QUADRANT PHOTODIODE 5 mm2 SXUVPS4

QUADRANT PHOTODIODE 5 mm2
SXUVPS4
Dimensions are in inch [metric] units.
FEATURES
• Circular active area (4 quadrants)
• TO-5, 5 pin package
• 100% internal QE
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (PER ELEMENT)
PARAMETERS
TEST CONDITIONS
MIN
MAX
UNITS
mm2
1.25
R.049 [1.25 mm]
Active Area
TYP
See attached graph
Responsivity, R
@ ± 10 mV
100
MOhms
Reverse Breakdown Voltage, VR
IR = 1 µA
20
Volts
Capacitance, C
VR = 0 V
Shunt Resistance, Rsh
500
RL = 500 Ω, VR = 0 V
Response Time, tr
1
Volts
µsec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
-10° TO 40°C
Ambient
-20°C TO 80°C
Nitrogen or Vacuum
70°C
Maximum Junction Temperature
Lead soldering temperature
1
260°C
1
0.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision November 19, 2013
QUADRANT PHOTODIODE 5 mm2
Responsivity (A/W)
0.35
SXUVPS4
PHOTON RESPONSIVITY
0.30
0.25
0.20
0.15
0.10
0.05
0.0
1
10
Wavelength (nm)
100
1000
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision November 19, 2013