, {Jnc. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Picoampere diode BAV45 FEATURES DESCRIPTION • Extremely low leakage current: max. 5 pA Silicon diode in a metal TO-18 can. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. • Low diode capacitance • Light insensitive. APPLICATION a • Clamping I • Holding H— k • Peak follower MAM207 • Time delay circuits • Logarithmic amplifiers Fig.1 Simplified outline (SOT18/15; TO-1 8 except for the two leads) and symbol. • Protection of insulated gate field-effect transistors. CAUTION Handle the device with care whilst soldering into the circuit. The extremely low leakage current can only be guaranteed when the bottom is free from solder flux or other contaminations. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage - 35 V VR continuous reverse voltage - 20 V IF continuous forward current - 50 mA IFRM repetitive peak forward current - 100 mA Plot total power dissipation - 200 mW see Fig. 2 Tamb = 25 °C; note 1 Tstg storage temperature -65 Tj junction temperature - +125 °C 125 °C Note 1. Device mounted on a FR4 printed-circuit board. N.I .Semi-Conductors reserves I he right to change test conditions, parameter limit* :md packuge dimensions without notice Information furnished by NJ Scmi-t unductors n believed to he holh accurate awl reliable .11 the time of going to press. However NI Semi-Conductors .I-.MIIIICS no responsibility fiir ;iny emirs iir omissions Jiscuvured in its u>e N.I Seini-Coiiilui.li rs cntounaes II-TI nitrs tn ia il\K ihlashcels ire current hefcre placina urikn BAV45 Picoampere diode ELECTRICAL CHARACTERISTICS TJ = 25 °C unless otherwise specified. SYMBOL PARAMETER MAX. CONDITIONS VF forward voltage IF = 10 mA; see Figs 3 and 4 IR reverse current see Fig. 5 VR = 5 V VR = 5 V; TJ = 80 °C VR = 20 V cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ii; measured at IR = 1 mA; see Fig. 7 UNIT 1 V 5 PA 250 PA 10 PA 1.3 600 pF ns THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth j-a thermal resistance from junction to ambient; note 1 VALUE UNIT 500 K/W Note 1. Device mounted on a FR4 printed-circuit board. Picoampere diode BAV45 PACKAGE OUTLINE _ 00.51 ~r max 0* 48 max 5.3 max -12.7 min- 5.8 max Dimensions in mm. Fig.8 SOT18/15; TO-18 (except for the two leads).