NJW4820 Single Low Side Switch GENERAL DESCRIPTION PACKAGE OUTLINE The NJW4820 is the single low-side switch that can supply 0.5A. The active clamp, overcurrent and thermal shutdown are built in with Nch MOS FET. It can be controlled by a logic signal (3V/5V) directly. Therefore, it is suitable for a various power drive application of the motor, the solenoid and the lamp etc. NJW4820F FEATURES Drain-Source Voltage 43V Drain Current 0.5A Corresponding with Logic Voltage Operation: 3V/5V Low On-Resistance 0.27Ω typ. (VIN=5V) 0.30Ω typ. (VIN=3.3V) Low Consumption Current 80µA typ. (VIN=5V) 65µA typ. (VIN=3.3V) Active Clamp Circuit Over Current Protection (Self recovery type current limiting function) Thermal Shutdown Package Outline SOT23-5 PIN CONFIGURATION 5 4 1. N.C. 2. SOURCE 3. IN 4. N.C. 5. DRAIN 1 2 3 BLOCK DIAGRAM DRAIN Active Clamp IN Thermal Shut Down Over Current Protection SOURCE Ver.2014-01-08 -1- NJW4820 ABSOLUTE MAXIMUM RATINGS PARAMETER SYNBOL Drain-Source Voltage VDS Input Voltage VIN Power Dissipation PD RATINGS +43 −0.3 to +6 480 (*1) 640 (*2) (Ta=25°C) REMARK DRAIN–SOURCE Pin IN–SOURCE Pin UNIT V V mW – Active Clamp Tolerance 10 mJ – EAS (Single Pulse) Active Clamp Current IAP 1 A – Junction Temperature Tj – −40 to +150 °C Operating Temperature Topr – −40 to +85 °C Storage Temperature Tstg – −50 to +150 °C (*1): Mounted on glass epoxy board. (76.2×114.3×1.6mm:based on EIA/JDEC standard, 2Layers) (*2): Mounted on glass epoxy board. (76.2×114.3×1.6mm:based on EIA/JDEC standard, 4Layers), internal Cu area: 74.2×74.2mm RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN. TYP. Drain-Source Voltage VDS – – Drain Current ID 0 – Input Pin Voltage VIN 0 – -2- MAX. 40 0.5 5.5 UNIT V A V (Ta=25°C) REMARK DRAIN–SOURCE Pin DRAIN–SOURCE Pin IN–SOURCE Pin Ver.2014-01-08 NJW4820 ELECTRICAL CHARACTERISTICS PARAMETER Drain-Source Clamp Voltage Input Threshold Voltage Protection Circuit Function Input Voltage Range Zero-gate-voltage drain Current Input Current 1 (at Normal Operation) Input Current 2 (at Normal Operation) Input Current 3 (at OCP Operation) Input Current 4 (at OCP Operation) On-state Resistance 1 On-state Resistance 2 Drain-Source Voltage At Short Circuit Protection Over Current Protection 1 Over Current Protection 2 (Unless otherwise noted, VDS=13V, Ta=25°C) SYMBOL VDSS_CL Vth VIN=0V, ID=1mA VDS=13V, ID=10mA VIN_opr MIN. TYP. MAX. UNIT 43 0.65 – 0.9 – 1.15 V V 2.64 – 5.5 V IDSS VIN=0V, VDS=40V – – 1 µA IIN1 VIN=5V – 80 110 µA IIN2 VIN=3.3V – 65 90 µA IIN3 VIN=5V, VDD=13V – 160 200 µA IIN4 VIN=3.3V, VDD=13V – 105 130 µA RDS_ON1 RDS_ON2 VIN=5V, ID=0.5A VIN=3.3V, ID=0.5A – – 0.27 0.3 0.6 0.65 Ω Ω VDS(SC) VIN=5V 28 – – V ILIMIT1 ILIMIT2 VIN=5V, VDD=13V VIN=3.3V, VDD=13V VIN=0 to 5V, VDD=13V, ID=0.5A VIN=0 to 3.3V, VDD=13V, ID=0.5A VIN=5 to 0V, VDD=13V, ID=0.5A VIN=3.3 to 0V, VDD=13V, ID=0.5A VIN=0V, IDR=1A 1 0.75 1.6 1.3 2.3 2 A A – 5 – µs – 8.5 – µs – 42 – µs – 35 – µs – 0.95 1.25 V Turn-on Time 1 tON1 Turn-on Time 2 tON2 Turn-off Time 1 tOFF1 Turn-off Time 2 tOFF2 Source–Drain Voltage Difference VPDSD Ver.2014-01-08 CONDITIONS -3- NJW4820 TIMING CHART ON, OFF Switching Time (VIN=0 to 5V, VDS=13V, ID=0.5A) 90% VIN 10% 90% DRAIN 10% tON tOFF High Input signal Low ON Over Current Protection OFF ON Thermal Protection OFF Drain-source voltage VDD VDSS_CL 0V Inductive load ILIMIT Drain current 0A Normal -4- Current limit Thermal shutdown Active clamp Ver.2014-01-08 NJW4820 TYPICAL APPLICATION VDD RL Logic Voltage ex. 5V, 3V NJW4820 DRAIN Micro Controller IN Drive Signal SOURCE Ver.2014-01-08 -5- NJW4820 CHARACTERISTICS Drain-Source Clamp Voltage vs. Ambient Temperature 60 Input Threshold Voltage vs. Ambient Temperature 2 50 Input Threshold Voltage [V] Drain-Source Clamp Voltage [V] 55 45 40 35 30 25 20 15 10 1.5 1 0.5 5 0 0 -50 -25 0 25 50 75 100 125 150 Ambient Temperature [ºC] -50 Input Current vs. Ambient Temperature (at OCP operating) 300 350 250 300 Input Current [µA] Input Current [µA] 0 25 50 75 100 125 150 Ambient Temperature [ºC] Input Current vs. Ambient Temperature (at Normal Operation) 400 -25 250 200 150 200 150 100 100 50 50 0 0 -50 -25 0 25 50 75 100 125 150 Ambient Temperature [ºC] -50 ON-state Resistance vs. Input Voltage 0.4 0.6 ON-state Resistance [Ω] ON-state Resistance [Ω] 0 25 50 75 100 125 150 Ambient Temperature [ºC] ON-state Resistance vs. Ambient Temperature 0.7 0.35 0.3 0.25 0.2 0.15 0.1 0.5 0.4 0.3 0.2 0.1 0.05 0 0 0 -6- -25 2 4 Input Voltage [V] 6 -50 -25 0 25 50 75 100 125 150 Ambient Temperature [ºC] Ver.2014-01-08 NJW4820 CHARACTERISTICS Over Current Protection vs. Input Voltage Over Current Protection [A] Over Current Protection [A] Over Current Protection vs. Ambient Temperature 3.0 (Ta=25ºC) 2.00 1.50 1.00 0.50 0.00 2.5 2.0 1.5 1.0 0.5 0.0 0.0 1.0 2.0 3.0 4.0 Input Voltage [V] 5.0 6.0 -50 0 25 50 75 100 125 150 Ambient Temperature [ºC] Turn-on Time vs.Ambient Temperature 60 Drain Current vs. Drain-Source Voltage 2 50 1.8 Turn-on Time [µs] 1.6 Drain Current: ID [A] -25 1.4 1.2 1 0.8 40 30 20 0.6 10 0.4 0.2 0 0 0 10 20 30 Drain-Source Voltage: VDS [V] 40 -25 0 25 50 75 100 125 150 Ambient Temperature [ºC] Turn-off Time vs.Ambient Temperature 60 TSD Detection/release Temperature vs. Input Voltage 170 TSD Detection/release Temperature [ºC] 50 Turn-off Time [µs] -50 40 30 20 10 0 Detection temp 160 150 140 Release temp 130 120 -50 Ver.2014-01-08 -25 0 25 50 75 100 125 150 Ambient Temperature [ºC] 2 3 4 Input Voltage [V] 5 6 -7- Application Tips NJW4820 Technical Information Regarding Active Clamp Capacity of High/Low side Switch Products What is “Active Clamp Capacity”. The IC might suffer to damage by the inductive kickback at the transient time of ON state to OFF state, when an inductive load such as a solenoid or motor is used for the load of the high-side/low-side switch. The protection circuit for the inductive kickback is the active clamp circuit. The energy that can be tolerated by the active clamp circuit is called "Active Clamp Capacity (EAS)". When using an inductive load to the high-side/low-side switch, you should design so that the ESW does not exceed the active clamp capability. IC operation without an external protection parts (Fig 1) Active Clamp Current IAP tA ID Active Clamp Period VDS Active Clamp Current IAP ID VDD 0V Time Drain-Source Clamp Voltage V DSS_CL Drain-Source Clamp Voltage V DSS_CL VDS VDD 0V VIN Time 5V VIN 0V tA Active Clamp Period 5V 0V tON tON Fig1. Active Clamp Waveform (Left: Low-side Switch / Light High-side Switch) At when the VIN turns off, the drain-source voltage (VDS) increases rapidly by the behavior of the inductive load that is keeping current flowing. However, it will be clamped at VDSS_CL by the active clamp circuit. At the same time, the drain current is flowed by adjusting the gate voltage of the output transistor, and the energy is dissipated at the output transistor. The energy: ESW is shown by the following formula. tA E SW = ∫ VDS (t ) ⋅ I D (t )dt = 0 VDSS _ CL 1 2 LI AP ⋅ 2 VDSS _ CL − VDD The ESW is consumed inside IC as heat energy. However, the thermal shutdown does not work when the VIN is 0V. Therefore in worst case the IC might break down. When using the active clamp, you should design ESW does not exceed the EAS. -8- Ver.2014-01-08 Application Tips NJW4820 Technical Information Application Hint The simplest protection example is to add an external flywheel diode at the load to protect IC from an inductive kickback. (Fig.2) Flywheeling Diode ID VDD VDD VIN DRAIN SOURCE VDD OUT VIN V DS V DS ID GND Flywheeling Diode Fig 2. Application Circuit of Inductance Load Driving (Left: Low-side Switch / Light High-side Switch) [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. Ver.2014-01-08 -9-