HAT1069C Silicon P Channel Power MOS FET Power Switching REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Features • Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) 2 3 4 5 D D D D Index band 6 5 4 2 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 6 G 3 1 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR PchNote2 Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the grass epoxy board. (FR4 40 × 40 × 1.6 mm) REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 1 of 5 Ratings –12 ±8 –4 –16 –4 900 150 –55 to +150 Unit V V A A A mW °C °C HAT1069C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr Min –12 ±8 — — –0.3 — — — 5 — — — — — — — — td(off) tf VDF — — — Turn-off delay time Fall time Body–drain diode forward voltage Notes: 3. Pulse test REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 2 of 5 Typ — — — — — 38 48 60 8 1380 235 115 16 3 6.2 35 150 Max — — ±10 –1 –1.2 52 70 93 — — — — — — — — — Unit V V µA µA V mΩ mΩ mΩ S pF pF pF nC nC nC ns ns 490 350 –0.8 — — –1.1 ns ns V Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±6.4 V, VDS = 0 VDS = –12 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –1.5 A, VGS = –4.5 V ID = –1.5 A, VGS = –2.5 V ID = –1.5 A, VGS = –1.8 V ID = –1.5 A, VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz VDS = –10 V VGS = –4.5 V ID = –3 A VGS = –4 V, ID = –1.5 A VDD ≅ –10 V RL = 6.6 Ω Rg = 4.7 Ω IF = –4 A, VGS = 0Note3 HAT1069C Main Characteristics Power vs. Temperature Derating –100 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 1200 e4 ot 150 –0.1 Operation in this area is limited by RDS(on) –0.01 200 m s N 100 s 10 n 50 –1 m tio ra 0 0 1 = pe 400 PW O 800 Ta = 25°C 1 shot Pulse 10 µs –10 C Drain Current ID (A) 100 µs D Channel Dissipation Pch (mW) 1600 Maximum Safe Operation Area –1 –0.1 –10 –100 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) Note 4: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Output Characteristics –12 –16 –10 V –2.2 V –4.5 V –3 V –2.5 V –2 V VGS = –1.8 V –8 –4 VDS = –10 V Pulse Test Drain Current ID (A) Drain Current ID (A) –16 Typical Transfer Characteristics Pulse Test –2 –4 –6 –8 –8 –4 75°C 25°C Tc = –25°C 0 0 –10 –1 –3 –2 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current –250 Ta = 25°C –200 –150 –4.0 A –100 –1.5 A –50 –1.0 A 0 –2 –4 –6 Gate to Source Voltage –8 –10 VGS (V) REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 3 of 5 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 –12 1000 Pulse Test Ta = 25°C –2.5 V 100 VGS = –1.8 V –4.5 V 10 1 –0.1 –1 Drain Current ID (A) –10 HAT1069C –4 A 100 –1.8 V 80 –1.5 A 60 –4 A –1.5 A –1 A –2.5 V 40 20 –25 10000 Capacitance C (pF) –1 A ID = –4 A, –1.5 A, –1 A VGS = –4.5 V 0 25 50 75 100 125 150 Tc = –25°C 75°C 25°C 1 VDS = –10 V 0.1 –0.1 –0.3 –3 –1 Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics Ciss Coss 100 Crss 10 –2 –4 –6 –8 –10 –12 0 ID = –3 A VDD = –10, –12 V –7 V –5 V –5 V –8 –4 –7 V –10 V VDD = –12 V –16 0 –8 20 10 Gate Charge Qg (nc) Switching Characteristics Reverse Drain Current vs. Source to Drain Voltage –16 VGS = –4.5 V, VDD = –10 V td(off) tf tr 100 td(on) 10 –0.1 –1 –10 Drain Current ID (A) REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 4 of 5 –10 0 Drain to Source Voltage VDS (V) Reverse Drain Current IDR (A) Switching Time t (ns) 10 Drain Current ID (A) 1000 1000 Pulse Test Case Temperature Tc (°C) VGS = 0 f = 1 MHz 0 100 –100 Pulse Test –12 –5 V –8 VGS = 0, 5 V –4 Ta = 25°C 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) Gate to Source Voltage VGS (V) Pulse Test Forward Transfer Admittance |yfs| (S) 120 Forward Transfer Admittance vs. Drain Current Drain to Source Voltage VDS (V) Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature HAT1069C Package Dimensions JEITA Package Code Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b A S e A2 Reference Symbol A A1 y S S e1 b l1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b2 e1 l1 Ordering Information Part Name HAT1069C-EL-E Quantity 3000 pcs REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 5 of 5 Shipping Container Taping Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Sales Strategic Planning Div. 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