PHILIPS BAT81

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification
Supersedes data of July 1991
1996 Mar 20
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
FEATURES
DESCRIPTION
• Low forward voltage
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed leaded glass
package
• Low diode capacitance.
k
handbook, halfpage
a
APPLICATIONS
MAM193
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
• Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
continuous reverse voltage
BAT81
−
40
V
BAT82
−
50
V
BAT83
−
60
V
−
30
mA
IF
continuous forward current
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
−
150
mA
IFSM
non-repetitive peak forward current
tp ≤ 10 ms
−
500
mA
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
125
°C
1996 Mar 20
2
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
see Fig.2
IF = 0.1 mA
330
mV
IF = 1 mA
410
mV
IF = 15 mA
1
V
IR
reverse current
VR = VRmax; see Fig.3
200
nA
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.4
1.6
pF
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOD68 standard mounting conditions.
1996 Mar 20
3
VALUE
UNIT
320
K/W
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
GRAPHICAL DATA
MGC690
2
10halfpage
handbook,
MGC689
4
10halfpage
handbook,
(1)
IR
(nA)
IF
(mA)
10 3
(1) (2) (3)
10 2
10
(2)
10
1
1
(3)
10
(1) (2) (3)
10 −1
0
0.2
0.4
0.6
0.8
10 −2
1.0
VF (V)
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.2
Fig.3
MGC688
2.0
Cd
(pF)
1.5
1.0
0.5
0
15
30
45
60
VR (V)
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
1996 Mar 20
0
20
40
VR (V)
60
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Forward current as a function of forward
voltage; typical values.
0
−1
4
Reverse current as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
Schottky barrier diodes
BAT81; BAT82; BAT83
PACKAGE OUTLINE
handbook, full pagewidth
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
MSA212 - 1
Dimensions in mm.
Cathode indicated by a coloured band.
The diodes are type branded.
Fig.5 SOD68; (DO-34).
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 20
5