HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 EPOXY LED CHIPS .140 R (REF. ONLY) .084 .096 FEATURES .142 .152 .342 R .030 .426 .432 .325 1.225 1.255 .955 .965 .480 CATHODE DIMPLE • • • • • Highest power output available 880nm peak emission Nine chips connected in series Very wide angle of emission Electrically isolated case All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. .350 MIN .170 MAX OD-669 ANODE .680 .700 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP TEST CONDITIONS IF = 300mA IF = 5A Spectral Bandwidth at 50%, ∆λ IF = 50mA Forward Voltage, VF IF = 300mA Half Intensity Beam Angle, θ Reverse Breakdown Voltage, VR Capacitance, C Rise Time IR = 10µA VR = 0V MIN 390 TYP 500 6500 MAX mW 880 nm 80 120 13.5 30 5 11 3 Fall Time UNITS nm 15 Deg Volts Volts pF µsec 3 µsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 6W Continuous Forward Current 400mA Peak Forward Current (10µs, 400Hz)2 5A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 60°C/W Typical Maximum Junction Temperature 100°C 16°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-669 THERMAL DERATING CURVE 10 PEAK FORWARD CURRENT, Ip (amps) INFINITE HEAT SINK 4,000 3,000 2,000 NO HEAT SINK 1,000 0 100 50 75 AMBIENT TEMPERATURE (°C) DEGRADATION CURVE IF = 400mA TCASE = 48°C 70 UNITS PRE CONDITIONED AT IF = 110mA, TCASE = 100°C, t = 24 HOURS 60 102 103 STRESS TIME, (hrs) 104 FORWARD I-V CHARACTERISTICS t D= Ip t T T 0.1 1 DUTY CYCLE, D (%) 10 100 RADIATION PATTERN 80 60 40 20 –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.4 RELATIVE POWER OUTPUT 4 3 2 1 100 0.1 1.5 5 0 t = 100µs 1 0 –100 –80 105 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 10 14 18 22 FORWARD VOLTAGE, VF (volts) 26 SPECTRAL OUTPUT –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 10,000 80 1,000 60 40 20 0 750 0.5 –50 30 POWER OUTPUT, Po (mW) FORWARD CURRENT, IF (amps) 6 101 t = 50µs 100 IF = 200mA TCASE = 33°C 80 t = 10µs 0.01 0.01 100 90 50 RELATIVE POWER OUTPUT (%) 25 RELATIVE POWER OUTPUT (%) POWER DISSIPATION (mW) 5,000 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 6,000 MAXIMUM PEAK PULSE CURRENT 100 DC PULSE 10µs, 100Hz 10 800 850 900 WAVELENGTH, λ(nm) 950 1,000 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013