One. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3819 N-Channel RF Amplifier w • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range VDG VGS b IGF TSTG Units V Ratings 25 -25 V 50 mA 10 mA -55- 150 °C * This ratings are limiting \: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Parameter Symbol Off Characteristics Gate-Source Breakdwon Voltage V(BR)GSS Gate Reverse Current 'GSS Gate-Source Cutoff Voltage VGS(off) Gate-Source Voltage VGS On Characteristics Zero-Gate Voltage Drain Current IDSS Small Signal Characteristics Forward Transfer Conductance gfs goss Output Conductance Forward Transfer Admittance Vfs Input Capacitance Ciss Reverse Transfer Capacitance Crss Test Condition Min. Typ. Max. Units V nA V V I G =1.0MA,V DS = 0 V G S =-15V,V D S =0 V DS = 15V, !D = 2.0nA V DS = 15V, !D = 200uA -0.5 2.0 8.0 -7.5 VDS = 15V,VGS = 0 2.0 20 mA 6500 50 Ijmhos umhos ^imhos PF PF 25 VDS = 15V, VGS = 0, f = 1.0KHz 2000 VDS= 15V, VGS = 0, f= 1.0KHz VDS= 15V, VGS = 0,f = 1.0KHz 1600 VDS = 1 5V, VGS = 0, f = 1 .0KHz VDS = 1 5V, VGS = 0, f = 1 .0KHz 8.0 4.0 Thermal Characteristics T A =25C unless otherwise noted Symbol PD RBJC Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient R8JA • Device mounted on FR-4 PCB 1 5" x 1 6" x 0.06" Max. 350 2.8 125 357 Units mW mW/°C "CAW °CWV NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 3.86MAX 1.02r0.10 nU.J8 ia_Q*°0510 ro -j o -o A 01 ^ 0 1 f \^ — -1 1 -Q 14.47 ±0.40 4.58 +0.20 o CD K) .27 ±0.20] 1 .27 ±0.20] (0.25)