na. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.3A 2N4117 2N4117A 2N4119 2N4119A TELEPHONE: (973) 378-2802 (212)227-6008 FA)C(873|378^»80 2N4118 2N4118A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS FOR VERY LOW INPUT CURRENT DC AMPLIFIERS IGSS < 1 pA (2N4117A Series) • IGSS < 10 pA (2N4117 Series) • ,-«jr H8J M *' ^ »P JEDEC TCM2 Fourth lead !• in eltctrfeil contact with cue. PRODUCT CONDITIONING Units receive the following treatment before final electrical tests: High Temp Storage: 24 Hours at 150°C 25, OOOg Acceleration/Impact in the YI Plane Thermal Shock: +100 to 0°C for 5 Cycles Helium and/or Gross Leak Tests forHermeticity •ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage (Note 1) Gate-Current Total Device Dissipation (Derate 2 mW/°C to 175°C) Storage Temperature Range, Lead Temperature 1/16" from Case for 10 sec -40 V 50 mA 300 mW -65 to + 175°C 255°C •ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) aN-iii7 Charactoristlc Min KISS v c s --20 v, Gate llcversc Current 2N-1117 Series Only VDS = o Gate Ilcvcrso Current -'N'.)117A Scries Only VDS = o "^GSS Gate-Source Hrcakdown Voltage IG * ^"A, V D s " 0 Vjj Gate-Source I'inch-Off VolUige V DS 'l)SS Drain Current at Zero Gate Voltage (Note 2) ^| s Common-Source Forward Tratiseonductance (Note !!) Ifjmj Koss Cj s a C|.s.s Common-Source Output Conductance Common-Source Input Capacitance Common-Source Itcvcrsc Trillin for Capacitance 2N-U18 2N411!) 2N4119A Tost Conditions V GS « -20 V, Max 25°C 150°C -10 -25 25°C iaO°C -1 -2.5 -40 Min Max Min Unit Mas -10 -25 -10 -25 PA -1 -1 -2.5 -2.5 PA nA -40 nA V -40 -0.6 -1.8 -1 -3 -2 -6 V V DS - 10 V, VOS - 0 0.03 0.09 0,08 0.24 0,20 0.60 mA VDS - lo v, vos • o, 70 210 80 250 aoo 3,0 Mmho " 10 V, 10 « 1 nA f - 1 kHz V D S - 10 V, V G S - 0 . f = 1 kHz VDS- 10 v, v cs » o, f . 1 MHz VDS" 10 v. v G S " 0 , t* 1 MHz 3 5 10 Mm ho 3 3 3 pF l.S 1.5 1. !> PF NOTIi.S: 1. Due in symmetrical geometry, these units may be operated with source and drain leads Interchanged. '.!. This parameter is measured during n 2 ms Interval 100 ma after power Is applied. (Not a JEDEC condition. ) •JKDEC registered t'ata. N.I Semi-Cundutlors reserves the right (n change test conditions, parameter limit* and package dimensions without notice Information furnished by NJ Semi-Cunduetors is believed to be holh accurate and reliable .it Ihe time of guing lo press. Himcvcr \ Stnii-C i'ii.liuiDis .i^siuncs no re<>ponsibility lor any errors ><r oinissiiuis Jisuivured in us IIM: NJ Scmi-C undtiLlors oncuuriiijes :u-:ti incr<; In vonlv lh.il Jnlashccts .ue turrent before placina unlen