TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BA482; BA483; BA484 Band-switching diodes FEATURES DESCRIPTION • Continuous reverse voltage: max. 35V Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. • Continuous forward current: max. 100mA • Low diode capacitance: max. 1.0 to 1.6pF • Low diode forward resistance: max. 0.7 to 1.2 Q. The diodes are type branded. APPLICATION Fig.1 Simplified outline (SOD68; DO-34) and symbol. • VHP television tuners. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). PARAMETER SYMBOL continuous reverse voltage continuous forward current storage temperature junction temperature VB IF T»|g Tj MIN. MAX. - 100 35 UNIT V mA +150 «c - 150 «C -65 ELECTRICAL CHARACTERISTICS Tj« 25 °C unless otherwise specified. SYMBOL VF IR cd TO PARAMETER forward voltage reverse current diode capacitance BA482 BA483 BA484 diode forward resistance BA482 BA483 BA484 CONDITIONS TYP. MAX. IF » 100 mA; see Fig. 2 - 1.2 see Fig.3 V n -20V - VR = 20V;T mb -75»C f - 1 to 100 MHz; VR - 3 V; see Fig.4 - 100 1 UNIT V nA jiA 0.8 1.2 pF 0.7 1.0 PF 1.0 1.6 PF 0.6 0.7 Q 0.8 1.2 Q 0.8 1.2 Q IP - 3 mA; f - 200 MHz; see Fig. 5 NJ .Semi-Cimiluctort reserves the right tn change test conditions, parameter limia .md package dimensions without noiic« Inrbrmation Itimiihtd by NJ Stmi-C onduclors it bclkved to hv hulh accural* nml rdiuble .it the lime of going l<i press. However NI Semi -L onJutlor< .I^MIIIKS no re-.pniisibilily tor ;my trn'rs ,<r iiinivsioiii Jiscuvured in its ti*e N.I Scitn-C i iulm.li r-i ci BA482; BA483; BA484 Band-switching diodes THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a FR4 printed-circuit board without metallization pad. GRAPHICAL DATA (nA) 104 (mA) 10 0 (1) T, = 75 °C; typical values. (2) Tj = 25 "C; typical values. (3) Tj = 25 'C, maximum values. Fig.2 Forward current as a function of forward voltage. 50 100 T)(OC) 150 VR = 20 V Solid line: maximum values Dotted line: typical values Fig.3 Reverse current as a function of junction temperature. Band-switching diodes BA482; BA483; BA484 THERMAL CHARACTERISTICS SYMBOL Rthj-ip Rthj-« CONDITIONS PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient VALUE UNIT lead length 10 mm 300 K/W lead length 10 mm; note 1 500 K/W PACKAGE OUTLINE ' 0.55 t rrmx -25.4mlr>- 3.04 max -S5.4mln- Dimensions In mm. Fig.6 SOD68; DO-34. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.