TELEPHONE: (973) 376-2922
(212)227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FAX: (973) 376-8960
Features
FAST SWITCHING
LOW CAPACITANCE
HIGH CURRENT CAPABILITY
Description/Applications
The 5082-1000 series of diodes feature planar silicon
epitaxial construction to provide high conductance, low
capacitance, and nanosecond turn-on and turn-off.
Process control of the diode manufacturing enables
specification of effective minority carrier lifetime. Turn-on
time and voltage overshoot are minimized in these diodes
of low conductivity modulation.
These diodes are ideally suited for applications such as
core drivers, pulse generators, input gates or wherever
high conductance without loss of speed is required.
TA — Operating Temperature Range
2.72 (0.107)
ZlSfiSSig)
t
25.4(1.001
WIN.
"pn
Maximum Ratings at TCASE=25°C
WIV — Working Inverse Voltage
1006
1001/1002
1003/1004
IF (Surge) — Forward Current Surge,
1.0 Second Duration
IF (Surge) — Forward Current Surge,
1.0 Microsecond Duration
PDISS — Power Dissipation'1!
5082-1001 (IN 4456)
5082-1002
5082-1003
5082-1004
50821006
HIGH
CONDUCTANCE
DIODES
CATHODE
40 Volts
30 Volts
20 Volts
0.75 Amp
25.4 (1.00)
7.50 Amp
500 mW
MIN.
-65°C to +175°C
TSTG — Storage Temperature Range -65° C to +200° C
Operation of these devices within the above
temperature ratings will assure a device Mean
Time Between Failure (MTBF) of approximately
1 x 10^ hours.
^
0.56(0022}
OUTLINE 11
WMENSIONS IN MILLIMETERS AND (INCHES)
Electrical Specifications at T A =25°c
Part
Number
5082-
VBB (V)
Minimum
Forward
Current
lF{mA)
Maximum
Reverse
Leakage.
Currant
In (nA)
Maximum
Minimum
Forward
Current
If(mA)
InCuA)
(Maximum
Total
Capacitance
Co (PF)
Minimum
Breakdown
Voltage
Leakage
Current
Maximum
Reverse
Recovery
Time
Maximum
Turn-On
Time
trr(ns)
ton (ns)
1001
(1N4456)
1002
35
180
500
200
200
1.5
1.5
2.5
35
300
800
3.0
2.0
2.5
25
100
200
150
300
200
200
2,0
1.5
2.0
600
200
200
200
200
1003
4,0
2.0
2.0
500
200
200
1.1
1.5
—
Vp*t0V
Vp=1.4V
I2J
12}
150° C'31
VR=OV,
f=1.Q MHz
(Figure 9)
( Figure 10 1
1004
25
1006
50
Test
Conditions
lfi=10^A
13)
NOTES: 1. Mounted on a printed circuit board in still air.
2. Measured at a repetition rate not to exceed the power
dissipation.
3. Vn=35V for 1006; VR=30V for 1001, 1002; V R =20V for
1003, 1004.
f l i *^«I
Reverie
4. Inductance measured at the edge of the glass package seal is
typically 4.0 nH for all devices.
5. Rectification Efficiency is typically 65% for all devices
1800
,
.81
0
1000
.2
.4
.6
.8
1.0
1,2
1.4
0
.2
.4
.8
.8
1.0
1.2
1.4
FORWARD VOLTAGE IV)
FORWARD VOLTAGE (VI
Figure 1. Typical Forward Conduction Characteristics,
5082-1001, 1003, and 1006.
Figure 2. Typical Forward Conduction Characteristics,
5082-1002 and 1004.
10,000
JUU
V
\
iv
1.0
At
0.5
K
1
.1
1.0
1.5
2.0
2.5
3.0
3.6
0
4.0
25
50
78
100
125
150
176
AMBIENT TEMPERATURE (°C)
TEMPERATURE COEFFICIENT (rnWC)
Figure 3. Typical Forward Current Temperature
Coefficient.
Figure 4. Typical Reverse Current at Specified VR vs.
Increasing Temperature.
5.0
10
15
20
2S
REVERSE VOLTAGE (V)
30
35
t
p p p
o
f
_o — to £> *. 01
a
HATEOWJWER DISSIPATION (WATTS)
1000
\
\\|
\E SO 7
TA - AMBIENT TEMPERATURE f C)