RJK2511DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page 1 of 6 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Ratings 250 ±30 65 200 65 200 Unit V V A A A A IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 22 30.2 200 0.625 150 –55 to +150 A mJ W °C/W °C °C RJK2511DPK Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance RDS(on) Min 250 — — 3.0 30 — Typ — — — — 51 0.028 Max — 1 ±0.1 4.5 — 0.034 Unit V µA µA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 4900 690 85 52 200 160 150 120 28 51 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr Body-drain diode reverse recovery charge Qrr — — — 0.93 200 1.5 1.50 — — V ns µC Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| Notes: 4. Pulse test REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page 2 of 6 Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 32.5 A, VDS = 10 V Note4 ID = 32.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 32.5 A VGS = 10 V RL = 3.9 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 65 A IF = 65 A, VGS = 0 Note4 IF = 65 A, VGS = 0 diF/dt = 100 A/µs RJK2511DPK Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 300 Drain Current ID (A) Channel Dissipation Pch (W) 400 300 200 100 0 50 100 150 200 Ta = 25°C 100 1m s 30 PW = 10 ms (1shot) 3 1 DC Operation (Tc = 25°C) 0.3 0.1 Operation in this 0.03 area is limited by RDS(on) 0.01 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 6.3 V VDS = 10 V Pulse Test 8V 80 Drain Current ID (A) Drain Current ID (A) µs s 10 10 V 5.9 V 60 5.5 V 40 Pulse Test 20 5V 80 60 40 20 Tc = 75°C VGS = 0 V 4 8 12 16 0 20 2 4 25°C −25°C 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 4 0.1 Pulse Test 3 ID = 65 A 2 32.5 A 1 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page 3 of 6 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) 0µ Case Temperature Tc (°C) 100 0 10 10 VGS = 10 V 0.05 0.02 0.01 0.005 0.002 Pulse Test 0.001 1 3 10 30 100 300 Drain Current ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature 0.1 VGS = 10 V Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) RJK2511DPK Pulse Test 0.08 ID = 65 A 32.5 A 0.06 10 A 0.04 0.02 0 −25 0 25 50 75 100 125 150 Case Temperature 100 Tc = −25°C 30 25°C 10 3 75°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 100 VGS = 0 f = 1 MHz Capacitance C (pF) 30000 200 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 10000 3000 Ciss 1000 300 Coss 100 30 Crss 10 1 0.1 0.3 1.0 3 10 30 100 0 50 100 150 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 400 16 ID = 65 A VGS VDD = 200 V 100 V 50 V 300 12 VDS 8 100 4 VDD = 200 V 100 V 50 V 0 40 80 120 160 Gate Charge Qg (nC) REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page 4 of 6 200 10000 Switching Time t (ns) Drain to Source Voltage VDS (V) 30 100000 500 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 10 Typical Capacitance vs. Drain to Source Voltage 1000 0 3 Drain Current ID (A) Tc (°C) Body-Drain Diode Reverse Recovery Time 200 1 VGS = 10 V, VDD = 125 V PW = 5 µs, duty ≤ 1 % RG = 10 Ω tf 1000 tr td(off) tf td(off) 100 t d(on) tr 10 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 RJK2511DPK Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 100 80 60 40 10 V VGS = 0 V 20 5V Pulse Test 0 0.4 0.8 1.2 1.6 VDS = 10 V ID = 10 mA 4 1 mA 3 2 0.1 mA 1 0 -25 2.0 0 50 75 100 125 150 Case Temperature Tc (°C) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) 25 Normalized Transient Thermal Impedance vs. Pulse Width 3 1 Tc = 25°C D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c 0.1 θch – c = 0.625°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 D= e uls 1 0.0 PW tp o sh T 1 0.01 10 µ PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 125V 90% td(on) REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page 5 of 6 tr 90% td(off) tf RJK2511DPK Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJK2511DPK-00-T0 Quantity 360 pcs REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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