PHOTODIODE 63 mm2 AXUV63HS1-CH FEATURES • • • • • Circular active area Ideal for electron detection 100% internal QE High speed Hole in center of detector Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R TEST CONDITIONS MIN TYP MAX mm2 63 Ø9mm UNITS A/W (see graphs on next page) 160 Reverse Breakdown Voltage, VR IR = 1µA Capacitance, C VR = 0V 10 nF VR = 150V, RL = 50Ω 2 nsec VR = 150V 100 nA Rise Time Dark Current Volts THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient2 Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature1 -10° TO 40°C -20°C TO 80°C 70°C 260°C 1 0.08" from case for 10 seconds. Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised. 2 Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013 PHOTODIODE 63 mm2 RESPONSIVITY (A/W) 0.30 AXUV63HS1-CH ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013