Data Sheet No. PD60298_B IPS1051LPbF / IPS1052GPbF SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features • • • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Rds(on) 250mΩ (max.) Vclamp 39V Ishutdown 2.8A (typ.) Packages Description The IPS1051LPbF and IPS1052GPbF are Intelligent Power Switches (IPS) featuring low side MOSFETs with over-current, over-temperature, ESD protection and drain to source active clamp. The IPS1052G is a dual channel device while the IPS1051 is a single channel. These devices offer protections and the high reliability required in harsh environments. Each switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 3A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. SOT-223 IPS1051LPbF SO-8 IPS1052GPbF Typical Connection +Bat Load D 2-4 (IPS1052G) 1 (IPS1051L) IN 5-6-7-8 (IPS1052G) 2 (IPS1051L) Control Input R Input Signal V Diag www.irf.com S 1-3 (IPS1052G) 3 (IPS1051L) 1 IPS1051LPbF / IPS1052GPbF Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified). Symbol Parameter Min. Max. Units Vds Vds cont. Vin Isd cont. Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max diode continuous current (limited by thermal dissipation) Maximum power dissipation (internally limited by thermal protection) Rth=60°C/W IPS1051L 1” sqrt. footprint Rth=100°C/W IPS1052G std. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω Between drain and source Other combinations Max. storage & operating temperature junction temperature -0.3 -0.3 36 28 6 1.3 V V V A 2 1.25 W Pd ESD Tj max. ⎯ ⎯ ⎯ 4 3 ⎯ ⎯ -40 0.5 0.3 150 °C Typ. Max. Units 100 60 ⎯ ⎯ 100 ⎯ 130 ⎯ kV Thermal Characteristics Symbol Parameter Rth1 Rth2 Thermal resistance junction to ambient IPS1051L SOT-223 std. footprint Thermal resistance junction to ambient IPS1051L SOT-223 1” sqrt. footprint Thermal resistance junction to ambient IPS1052G SO-8 std. Footprint 1 die active Thermal resistance junction to ambient IPS1052G SO-8 std. footprint 2 die active Rth1 Rth1 °C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol VIH VIL Parameter High level input voltage Low level input voltage Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V Rth=60°C/W IPS1051L 1” sqrt. Footprint Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V Ids Rth=100°C/W IPS1052G 1” sqrt. Footprint - 1 die active Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V Rth=130°C/W IPS1052G 1” sqrt. Footprint - 2 die active Rin Recommended resistor in series with IN pin to generate a diagnostic Max L Max. recommended load inductance ( including line inductance )(1) Max. F Max. frequency Max. t rise Max. input rise time (1) Higher inductance is possible if maximum load current is limited - see figure 11 www.irf.com Min. Max. Units 4.5 0 5.5 0.5 V ⎯ 1.4 A ⎯ 1.1 A 0.5 A 10 30 10 1 kΩ µH kHz µs 0.5 ⎯ ⎯ ⎯ 2 IPS1051LPbF / IPS1052GPbF Static Electrical Characteristics Tj=25°C, Vcc=14V (unless otherwise specified) Symbol Parameter Rds(on) ON state resistance Tj=25°C ON state resistance Tj=150°C Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source pin clamp voltage Input threshold voltage Idss1 Idss2 V clamp1 V clamp2 Vin clamp Vth Min. Typ. Max. ⎯ ⎯ ⎯ ⎯ 250 450 5 10 ⎯ 160 340 0.1 0.2 38 39 6.5 1.7 Min. Typ. Max. Units 1 1 3 2 3 3 15 4 0.1 10 10 40 10 µs ⎯ mJ Typ. Max. 36 ⎯ 5.5 Units mΩ µA ⎯ 42 7.5 V ⎯ Test Conditions Vin=5V, Ids=1A Vcc=14V, Tj=25°C Vcc=28V, Tj=25°C Id=20mA Id=0.5A Iin=1mA Id=10mA Switching Electrical Characteristics Vcc=14V, Resistive load=10Ω, Rinput=50Ω, Vin=5V, Tj=25°C Symbol Parameter Tdon Tr Tdoff Tf Eon + Eoff Turn-on delay time to 20% Rise time 20% to 80% Turn-off delay time to 80% Fall time 80% to 20% Turn on and off energy ⎯ Test Conditions See figure 2 Protection Characteristics Symbol Parameter Tsd Isd OV Over temperature threshold Over current threshold Over voltage protection (not active when the device is ON ) Vreset IN protection reset threshold Treset Time to reset protection (2)Guaranteed by design Min. ⎯ Units °C A V 150(2) 1.9 34 165 2.8 37 ⎯ 15(2) 1.7 50 200 V µs Min. Typ. Max. Units 15 150 32 230 70 350 3.8 ⎯ ⎯ Test Conditions See figure 1 See figure 1 Vin=0V, Tj=25°C Diagnostic Symbol Parameter Iin, on Iin, off ON state IN positive current OFF state IN positive current (after protection latched – fault condition) www.irf.com Test Conditions Vin=5V µA 3 IPS1051LPbF / IPS1052GPbF Lead Assignments 2 8765 1- S1 2- In1 3- S2 4- In2 5-6 D2 7-8 D1 1- In 2- D 3- S 1 2 3 1234 SOT-223 SO8 Functional Block Diagram All values are typical DRAIN 37V IN 75Ω 43V 15kΩ Q Tj > 165°C 2kΩ 6V 150kΩ Vds > O.V. S R I > Isd SOURCE www.irf.com 4 IPS1051LPbF / IPS1052GPbF All curves are typical values. Operating in the shaded area is not recommended. Vin Ids t<T reset 80% t>T reset Ishutdown Vin Isd 20% Tr-in 80% Ids Tj Tsd 165°C 20% Tshutdown Td on Td off Tf Tr Vdiag Vds normal fault Figure 1 – Timing diagram Figure 2 – IN rise time & switching definitions T clamp Vin L Rem : During active clamp, Vload is negative V load R Ids D Vds clamp IN 5V Vds + 14V - Vin 0V Vcc Vds S Ids See Application Notes to evaluate power dissipation Figure 3 – Active clamp waveforms www.irf.com Figure 4 – Active clamp test circuit 5 IPS1051LPbF / IPS1052GPbF 200% 150% 100% 50% 0% 0 1 2 3 4 5 6 Rds(on), Drain-to-Source On Resistance (Normalized) Rds(on), Drain-to-Source On Resistance (normalized) 200% 150% 100% 50% -50 0 50 100 150 Tj, junction temperature (°C) Vin, input voltage (V) Figure 5 – Normalized Rds(on) (%) Vs Input voltage (V) Figure 6 - Normalized Rds(on) (%) Vs Tj (°C) 4 140% Isd, normalized I shutdown (%) 120% Ids, output current 3 2 1 I limit I shutdown 0 100% 80% 60% 40% 20% 0% 0 1 2 3 4 5 6 Vin, input voltage (V) Figure 7 – Current limitation and current shutdown Vs Input voltage (V) www.irf.com -50 0 50 100 150 Tj, junction temperature (°C) Figure 8 – Normalized I shutdown (%) Vs junction temperature (°C) 6 IPS1051LPbF / IPS1052GPbF 3 3 60°C/W 2.5 100°C/W Ids, output current (A) Ids, cont. Output current (A) 2.5 2 1.5 1 0.5 0 2 1.5 1 0.5 0 -50 0 50 100 150 1 Tamb, Ambient temperature (°C) 10 100 1000 Protection response time (s) Figure 9 – Max. continuous output current (A) Vs Ambient temperature (°C) Figure 10 – Ids (A) Vs over temperature protection response time (s) / IPS1051L 10 1 0.001 0.01 0.1 Inductive load (mH) Figure 11 – Max. ouput current (A) Vs Inductive load (mH) www.irf.com 1 Zth, transient thermal impedance (°C/W) Ids, output current (A) 100 10 1 0.1 0.01 1E-6 1E-4 1E-2 1E+0 1E+2 Time (s) Figure 12 – Transient thermal impedance (°C/W) Vs time (s) 7 IPS1051LPbF / IPS1052GPbF 200 Tsd, over temperature shutdown (°C) 250 Ion, Ioff, input durrent (µA) 200 Icc off 150 Icc on 100 50 0 -50 0 50 100 Tj, junction temperature (°C) Figure 13 – Input current (µA) On and Off Vs junction temperature (°C) www.irf.com 150 180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 Vin, input voltage (V) Figure 14 – Over temperature shutdown (°C) Vs input voltage (V) 8 6 IPS1051LPbF / IPS1052GPbF Case Outline - SOT-223 - Automotive Q100 PbF MSL2 qualified Leads and drain are plated with 100% Sn www.irf.com 9 IPS1051LPbF / IPS1052GPbF Tape & Reel - SOT-223 www.irf.com 10 IPS1051LPbF / IPS1052GPbF Case Outline - SO-8 - Automotive Q100 PbF MSL2 qualified Leads and drain are plated with 100% Sn www.irf.com 11 IPS1051LPbF / IPS1052GPbF Tape & Reel - SO-8 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. SOT223 and SO8 are MSL2 qualified. This product is designed and qualified for the Automotive [Q100] market. 12/06/2006 www.irf.com 12