100 330 1150 940 Max — — ±5 1 2.3 3.5 7.0 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions ID = 100 µA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 10 µA, VDS = 5 V ID = 50 mA, VGS = 10 V Note 3 ID = 20 mA, VGS = 4 V Note 3 ID = 50 mA, VDS =10 V Note 3 VDS = 10 V VGS = 0 f = 1 MHz ID = 50 mA, VGS = 10 V RL = 200 Ω 2SK3378 Main Characteristics Maximum Safe Operation Area 400 5 Drain Current ID (A) Channel Dissipation *Pch (mW) Power vs. Temperature Derating 300 200 100 0 50 100 150 200 2 1.0 10 µs 100 µs 1 ms 0.5 0.2 0.1 0.05 DC 0.02 0.01 Operation in this area is limited by RDS(on) 0.005 0.002 0.001 Ta = 25°C 0.0005 0.05 0.1 0.2 0.5 Ambient Temperature Ta (°C) Op 1 2 5 PW = 10 ms (1 shot) er at ion 10 20 50 Drain to Source Voltage VDS (V) *Value on the alumina ceramic boad.(12.5x20x0.7mm) Typical Output Characteristics 0.5 8V 7V Typical Transfer Characteristics 500 6V Drain Current ID (mA) Pulse Test 5V 0.3 0.2 4V 0.1 VGS = 3V Drain to Source Saturation Voltage VDS (on) (V) 0 2 4 6 8 25°C Tc = –25°C 300 200 100 0 10 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2.0 Pulse Test ID = 100mA 1.6 1.2 0.8 50 mA 0.4 10 mA 0 400 VDS = 10 V Pulse Test 2 4 6 8 10 Gate to Source Voltage VGS (V) REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) 75°C 0.4 50 Pulse Test 20 VGS = 4V 10 5 10 V 2 1.0 0.5 0.1 0.2 0.5 Drain Current ID (A) 1.0 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 10 ID = 100 m A 8 50 mA VGS = 4 V 6 10 mA 4 2 10 V 10 mA,50 mA,100 m A Pulse Test 0 –40 0 40 80 120 160 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK3378 0.2 Tc = –25°C 25°C 0.1 75°C 0.05 0.02 0.01 0.005 0.01 0.02 0.05 0.1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 10000 5000 5 Coss Switching Time t (ns) Capacitance C (pF) VDS = 10 V Pulse Test Case Temperature TC (°C) 10 Ciss 2 1.0 Crss 0.5 0.2 VGS = 0 f = 1 MHz 2000 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 0.5 0.4 VGS = 0, –5V 0.3 0.2 10 V 0.1 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 4 of 6 td(off) 1000 500 tf tr 200 td(on) 100 50 20 10 0.1 Reverse Drain Current IDR (A) 0.5 0.01 VGS = 10 V, VDD = 10 V PW = 5 µs, duty ≤ 1 % 0.02 0.05 Drain Current ID (A) 0.1 2SK3378 Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V 50 Ω VDD = 10 V 10% 10% 90% td(on) REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 5 of 6 10% tr 90% td(off) tf 2SK3378 Package Dimensions Package Name CMPAK JEITA Package Code SC-70 D RENESAS Code PTSP0003ZA-A Previous Code CMPAK / CMPAKV MASS[Typ.] 0.006g A e Q c E HE LP L A A x M L1 S A A3 b e A2 Reference Symbol A A1 S e1 b l1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 l1 Q Ordering Information Part No. 2SK3378ENTL-E 2SK3378ENTR-E Quantity 3000 pcs 3000 pcs REJ03G1599-0200 Rev.2.00 Oct 23, 2007 Page 6 of 6 Shipping Container Taping Taping Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.3 0.16 2.0 1.25 0.65 2.1 Max 1.1 0.1 1.0 0.4 0.26 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.45 1.5 0.9 0.2 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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