RQJ0305EQDQS Silicon P Channel MOS FET Power Switching REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 1 3 1. Gate 2. Drain 1G 3. Source 4. Drain 4 S 3 Notes: Marking is "EQ". Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Tch Ratings –30 +8 / –12 –3.4 –12 3.4 1.5 83 150 Unit V V A A A W °C /W °C Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Page 1 of 7 RQJ0305EQDQS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min –30 +8 –12 — — — –0.4 — — 3.0 — — — — — — — Typ — — — — — — — 110 165 4.3 330 70 40 17 37 39 10 Max — — — +10 –10 –1 –1.4 140 230 — — — — — — — — Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Qg Qgs Qgd VDF — — — — 3.0 0.6 1.3 –0.9 — — — –1.3 nC nC nC V Notes: 3. Pulse test REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Page 2 of 7 Test conditions ID = –10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –10 V, ID = -1 mA ID = –1.7 A, VGS = –4.5 V Note3 ID = –1.7 A, VGS = –2.5 V Note3 ID = –1.7 A, VDS = –10 V Note3 VDS = –10 V, VGS = 0, f = 1 MHz ID = –1.3 A VGS = –4.5 V RL = 7.7 Ω Rg = 4.7 Ω VDD = –10 V VGS = –4.5 V ID = –2.4 A IF = –3.4 A, VGS = 0 Note3 RQJ0305EQDQS Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area –100 1.5 1.0 1 s –1 m s –0.1 Operation in this area is limited by RDS(on) 0 0 25 50 75 100 125 –0.01 –0.01 150 –6 V –10 –3.2 V –2.8 V –2.6 V –6 –2.4 V –2.2 V –4 –2.0 V –1.8 V –2 0 –1.6 V –2 VDS = –10 V Pulse Test –2.2 –1.6 –1.2 –0.8 Tc = 75°C 25°C –0.4 –25°C Pulse Test Tc = 25°C 0 –100 –2.4 –3.0 V –8 –10 –1 Typical Transfer Characteristics (1) Typical Output Characteristics –4 V Drain Current ID (A) –8 V –10 V –0.1 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Drain Current ID (A) m 10 s m n 0 tio 10 era p O 0.5 100 µs –10 C Drain Current ID (A) Ta = 25°C 1 Shot Pulse D Channel Dissipation Pch (W) 2.0 VGS = 0V –4 –6 –8 0 –10 Drain to Source Voltage VDS (V) 0 –1 –2 –3 –4 Gate to Source Voltage VGS (V) –1 Drain Current ID (A) Tc = 75°C –0.1 25°C –25°C –0.01 –0.001 VDS = –10 V Pulse Test –0.0001 0 –0.5 –1 –1.5 –2 –2.5 –3 Gate to Source Voltage VGS (V) REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Page 3 of 7 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature –1.5 ID = –10 mA –1 mA –1.0 –0.5 –0.1 mA VDS = –10 V Pulse Test 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQJ0305EQDQS Pulse Test Tc = 25°C –0.4 –0.3 ID = –2.4 A –2.0 A –0.2 –1.5 A –0.1 –1.0 A 0 0 –2 –4 –6 –8 Drain to Source on State Resistance RDS(on) (Ω) –0.5 Static Drain to Source on State Resistance vs. Drain Current –10 1 VGS = –2.5 V –4.5 V –10 V 0.1 Pulse Test Tc = 25°C 0.01 –0.1 –1 –10 –100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Static Drain to Source on State Resistance vs. Case Temperature (2) Drain to Source on State Resistance RDS(on) (Ω) Gate to Source Voltage VGS (V) 0.3 ID = –2.4 A 0.25 –2.0 A –1.5 A 0.2 –1.0 A –0.5A 0.15 0.1 0.05 Pulse Test VGS = –2.5 V 0 –25 0 25 50 10 75 100 125 150 ID = –2.4 A –2.0 A 0.16 –1.5 A –1.0 A 0.12 –0.5A 0.08 0.02 Pulse Test VGS = –4.5 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature Pulse Test VDS = –10 V –25°C 25°C Tc = 75°C 1 –0.1 0.2 Case Temperature Tc (°C) –1 Drain Current ID (A) REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Page 4 of 7 –10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –10000 –1000 Pulse Test VGS = 0 V VDS = –30 V –100 –10 –1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQJ0305EQDQS Switching Characteristics 0 VDD = –10 V –25 V –10 –2 VDD = –10 V –25 V –20 –4 –30 –6 –40 0 ID = –2.4 A Tc = 25°C 1 –8 2 3 4 1000 Switching Time t (ns) 0 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(off) td(on) 10 tf –0.1 –10 –1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 700 650 Coss Crss Ciss (pF) 100 10 600 550 500 450 VGS = 0 V f = 1 MHz 1 –0 –5 –10 –15 –20 –25 6 8 10 Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature –8 –10 V –2.5, –4.5 V –0 V –2 VGS = 2.5, 4.5, 10 V 0 4 Gate to Source Voltage VGS (V) Pulse Test Tc = 25°C –4 2 Drain to Source Voltage VDS (V) –10 –6 VDS = 0 f = 1MHz 400 –10 –8 –6 –4 –2 0 –30 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Source to Drain Voltage VSD (V) REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Page 5 of 7 Body-Drain Diode Forward Voltage VSDF (V) Ciss, Coss, Crss (pF) tr Gate Charge Qg (nC) Ciss Reverse Drain Current IDR (A) 100 1 –0.01 5 1000 0 VGS = –4.5 V, VDD = –10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = 25°C –0.6 VGS = 0 –0.5 ID = –10 mA –0.4 –1 mA –0.3 –0.2 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQJ0305EQDQS Switching Time Test Circuit Vout Monitor Vin Monitor Switching Time Waveform Vin 10% D.U.T. Rg Vin –10 V RL 90% VDD = –30 V REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Page 6 of 7 90% 90% Vout 10% td(on) tr 10% td(off) tf RQJ0305EQDQS Package Dimensions Previous Code UPAK / UPAKV 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max MASS[Typ.] 0.050g Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part No. RQJ0305EQDQSTL-E Quantity 1000 pcs. REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Page 7 of 7 Shipping Container φ178 mm reel, 12 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2009. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.2