RQJ0304DQDQA Silicon P Channel MOS FET Power Switching REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 G 1 1. Source 2. Gate 3. Drain 2 S 1 Notes: Marking is "DQ". Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS Ratings –30 +8 / –12 Unit V V ID ID(pulse) Note1 –1.8 –8 A A IDR Pch Note2 1.8 0.8 A W Tch Tstg 150 –55 to +150 °C °C Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 1 of 7 RQJ0304DQDQA Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min –30 +8 –12 — — — –0.4 — — 1.8 — — — — — — — Typ — — — — — — — 195 300 2.5 185 45 25 18 33 22 5 Max — — — +10 –10 –1 –1.4 245 420 — — — — — — — — Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Qg Qgs Qgd VDF — — — — 1.9 0.4 0.7 –0.9 — — — –1.3 nC nC nC V Notes: 3. Pulse test REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 2 of 7 Test conditions ID = –10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –10 V, ID = -1 mA ID = –1.0 A, VGS = –4.5 V Note3 ID = –1.0 A, VGS = –2.5 V Note3 ID = –1.0 A, VDS = –10 V Note3 VDS = –10 V, VGS = 0, f = 1 MHz ID = –1.0 A VGS = –4.5 V RL = 10 Ω Rg = 4.7 Ω VDD = –10 V VGS = –4.5 V ID = –2.0 A IF = –2.0 A, VGS = 0 Note3 RQJ0304DQDQA Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area –10 10 0 1 Channel Dissipation Pch (W) 1 Drain Current ID (A) 0.2 s s m m 10 100 ion at er Op 0.4 –1 DC 0.6 µs s m 0.8 Operation in this area is limited by RDS(on) –0.1 Ta = 25°C 1 Shot Pulse 0 0 25 50 75 100 125 –0.01 –0.01 150 –10 –1 –0.1 –100 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4 40 x 40 x 1 mm) Typical Transfer Characteristics (1) Typical Output Characteristics –5 V –4.8 V –10 Pulse Test Tc = 25°C Drain Current ID (A) –4.2 V –4.0 V –3.8 V –3.6 V –3.4 V –3.2 V –3.0 V –2.8 V –2.6 V –2.4 V –8 –6 –4 –2.0 V –2 0 –2.0 –4.4 V –10 V VDS = –10 V Pulse Test Drain Current ID (A) –8 V –2 –4 –6 –8 –1.2 –0.8 Tc = 75°C –0.4 25°C –25°C –1.6 V VGS = 0V 0 –1.6 0 –10 Drain to Source Voltage VDS (V) 0 1 2 3 4 Gate to Source Voltage VGS (V) –1 Drain Current ID (A) Tc = 75°C –0.1 25°C –25°C –0.01 –0.001 VDS = –10 V Pulse Test –0.0001 0 –0.5 –1 –1.5 –2 –2.5 –3 Gate to Source Voltage VGS (V) REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 3 of 7 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature –1.5 –1 mA ID = –10 mA –1.0 –0.5 –0.1 mA VDS = –10 V Pulse Test 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQJ0304DQDQA Pulse Test Tc = 25°C –0.6 –0.4 ID = –2.0 A –1.5 A –0.2 –1.0 A –0.5 A 0 0 –2 –4 –6 –8 Drain to Source on State Resistance RDS(on) (Ω) –0.8 Static Drain to Source on State Resistance vs. Drain Current –10 1 –4.5 V VGS = –2.5 V 0.1 –10 V Pulse Test Tc = 25°C 0.01 –0.1 –1 –10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Static Drain to Source on State Resistance vs. Case Temperature (2) 0.6 ID = –2.0 A 0.5 –1.5 A 0.4 –1.0 A 0.3 –0.5A 0.2 0.1 0 –25 Pulse Test VGS = –2.5 V 0 25 50 75 100 125 150 0.35 ID = –2.0 A 0.3 –1.5 A 0.25 0.2 –1.0 A –0.5A 0.15 0.1 0.05 Pulse Test VGS = –4.5 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 10 Pulse Test VDS = –10 V –25°C 25°C Tc = 75°C 1 –0.1 Drain to Source on State Resistance RDS(on) (Ω) Gate to Source Voltage VGS (V) 1 Drain Current ID (A) REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 4 of 7 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –10000 –1000 Pulse Test VGS = 0 V VDS = –30 V –100 –10 –1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQJ0304DQDQA Switching Characteristics 0 VDD = –10 V –25 V –10 –2 –20 –30 –6 ID = –2.0 A Tc = 25°C –40 0 –8 1 1000 2 3 4 VGS = –4.5 V, VDD = –10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = 25°C 100 tr td(off) td(on) 10 tf 1 –0.01 5 –0.1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 360 VGS = 0 V f = 1 MHz 340 Ciss 100 Coss Crss 10 320 300 280 260 1 –0 –5 –10 –15 –20 –25 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature Pulse Test Tc = 25°C –8 –10 V –6 –4.5 V –4 –2.5 V –2 VGS = 0, 2.5, 4.5, 10 V 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage VSD (V) REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 5 of 7 Body-Drain Diode Forward Voltage VSDF (V) Reverse Drain Current IDR (A) VDS = 0 f = 1MHz 240 –10 –8 –6 –4 –2 0 –30 –10 0 –10 –1 Gate Charge Qg (nC) Ciss (pF) Ciss, Coss, Crss (pF) –4 VDD = –10 V –25 V 1000 Switching Time t (ns) 0 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics –0.6 VGS = 0 –0.5 ID = –10 mA –0.4 –1 mA –0.3 –0.2 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQJ0304DQDQA Switching Time Test Circuit Vout Monitor Vin Monitor Switching Time Waveform Vin 10% D.U.T. Rg Vin –10 V RL 90% VDD = –30 V REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 6 of 7 90% 90% Vout 10% td(on) tr 10% td(off) tf RQJ0304DQDQA Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g A Q e E HE L A c LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 Part No. Quantity 3000 pcs. REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 7 of 7 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information RQJ0304DQDQATL-E 1.3 0.1 1.2 Shipping Container φ178 mm reel, 8 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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