RENESAS HAT1069C

HAT1069C
Silicon P Channel Power MOS FET
Power Switching
REJ03G0164-0300
Rev.3.00
Oct 19, 2007
Features
• Low on-resistance
RDS(on) = 38 mΩ typ (at VGS = –4.5 V)
• High speed switching
• Capable of 1.8 V gate drive
• High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
2 3 4 5
D D D D
Index band
6
5
4
2
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
6
G
3
1
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
PchNote2
Tch
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the grass epoxy board. (FR4 40 × 40 × 1.6 mm)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 1 of 5
Ratings
–12
±8
–4
–16
–4
900
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
HAT1069C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
Min
–12
±8
—
—
–0.3
—
—
—
5
—
—
—
—
—
—
—
—
td(off)
tf
VDF
—
—
—
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 3. Pulse test
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 2 of 5
Typ
—
—
—
—
—
38
48
60
8
1380
235
115
16
3
6.2
35
150
Max
—
—
±10
–1
–1.2
52
70
93
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
490
350
–0.8
—
—
–1.1
ns
ns
V
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±6.4 V, VDS = 0
VDS = –12 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –1.5 A, VGS = –4.5 V
ID = –1.5 A, VGS = –2.5 V
ID = –1.5 A, VGS = –1.8 V
ID = –1.5 A, VDS = –10 V
VDS = –10 V
VGS = 0
f = 1 MHz
VDS = –10 V
VGS = –4.5 V
ID = –3 A
VGS = –4 V, ID = –1.5 A
VDD ≅ –10 V
RL = 6.6 Ω
Rg = 4.7 Ω
IF = –4 A, VGS = 0Note3
HAT1069C
Main Characteristics
Power vs. Temperature Derating
–100
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
1200
e4
ot
150
–0.1
Operation in
this area is
limited by RDS(on)
–0.01
200
m
s
N
100
s
10
n
50
–1
m
tio
ra
0
0
1
=
pe
400
PW
O
800
Ta = 25°C
1 shot Pulse
10 µs
–10
C
Drain Current ID (A)
100 µs
D
Channel Dissipation Pch (mW)
1600
Maximum Safe Operation Area
–1
–0.1
–10
–100
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Note 4: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Output Characteristics
–12
–16
–10 V
–2.2 V
–4.5 V
–3 V
–2.5 V
–2 V
VGS = –1.8 V
–8
–4
VDS = –10 V
Pulse Test
Drain Current ID (A)
Drain Current ID (A)
–16
Typical Transfer Characteristics
Pulse Test
–2
–4
–6
–8
–8
–4
75°C
25°C
Tc = –25°C
0
0
–10
–1
–3
–2
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–250
Ta = 25°C
–200
–150
–4.0 A
–100
–1.5 A
–50
–1.0 A
0
–2
–4
–6
Gate to Source Voltage
–8
–10
VGS (V)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 3 of 5
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
–12
1000
Pulse Test
Ta = 25°C
–2.5 V
100
VGS = –1.8 V
–4.5 V
10
1
–0.1
–1
Drain Current ID (A)
–10
HAT1069C
–4 A
100
–1.8 V
80
–1.5 A
60
–4 A
–1.5 A –1 A
–2.5 V
40
20
–25
10000
Capacitance C (pF)
–1 A
ID = –4 A, –1.5 A, –1 A
VGS = –4.5 V
0
25
50
75
100 125
150
Tc = –25°C
75°C
25°C
1
VDS = –10 V
0.1
–0.1
–0.3
–3
–1
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Ciss
Coss
100
Crss
10
–2
–4
–6
–8
–10
–12
0
ID = –3 A
VDD = –10, –12 V
–7 V
–5 V
–5 V
–8
–4
–7 V
–10 V
VDD = –12 V
–16
0
–8
20
10
Gate Charge Qg (nc)
Switching Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
–16
VGS = –4.5 V, VDD = –10 V
td(off)
tf
tr
100
td(on)
10
–0.1
–1
–10
Drain Current ID (A)
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 4 of 5
–10
0
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Switching Time t (ns)
10
Drain Current ID (A)
1000
1000
Pulse Test
Case Temperature Tc (°C)
VGS = 0
f = 1 MHz
0
100
–100
Pulse Test
–12
–5 V
–8
VGS = 0, 5 V
–4
Ta = 25°C
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage VSD (V)
Gate to Source Voltage VGS (V)
Pulse Test
Forward Transfer Admittance |yfs| (S)
120
Forward Transfer Admittance vs.
Drain Current
Drain to Source Voltage VDS (V)
Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
HAT1069C
Package Dimensions
JEITA Package Code

Package Name
CMFPAK-6
RENESAS Code
PWSF0006JA-A
Previous Code
CMFPAK-6 / CMFPAK-6V
MASS[Typ.]
0.0065g
D
A
e
c
E
A
HE
A
x M
LP
L
b
A
S
e
A2
Reference
Symbol
A
A1
y S
S
e1
b
l1
b2
c
Pattern of terminal position areas
A-A Section
A
A1
A2
b
c
D
E
e
HE
L
LP
x
y
b2
e1
l1
Ordering Information
Part Name
HAT1069C-EL-E
Quantity
3000 pcs
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Page 5 of 5
Shipping Container
Taping
Dimension in Millimeters
Min
0.7
0
0.7
0.15
0.1
1.9
1.6
2.05
0.1
0.15
Nom
0.2
0.15
2.0
1.7
0.65
2.1
0.2
Max
0.8
0.01
0.79
0.3
0.25
2.1
1.8
2.15
0.3
0.45
0.05
0.05
0.35
1.65
0.5
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Colophon .7.0