QUADRANT PHOTODIODE 5 mm2 SXUVPS4 Dimensions are in inch [metric] units. FEATURES • Circular active area (4 quadrants) • TO-5, 5 pin package • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (PER ELEMENT) PARAMETERS TEST CONDITIONS MIN MAX UNITS mm2 1.25 R.049 [1.25 mm] Active Area TYP See attached graph Responsivity, R @ ± 10 mV 100 MOhms Reverse Breakdown Voltage, VR IR = 1 µA 20 Volts Capacitance, C VR = 0 V Shunt Resistance, Rsh 500 RL = 500 Ω, VR = 0 V Response Time, tr 1 Volts µsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE -10° TO 40°C Ambient -20°C TO 80°C Nitrogen or Vacuum 70°C Maximum Junction Temperature Lead soldering temperature 1 260°C 1 0.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision November 19, 2013 QUADRANT PHOTODIODE 5 mm2 Responsivity (A/W) 0.35 SXUVPS4 PHOTON RESPONSIVITY 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 Wavelength (nm) 100 1000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision November 19, 2013