HIGH-POWER GaAlAs IRLED ILLUMINATOR OD-663

HIGH-POWER GaAlAs IRLED ILLUMINATOR
.053
.067
EPOXY
LED CHIPS .140 R
(REF. ONLY)
.084
.096
FEATURES
.142
.152
.342 R
.030
.426
.432
.325
1.225
1.255
.955
.965
.480
.350
MIN
CATHODE
.170
MAX
DIMPLE
OD-663
ANODE
•
•
•
•
•
•
Super high power output
880nm peak emission
Three chips connected in series
TO-66 header for good heat dissipation
100% tested for power output
Electrically isolated case
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
.680
.700
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Peak Emission Wavelength, λP
TEST CONDITIONS
IF = 300mA
IF = 8A
Spectral Bandwidth at 50%, ∆λ
IF = 50mA
Forward Voltage, VF
IF = 300mA
Half Intensity Beam Angle, θ
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IR = 10µA
VR = 0V
MIN
150
TYP
170
3500
MAX
mW
880
nm
80
120
4.5
30
5
30
1
Fall Time
UNITS
nm
5
Deg
Volts
Volts
pF
µsec
1
µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
2W
Continuous Forward Current
400mA
Peak Forward Current (10µs, 400Hz)2
8A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
60°C/W Typical
Maximum Junction Temperature
100°C
16°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
HIGH-POWER GaAlAs IRLED ILLUMINATOR
2,000
THERMAL DERATING CURVE
10
PEAK FORWARD CURRENT, Ip (amps)
POWER DISSIPATION (mW)
1,600
1,400
1,200
NO
HEAT SINK
1,000
INFINITE
HEAT SINK
800
600
400
200
25
50
75
AMBIENT TEMPERATURE (°C)
DEGRADATION CURVE
90
80
IF = 500mA
TCASE = 55°C
IF = 300mA
TCASE = 45°C
70
TCASE = 25°C
NO PRE BURN-IN PERFORMED
60
50
8
101
102
103
STRESS TIME, (hrs)
104
FORWARD I-V CHARACTERISTICS
t
D=
Ip
t
T
T
0.1
1
DUTY CYCLE, D (%)
10
100
RADIATION PATTERN
80
60
40
20
–60
–40
–20
0
20
40
BEAM ANGLE, θ(deg)
60
80
100
POWER OUTPUT vs TEMPERATURE
1.4
RELATIVE POWER OUTPUT
5
4
3
2
1
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
4
6
8
10
12
FORWARD VOLTAGE, VF (volts)
14
SPECTRAL OUTPUT
10,000
80
–25
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
POWER OUTPUT vs FORWARD CURRENT
1,000
60
40
20
0
750
0.5
–50
16
POWER OUTPUT, Po (mW)
FORWARD CURRENT, IF (amps)
RELATIVE POWER OUTPUT (%)
0.1
1.5
6
100
t = 50µs
1
0
–100 –80
105
7
0
t = 10µs
t = 100µs
100
IF = 300mA
TCASE = 91°C
MAXIMUM PEAK PULSE CURRENT
0.01
0.01
100
RELATIVE POWER OUTPUT (%)
100
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
1,800
0
OD-663
800
850
900
WAVELENGTH, λ(nm)
950
1,000
100
10
1
10
DC
PULSE
10µs, 100Hz
100
1,000
FORWARD CURRENT, IF (mA)
10,000
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision January 29, 2014