HAT2132H Silicon N Channel MOS FET High Speed Power Switching REJ03G0177-0300 Rev.3.00 Dec 07, 2006 Features • Low drive current. • Low on-resistance • Low profile Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK ) 5 D 5 4 G 3 12 1, 2, 3 4 5 4 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.3.00 Dec 07, 2006 page 1 of 6 Symbol VDSS VGSS ID Note1 ID(pulse) IDR IDR(pulse) Note1 IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 6 24 6 24 6 2.4 20 6.25 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C HAT2132H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Rev.3.00 Dec 07, 2006 page 2 of 6 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 200 — — 3.0 2.7 — — — — — — — — — — — — Typ — — — — 4.7 0.36 450 65 13 19 26 48 9 12.5 2.5 6 0.85 Max — 1 ±0.1 4.0 — 0.45 — — — — — — — — — — 1.30 Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V trr — 95 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VDS = 10 V Note4 ID = 3 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 3 A VGS = 10 V RL = 33.3 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 6 A IF = 6 A, VGS = 0 Note4 IF = 6 A, VGS = 0 diF/dt = 100 A/µs HAT2132H Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 ID (A) Drain Current D C (T Op c era = 25 tion °C ) ) ot Sh 50 100 150 1 0.3 Operation in this area is limited by RDS (on) 0.1 Case Temperature Ta = 25°C 0.01 0.1 0.3 1 3 200 (A) 6.5 V 6V 8 ID 8 VDS = 10 V Pulse Test Pulse Test 8V 6 6 Drain Current (A) VDS (V) 10 10 V 4 5.5 V 2 4 Tc = 75°C 2 25°C VGS = 5 V –25°C 0 0 0 4 8 12 Drain to Source Voltage 16 20 0 Pulse Test 8 6 ID = 8 A 4 5A 2 2A 0 0 4 8 12 Gate to Source Voltage Rev.3.00 Dec 07, 2006 page 3 of 6 16 20 VGS (V) 4 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) 10 2 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 100 300 1000 Typical Transfer Characteristics 10 ID 10 30 Drain to Source Voltage Tc (°C) Typical Output Characteristics Drain Current s 0 m 3 0.03 0 µs µs 1 s( m 10 0 10 20 10 1 30 10 = Channel Dissipation 10 30 PW Pch (W) 40 10 Pulse Test 5 2 1 0.5 VGS = 10 V, 15 V 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT2132H 2.5 VGS = 10 V Pulse Test 2.0 1.5 5A ID = 8 A 1.0 0.5 2A 0 –40 0 40 80 Case Temperature 120 Tc 160 100 VDS = 10 V Pulse Test 30 Tc = –25°C 10 3 25°C 75°C 1 0.3 0.1 0.1 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 5000 200 100 50 di / dt = 100 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 Reverse Drain Current 30 Ciss 500 200 100 Coss 50 20 Crss 10 5 100 0 20 4 VDD = 160 V 100 V 50 V 0 0 20 40 Gate Charge Rev.3.00 Dec 07, 2006 page 4 of 6 60 80 Qg (nc) 80 100 0 100 VGS (V) 1000 Switching Time t (ns) 100 12 8 VDS 60 Switching Characteristics Gate to Source Voltage VDS (V) Drain to Source Voltage 200 VGS 40 Drain to Source Voltage VDS (V) 16 VDD = 50 V 100 V 160 V 300 100 1000 IDR (A) ID = 6 A 30 VGS = 0 f = 1 MHz Dynamic Input Characteristics 400 10 Typical Capacitance vs. Drain to Source Voltage 1000 10 0.1 3 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time 20 1 0.3 VGS = 10 V, VDD = 100 V PW = 10 µs, duty ≤ 1 % Rg = 10 Ω 300 100 td(off) 30 td(on) 10 tr tf 3 1 0.1 0.2 0.5 1 Drain Current 2 ID (A) 5 10 HAT2132H Reverse Drain Current IDR (A) 10 8 6 4 VGS = 0 10 V 5V 2 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS (off) (V) Reverse Drain Current vs. Source to Drain Voltage 2.0 5 VDS = 10 V ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 –40 0 40 80 Case Temperature VSD (V) 120 Tc (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 6.25°C/W, Tc = 25°C 0.1 0.05 D= PDM 0.03 0.02 1 0.0 lse t ho PW T pu 1s 0.01 10 µ PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit 90% Vout Monitor Vin Monitor 10 Ω Switching Time Waveform D.U.T. Vin Vout Vin 10 V VDD = 100 V 10% 10% 90% td(on) Rev.3.00 Dec 07, 2006 page 5 of 6 10% RL tr 90% td(off) tf 160 HAT2132H Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A 4.9 5.3 Max 4.0 ± 0.2 MASS[Typ.] 0.080g +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 0° – 8° +0.25 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 Unit: mm 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part No. HAT2132H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Dec 07, 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.0