Si4618DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.017 at VGS = 10 V 0.0195 at VGS = 4.5 V 0.010 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.0 12.5 7.5 15.2 17 14.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook Logic dc-to-dc • Low Current dc-to-dc SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A)a 30 0.43 V at 1.0 A 3.8 D1 SO-8 G1 G1 1 8 D1 S2 2 7 S1/D2 S2 3 6 S1/D2 G2 4 5 S1/D2 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 Top View N-Channel 2 MOSFET Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free) Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ID TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS ISM IAS EAS PD Channel-1 30 ± 16 8.0 6.4 Channel-2 30 ± 16 15.2 12.1 6.7b, c 5.4b, c 35 1.8 11.4b, c 9.1b, c 60 3.8 1.25b, c 35 15 11.2 1.98 1.26 2.4b, c 35 15 11.2 4.16 2.66 1.38b, c 0.88b, c 2.35b, c 1.5b, c TJ, Tstg Unit V A mJ - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Typ. Max. 72 90 RthJA t ≤ 10 s Maximum Junction-to-Ambientb, d RthJF 51 Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2). Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 63 Channel-2 Typ. Max. 43 53 25 30 Unit °C/W www.vishay.com 1 Si4618DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VGS = 0 V, ID = 1 mA Ch-1 30 30 V VGS = 0 V, ID = 1 mA Ch-2 ΔVDS/TJ ID = 250 µA Ch-1 ΔVGS(th)/TJ ID = 250 µA Ch-1 VDS = VGS, ID = 1 mA Ch-1 1 2.5 VDS = VGS, ID = 1 mA Ch-2 1 2.5 VDS = 0 V, VGS = ± 16 V Ch-1 100 VDS = 0 V, VGS = ± 16 V Ch-2 100 VDS = 30 V, VGS = 0 V Ch-1 0.001 VGS(th) IGSS IDSS ID(on) RDS(on) gfs VDS = 30 V, VGS = 0 V Ch-2 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-1 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-2 35 -6 0.05 0.5 0.025 3 µA mA 15 VDS = 5 V, VGS = 10 V Ch-1 20 VDS = 5 V, VGS = 10 V Ch-2 20 VGS = 10 V, ID = 8 A Ch-1 0.014 VGS = 10 V, ID = 8 A Ch-2 0.0083 0.010 VGS = 4.5 V, ID = 5 A Ch-1 0.016 0.0195 VGS = 4.5 V, ID = 5 A Ch-2 0.0095 0.0115 VDS = 15 V, ID = 8 A Ch-1 40 VDS = 15 V, ID = 8 A Ch-2 47 Ch-1 1535 Ch-2 2290 Ch-1 205 Ch-2 360 A 0.017 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance www.vishay.com 2 Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 91 Ch-2 117 VDS = 15 V, VGS = 10 V, ID = 8 A Ch-1 29 44 VDS = 15 V, VGS = 10 V, ID = 8 A Ch-2 39 59 Ch-1 12.5 19 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-2 17 26 Ch-1 4.1 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-2 5.6 Ch-1 3.4 Qgs Qgd Rg pF f = 1 MHz Ch-2 4 Ch-1 1.8 3.0 Ch-2 1.9 3.0 nC Ω Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 Si4618DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typ.a Max. Ch-1 8 15 Ch-2 9 16 Ch-1 22 33 Ch-2 24 36 Ch-1 20 30 Ch-2 26 39 Ch-1 8 15 Test Conditions Min. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 8 15 Ch-1 24 36 Ch-2 24 36 Ch-1 87 130 Ch-2 97 145 Ch-1 30 45 Ch-2 35 53 Ch-1 34 51 Ch-2 45 68 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD Ch-1 1.8 Ch-2 3.8 Ch-1 35 Ch-2 35 IS = 2 A Ch-1 0.77 1.1 IS = 1 A Ch-2 0.37 0.43 Ch-1 22 33 Ch-2 26 39 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 15 23 Ch-2 15 23 Reverse Recovery Fall Time ta Channel-2 IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 13 Ch-2 13 Ch-1 9 Ch-2 13 Reverse Recovery Rise Time tb A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 3 Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 2.0 VGS = 10 V thru 4 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 3V 10 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C 0.6 1.2 1.8 2.4 3.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.025 2000 0.022 1600 5 Ciss 0.019 VGS = 4.5 V VGS = 10 V 0.016 1200 800 0.013 400 0.010 0 0 10 20 30 40 50 Coss Crss 0 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 8 A ID = 8 A VGS = 10 V 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) TC = - 55 °C 0.0 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 VDS = 10 V VDS = 20 V 6 VDS = 30 V 4 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 24 30 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 100 ID = 8 A I S - Source Current (A) R DS(on) - On-Resistance (Ω) 150 °C 10 1 25 °C 0.1 0.01 0.08 0.06 0.04 125 °C 0.02 25 °C 0.00 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 100 0.2 80 - 0.1 Power (W) VGS(th) Variance (V) 0.00 ID = 5 mA - 0.4 10 60 40 ID = 250 µA - 0.7 - 1.0 - 50 20 0 - 25 0 25 50 75 100 125 150 0.001 TJ - Temperature (°C) 0.01 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 1s 10 s DC 1 100 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 5 Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 I D - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2.5 1.20 2.0 0.96 Power Dissipation (W) Power Dissipation (W) Current Derating* 1.5 1.0 0.5 0.72 0.48 0.24 0.00 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 7 Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 5 VGS = 10 V thru 5 V 4 I D - Drain Current (A) I D - Drain Current (A) 40 30 3V 20 10 3 2 TC = 125 °C 1 TC = 25 °C TC = - 55 °C 0 0.0 0 0.6 1.2 1.8 2.4 3.0 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.012 2800 0.011 2240 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.010 0.009 VGS = 10 V 0.008 1680 1120 Coss 560 Crss 0.007 0 0 10 20 30 40 50 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.8 ID = 8 A VGS = 10 V ID = 8 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 VDS = 10 V VDS = 30 V 6 VDS = 20 V 4 1.5 VGS = 4.5 V 1.2 0.9 2 0 0 www.vishay.com 8 9 18 27 36 45 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 100 ID = 8 A 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 1 25 °C 0.1 0.01 0.04 0.03 0.02 125 °C 0.01 25 °C 0.00 0.001 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 200 10-1 10-2 160 30 V 10-3 Power (W) I S - Source Current (A) 1 10 V 10-4 10-5 120 80 40 20 V 10-6 0 25 50 75 100 125 0 0.001 150 0.01 VSD - Source-to-Drain Voltage (V) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Reverse Current (Schottky) 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse 0.01 0.1 1 * VGS DC 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 9 Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 17 I D - Drain Current (A) 14 10 7 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 5 1.5 4 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 3 2 0.9 0.6 0.3 1 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 125 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74450. Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.288 7.3 0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07 Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading Document Number: 70740 Revision: 18-Jun-07 0.050 1.27 0.088 2.25 0.088 2.25 0.027 0.69 0.078 1.98 0.2 5.07 Figure 2. Dual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. www.vishay.com 1 APPLICATION NOTE In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. 0.288 7.3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1