RENESAS 2SK2569

2SK2569
Silicon N Channel MOS FET
REJ03G1018-0300
Rev.3.00
Dec 27, 2006
Application
High speed power switching
Features
•
•
•
•
Low on-resistance.
RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA)
2.5 V gate drive device.
Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
D
3
1
G
1. Source
2. Gate
3. Drain
2
S
Note:
Marking is "ZN–"
Rev.3.00 Dec 27, 2006 page 1 of 6
2SK2569
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
Symbol
VDSS
VGSS
ID
ID(pulse)*1
Pch*2
Tch
Tstg
Ratings
50
±20
0.2
0.4
150
150
–55 to +150
Unit
V
V
A
A
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Symbol
V(BR)DSS
V(BR)GSS
Min
50
±20
Typ
—
—
Max
—
—
Unit
V
V
IDSS
IGSS
—
—
—
—
1.0
±2.0
µA
µA
VDS = 40 V, VGS = 0
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
resistance
RDS(on)1
0.5
—
—
2.0
1.5
2.6
V
Ω
ID = 10 µA, VDS = 5 V
ID = 100 mA, VGS = 4 V*2
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note: 2. Pulse test
RDS(on)2
—
3.1
5.0
Ω
ID = 40 mA, VGS = 2.5 V*2
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
0.13
—
—
—
—
—
—
—
0.23
14.0
17.2
1.73
40
86
1120
430
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
ID = 100 mA, VDS = 10 V
Zero gate voltage drain current
Gate to source leak current
Rev.3.00 Dec 27, 2006 page 2 of 6
Test Conditions
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 10 V, VGS = 0,
f = 1 MHz
VGS = 10 V, ID = 100 mA,
RL = 300 Ω
2SK2569
Main Characteristics
1
200
1 ms
n
50
100
150
Case Temperature
0.001 Ta = 25°C
0.1 0.3
1
200
Tc (°C)
2V
0.08
0.04
Pulse Test
2
0.16
0.12
25°C
Tc = 75°C
–25°C
0.08
0.04
VDS = 5 V
Pulse Test
VGS = 1.5 V
4
6
8
0
10
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.4
ID = 0.2 A
0.3
0.2
0.1 A
0.1
0
100
2.3 V
2.5 V
0.12
0
30
0.20
Drain Current ID (A)
0.16
10
Typical Transfer Characteristics
10 V 4 V
0.05 A
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.3.00 Dec 27, 2006 page 3 of 6
Static Drain to Source on State Resistance
RDS (on) (Ω)
0.20
3
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current ID (A)
s
m
tio
0.01
0.003
0
Drain to Source Saturation Voltage VDS (on) (V)
10
Operation in
this area is
limited by RDS(on)
ra
0.03
pe
50
0.1
O
100
=
150
C
Drain Current ID (A)
0.3
D
Channel Dissipation
Maximum Safe Operation Area
PW
Pch (mW)
Power vs. Temperature Derating
20
Pulse Test
10
5
VGS = 2.5 V
2
4V
1
0.5
0.2
0.01 0.02
0.05
0.1
0.2
0.5
Drain Current ID (A)
1
Forward Transfer Admittance
vs. Drain Current
10
Pulse Test
8
ID = 0.2 A
6
VGS = 2.5 V
0.1 A
4
0.05 A
0.2 A
2
0.05, 0.1 A
4V
0
–40
0
40
80
120
160
0.5
0.2
75°C
0.02
0.01
0.001 0.003
0.01
0.03
0.1
0.3
Case Temperature TC (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
1
Ciss
10
Coss
3
Crss
1
VGS = 0
f = 1 MHz
10
20
30
40
50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
0.20
0.16
0.12
–5 V
VGS = 0
0.08
0.04
Pulse Test
0
VDS = 10 V
Pulse Test
0.005
30
0
25°C
0.05
2
0.1
Tc = –25°C
0.1
100
0.3
Reverse Drain Current IDR (A)
Forward Transfer Admittance yfs (S)
Static Drain to Source on State
Resistance vs. Temperature
Switching Time t (µs)
Capacitance C (pF)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK2569
0.2
0.4
0.6
Source to Drain Voltage
Rev.3.00 Dec 27, 2006 page 4 of 6
0.8
1.0
VSD (V)
1
td(off)
tf
0.5
0.2
tr
0.1
VGS = 10 V
0.05 VDD = 30 V
PW = 5 µs
duty < 1 %
0.02
0.01 0.02 0.05
td(on)
0.1
Drain Current
0.2
0.5
ID (A)
1
2SK2569
Switching Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
50 Ω
10%
10%
VDD
= 30 V
90%
td(on)
Rev.3.00 Dec 27, 2006 page 5 of 6
10%
tr
90%
td(off)
tf
2SK2569
Package Dimensions
JEITA Package Code
SC-59A
Package Name
MPAK
RENESAS Code
PLSP0003ZB-A
D
Previous Code
MPAK(T) / MPAK(T)V
A
Q
e
E
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
A3
A
x M S
A
b
Reference Dimension in Millimeters
Symbol
Min Nom Max
e
A2
A
e1
A1
S
b
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.16
1.5
0.95
2.8
1.3
0.1
1.2
0.5
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
Part Name
2SK2569ZN-TL-E
2SK2569ZN-TR-E
Quantity
3000 pcs
3000 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Dec 27, 2006 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.0