DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 1PS76SB10 Schottky barrier diode Product specification 1996 Oct 14 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package. • Guard ring protected • Very small plastic SMD package. APPLICATIONS handbook, 4 columns k a • Ultra high-speed switching • Voltage clamping • Protection circuits MAM283 • Blocking diodes. Marking code: S0. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 1996 Oct 14 2 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB10 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.2 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 µA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 10 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD323 standard mounting conditions. 1996 Oct 14 3 VALUE UNIT 450 K/W Philips Semiconductors Product specification Schottky barrier diode 1PS76SB10 GRAPHICAL DATA MSA892 IF (mA) IR (µA) (1) (2) (3) 10 MSA893 10 3 3 10halfpage handbook, 2 (1) 10 2 (2) 10 10 1 10 1 (1) (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 1.2 0 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MSA891 15 Cd (pF) 10 5 0 0 10 20 V R (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14 4 10 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diode 1PS76SB10 PACKAGE OUTLINE handbook, full pagewidth 1.00 max 1.35 1.15 0.25 0.10 0.40 0.25 0.55 0.40 , , 0.05 max MBC672 - 1 A 1.8 1.6 2.7 2.3 0.2 M A Dimensions in mm. The marking bar indicates the cathode. Fig.5 SOD323. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 14 5