1N649-1 - New Jersey Semiconductor

, One,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
1N645 - 1N649
1N645-1 - 1N649-1
Silicon Rectifier DO35 package
Features
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DO-35 Glass Package
Six Sigma quality
Lead Dia.
0.018-0.022"
Humidity proof glass
0.458-0.558 mm
Metallurgical^ bonded
Thermally matched system
<- 1.0" X Length >
No thermal fatigue
006-0,09"
25.4 mm
0.120-.200(Min.)
3.05-5.0B-mm
1.53-2.28 mm
High surge capability
Sigma Bond™ plated contacts
100% guaranteed solderability
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available
Absolute Maximum Ratings
Symbol
Power Dissipation at 3/8" from the body, TL= 75 °C
Average Forward Rectified Current at TL
P,o,
= 75 °C
Unit
Value
mWatts
600
mAmps
'AV
400
Operating and Storage Temperature Range
o&s
-6510175
°C
Thermal Impedance
Z qJX
...
35
°C/W
Detail Specifications
Volts
Breakdown
Voltage
(WIN.)
@ 100uA
(Bv)
Volts
Amps
Amps
1N646.-1
1N647.-1
1N648.-1
225
300
400
500
275
360
480
600
0.4
0.4
0.4
0.4
1N649.-1
600
720
0.4
0.15
0.15
0.15
0.15
0.15
Reverse
Voltage
Type
1N645.-1
Maximum
Average Rectified Curre nt
do)
25° C
Maximum
Forward
Voltage
R averse Leakage Current
Drop
(VF) @ IF = 400mA
do)
150° C (MIN.)
We
(MAX.) 25° C R
Volts
1.0
1.0
1.0
1.0
1.0
Maximum
Typical
Surge
Junction
Current Capacitance
(IFSM)
@ -12V
(NOTE 1)
(C0)
MA
uA
Amps
pF
0.2
0.2
0.2
0.2
15
15
20
20
25
3
3
3
3
9
9
9
9
3
9
0.2
Note 1: Surge Current @TA = +25° C to +150° C, for 1 Second
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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